Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS(on) (Electrically Isolated Tab) trr = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 4.4 14 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 8 20 300 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω 10 V/ns PD TC = 25° C 42 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 g OVERMOLDED TO-220 (IXTP...M) OUTLINE G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 1 mA 3.0 5.5 VGS = ±30 VDC, VDS = 0 l l l l IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 4 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast Intrinsic Diode V Advantages V l ±100 nA 5 500 µA µA 0.8 Ω D = Drain Features l IGSS S G = Gate S = Source l Symbol Test Conditions (TJ = 25° C unless otherwise specified) Isolated Tab D l Easy to mount Space savings High power density DS99484E(04/06) IXFP 8N50PM Symbol Test Conditions gfs VDS= 10 V; ID = 4 A Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. 5 Ciss Coss 8 S 1050 pF 120 pF 12 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 22 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 8 A 28 ns td(off) RG = 18 Ω (External) 65 ns tf 23 ns Qg(on) 20 nC 7 nC 7 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 4 A Qgd 3.0 ° C/W RthJS Source-Drain Diode ISOLATED TO-220 (IXTP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 8 A ISM Repetitive 14 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 8 A, VGS=0V, VR=100V -di/dt = 100 A/µs 0.25 2 200 ns µC A PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2