IXYS IXFP8N50PM

Preliminary Technical Information
PolarHVTMHiPerFET
Power MOSFET
IXFP 8N50PM
VDSS
ID25
RDS(on)
(Electrically Isolated Tab)
trr
= 500 V
= 4.4 A
≤ 0.8
Ω
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
4.4
14
A
A
IAR
EAR
EAS
TC = 25° C
TC = 25° C
TC = 25° C
8
20
300
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 18 Ω
10
V/ns
PD
TC = 25° C
42
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
4
g
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 1 mA
3.0
5.5
VGS = ±30 VDC, VDS = 0
l
l
l
l
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 4 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast Intrinsic Diode
V
Advantages
V
l
±100
nA
5
500
µA
µA
0.8
Ω
D = Drain
Features
l
IGSS
S
G = Gate
S = Source
l
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
Isolated Tab
D
l
Easy to mount
Space savings
High power density
DS99484E(04/06)
IXFP 8N50PM
Symbol
Test Conditions
gfs
VDS= 10 V; ID = 4 A
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
5
Ciss
Coss
8
S
1050
pF
120
pF
12
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
22
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 8 A
28
ns
td(off)
RG = 18 Ω (External)
65
ns
tf
23
ns
Qg(on)
20
nC
7
nC
7
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 4 A
Qgd
3.0 ° C/W
RthJS
Source-Drain Diode
ISOLATED TO-220 (IXTP...M)
1 2
3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
8
A
ISM
Repetitive
14
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IRM
IF = 8 A, VGS=0V, VR=100V
-di/dt = 100 A/µs
0.25
2
200 ns
µC
A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2