IXBL20N300C - IXYS Corporation

Advance Technical Information
High Voltage,
High Frequency,
BiMOSFETTM Monolithic
Bipolar MOS Transistor
IXBL20N300C
VCES = 3000V
IC110 = 20A
VCE(sat)  6.0V
(Electrically Isolated Tab)
ISOPLUS i5-PakTM
Symbol
Test Conditions
Maximum Ratings
VCES
TJ
= 25°C to 150°C
3000
V
VCGR
TJ
= 25°C to 150°C, RGE = 1M
3000
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
TC = 25°C
50
A
IC110
TC = 110°C
20
A
ICM
TC = 25°C, 1ms
430
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 3
Clamped Inductive Load
ICM = 160
VCES  1500
A
V
TSC
(SCSOA)
VGE = 15V, TJ = 125°C,
RG = 52, VCE = 1500V, Non-Repetitive
10
μs
PC
TC
417
W
-55 ... +150
°C

TJM
150
°C

Tstg
-55 ... +150
°C

300
260
°C
°C
30..170 / 7..36
N/lb
4000
V~
8
g
= 25°C
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
FC
Mounting Force with Clip
VISOL
50/60Hz, 5 Seconds
Weight
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IC
= 250μA, VGE = 0V
3000
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC
V
5.0
4.5
TJ = 125°C
© 2013 IXYS CORPORATION, All Rights Reserved
C
G = Gate
E = Emitter
Isolated Tab
C = Collector
Features


Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
High Frequency Operation
Advantages


Low Gate Drive Requirement
High Power Density

Switch-Mode and Resonant-Mode
Power Supplies
V
25 μA
6.5 mA
Note 2, TJ = 125°C
= 20A, VGE = 15V, Note 1
E
Applications
Characteristic Values
Min.
Typ.
Max.
BVCES
G
5.1
±200
nA
6.0
V
V
DS100553(8/13)
IXBL20N300C
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
25
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 1000V
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
VCE = 1500V, RG = 3
Note 3
Inductive load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 1500V, RG = 3
Note 3
RthJC
RthCS
E
43
S
10
440
160
nF
pF
pF
425
53
160
nC
nC
nC
33
12
23.0
370
110
2.6
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
ISOPLUS i5-PakTM HV (IXBL) Outline
ns
ns
mJ
ns
ns
mJ
33
14
23.0
435
175
3.7
ns
ns
mJ
ns
ns
mJ
0.15
0.30 °C/W
°C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
VF
IF = 20A, VGE = 0V, Note 1
trr
IF = 20A, VGE = 0V, -diF/dt = 100A/μs
IRM
QRM
Notes:
5.0
VR = 100V, VGE = 0V
S
4
1 2
+
3
c
e1
e1
b3
b2
PIN 1
PIN 2
PIN 3
PIN 4
SYM
INCHES
MIN
MAX
b1
e
= Gate
= Emitter
= Collector
= Isolated
MILLIMETER
MIN
MAX
A
0.190
0.205
4.83
5.21
A1
0.102
0.118
2.59
3.00
A2
0.046
0.055
1.17
1.40
b
0.045
0.055
1.14
1.40
b1
0.063
0.072
1.60
1.83
b2
0.058
0.068
1.47
1.73
c
0.020
0.029
0.51
0.74
D
1.020
1.040
25.91
26.42
E
0.770
0.799
19.56
20.29
e
0.150 BSC
e1
L
0.450 BSC
0.780
0.820
3.81 BSC
L1
0.080
0.102
2.03
2.59
Q
0.210
0.235
5.33
5.97
11.43 BSC
19.81
20.83
Q1
0.490
0.513
12.45
13.03
R
0.150
0.180
3.81
4.57
R1
0.100
0.130
2.54
3.30
S
0.668
0.690
16.97
17.53
T
0.801
0.821
20.34
20.85
U
0.065
0.080
1.65
2.03
V
864
ns
31
A
13.5
μC
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
3. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBL20N300C
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
40
240
VGE = 15V
10V
8V
35
200
7V
25
20
I C - Amperes
I C - Amperes
30
VGE = 15V
12V
10V
6V
15
9V
160
8V
120
7V
80
10
40
5
6V
5V
0
0
0
1
2
3
4
5
6
0
5
10
15
40
1.5
VGE = 15V
10V
8V
7V
30
VGE = 15V
1.4
30
I C = 40A
1.3
VCE(sat) - Normalized
I C - Amperes
25
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
35
20
VCE - Volts
VCE - Volts
6V
25
20
15
10
1.2
I C = 20A
1.1
1.0
0.9
5V
5
I C = 10A
0.8
0
0.7
0
1
2
3
4
5
6
7
8
-50
-25
0
25
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
10
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
90
80
TJ = 25ºC
9
70
I C - Amperes
VCE - Volts
8
7
6
I C = 40A
60
50
TJ = 125ºC
25ºC
- 40ºC
40
30
5
20A
20
4
10
10A
0
3
5
6
7
8
9
10
11
12
13
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
14
15
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
IXBL20N300C
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
100
TJ = - 40ºC
90
VCE = 1000V
14
I C = 20A
80
I G = 10mA
12
25ºC
60
VGE - Volts
g f s - Siemens
70
125ºC
50
40
10
8
6
30
4
20
2
10
0
0
0
10
20
30
40
50
60
70
80
90
0
50
100
I C - Amperes
200
250
300
350
400
450
35
40
QG - NanoCoulombs
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Capacitance
100,000
100
90
TJ = 25ºC
f = 1 MHz
J
---Capacitance - PicoFarads
125ºC
80
70
I F - Amperes
150
60
VGE = 0V
50
VGE = 15V
40
30
Cies
10,000
Coes
1,000
20
Cres
10
0
100
0
1
2
3
4
5
6
7
8
9
10
11
12
0
5
10
15
20
25
30
VCE - Volts
VF - Volts
Fig. 11. Reverse-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
1
180
160
140
0.1
Z (th)JC - ºC / W
I C - Amperes
120
100
80
60
40
TJ = 125ºC
20
RG = 3Ω
dv / dt < 10V / ns
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXBL20N300C
Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC
Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC
1000
1000
VCE(sat) Limit
VCE(sat) Limit
100
100
I C - Amperes
I C - Amperes
25µs
10
100µs
1ms
1
25µs
10
100µs
1ms
1
10ms
10ms
TJ = 150ºC
0.1
100ms
TC = 25ºC
TJ = 150ºC
0.1
100ms
TC = 75ºC
DC
Single Pulse
Single Pulse
0.01
DC
0.01
1
10
100
1,000
10,000
1
10
100
VCE - Volts
Fig. 15. Inductive Switching Energy Loss vs.
Gate Resistance
11
Eoff
10
TJ = 125ºC , VGE = 15V
---
9
55
8
35
6
30
5
25
4
20
2
1
10
15
20
25
30
35
---
40
VCE = 1500V
6
35
TJ = 125ºC
5
25
3
15
10
1
10
5
0
40
5
10
---
15
20
44
220
40
36
6
32
I C = 40A
5
28
4
24
3
2
1
55
40
tfi
2400
t d(off) - - - -
2100
65
75
85
95
105
TJ - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
115
VCE = 1500V
1800
180
1500
I C = 40A
160
1200
I C = 20A
140
900
120
600
16
100
300
12
125
80
20
I C = 20A
45
35
Fig. 18. Inductive Turn-off Switching Times vs.
Gate Resistance
200
Eon - MilliJoules
7
35
30
0
0
5
10
15
20
RG - Ohms
25
30
35
40
t d(off) - Nanoseconds
VCE = 1500V
25
25
TJ = 125ºC, VGE = 15V
RG = 3Ω , VGE = 15V
8
Eoff - MilliJoules
Eon -
48
240
t f i - Nanoseconds
Eoff
20
TJ = 25ºC
I C - Amperes
Fig. 17. Inductive Switching Energy Loss vs.
Junction Temperature
9
30
4
RG - Ohms
10
45
2
15
I C = 20A
Eon -
50
Eon - MilliJoules
40
7
5
Eoff
7
E on - MilliJoules
I C = 40A
8
0
Fig. 16. Inductive Switching Energy Loss vs.
Collector Current
45
3
10,000
TJ = 125ºC , VGE = 15V
50
VCE = 1500V
9
E off - MilliJoules
Eon -
60
Eoff - MilliJoules
12
1,000
VCE - Volts
IXBL20N300C
Fig. 19. Inductive Turn-off Switching Times vs.
Collector Current
tfi
280
550
220
120
350
TJ = 25ºC
300
40
0
15
20
25
30
t d(off) - - - -
35
180
400
140
100
200
80
350
I C = 40A
35
45
t r i - Nanoseconds
60
60
I C = 40A
40
40
I C = 20A
20
20
0
25
30
35
tri
t d(on) - - - -
115
200
125
40
t d(on) - - - -
38
RG = 3Ω , VGE = 15V
VCE = 1500V
25
36
TJ = 25ºC
20
34
15
32
TJ = 125ºC
10
30
28
26
10
15
20
25
30
35
40
39
38
RG = 3Ω , VGE = 15V
32
105
I C - Amperes
Fig. 23. Inductive Turn-on Switching Times vs.
Junction Temperature
36
95
0
40
RG - Ohms
40
85
5
0
20
75
t d(on) - Nanoseconds
80
t d(on) - Nanoseconds
VCE = 1500V
tri
30
100
15
65
Fig. 22. Inductive Turn-on Switching Times vs.
Collector Current
35
120
80
10
55
TJ - Degrees Centigrade
t d(on) - - - -
5
300
250
25
40
TJ = 125ºC, VGE = 15V
0
450
I C = 20A
120
t r i - Nanoseconds
tri
500
160
250
Fig. 21. Inductive Turn-on Switching Times vs.
Gate Resistance
100
550
VCE = 1500V
I C - Amperes
120
600
t d(off) - Nanoseconds
400
10
t d(off) - Nanoseconds
450
160
80
tfi
200
500
TJ = 125ºC
200
240
RG = 3Ω , VGE = 15V
VCE = 1500V
240
t f i - Nanoseconds
t d(off) - - - -
RG = 3Ω , VGE = 15V
600
t f i - Nanoseconds
320
Fig. 20. Inductive Turn-off Switching Times vs.
Junction Temperature
37
28
36
24
35
20
34
IC = 40A
16
33
12
32
IC = 20A
8
31
4
30
0
25
35
45
55
65
75
85
95
105
115
t d(on) - Nanoseconds
t r i - Nanoseconds
VCE = 1500V
29
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: B_20N300C(9P) 8-12-13