IXFK120N65X2 IXFX120N65X2 V

Advance Technical Information
IXFK120N65X2
IXFX120N65X2
X2-Class HiPerFETTM
Power MOSFET
VDSS
ID25
=
=
650V
120A

24m
RDS(on) 
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264P (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
650
650
V
V
VGSS
VGSM
Continuous
Transient
 30
 40
V
V
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
120
240
A
A
IA
EAS
TC = 25C
TC = 25C
20
1.5
A
J
PD
TC = 25C
1250
W
dv/dt
IS  IDM, VDD  VDSS, TJ  150°C
50
V/ns
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
1.13/10
Nm/lb.in

20..120 /4.5..27
N/lb

10
6
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Md
Mounting Torque (TO-264)
FC
Mounting Force
Weight
TO-264P
PLUS247
(PLUS247)
G
D
Tab
S
PLUS247 (IXFX)
G
D
Tab
S
G = Gate
S = Source
D = Drain
Tab = Drain
Features


International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages


Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
650
VGS(th)
VDS = VGS, ID = 8mA
2.7
IGSS
VGS =  30V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1

V
5.5
V
100
nA
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

TJ = 125C
© 2015 IXYS CORPORATION, All Rights Reserved
50 A
5 mA
24 m
DS100685(8/15)
IXFK120N65X2
IXFX120N65X2
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
46
RGi
Gate Input Resistance
Ciss
Coss
tr
td(off)
tf
S
0.7

nF
9.0
nF
4.2
pF
64
ns
23
ns
86
ns
12
ns
225
nC
118
nC
66
nC
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
Qg(on)
Qgs
76
15.5
Crss
td(on)
TO-264P Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.10C/W
RthCS
0.15C/W
E1
A
E
Q
R
Q1
D1
D
R1
4
1
2
3
L1
D2
c
b1
x2 e
b2
b
A
Terminals:
1 = Gate
2,4 = Drain
3 = Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
120
A
ISM
Repetitive, Pulse Width Limited by TJM
480
A
VSD
IF = IS , VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
240
IF = 60A, -di/dt = 100A/s
2.8
VR = 100V, VGS = 0V
PLUS247TM Outline
ns

μC
23.4
A
Terminals:
Note 1. Pulse test, t  300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2