Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE(sat) 6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 50 A IC110 TC = 110°C 20 A ICM TC = 25°C, 1ms 430 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 3 Clamped Inductive Load ICM = 160 VCES 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive 10 μs PC TC 417 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 30..170 / 7..36 N/lb 4000 V~ 8 g = 25°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force with Clip VISOL 50/60Hz, 5 Seconds Weight Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC V 5.0 4.5 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved C G = Gate E = Emitter Isolated Tab C = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Advantages Low Gate Drive Requirement High Power Density Switch-Mode and Resonant-Mode Power Supplies V 25 μA 6.5 mA Note 2, TJ = 125°C = 20A, VGE = 15V, Note 1 E Applications Characteristic Values Min. Typ. Max. BVCES G 5.1 ±200 nA 6.0 V V DS100553(8/13) IXBL20N300C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 1000V td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff VCE = 1500V, RG = 3 Note 3 Inductive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 1500V, RG = 3 Note 3 RthJC RthCS E 43 S 10 440 160 nF pF pF 425 53 160 nC nC nC 33 12 23.0 370 110 2.6 Inductive load, TJ = 25°C IC = 20A, VGE = 15V ISOPLUS i5-PakTM HV (IXBL) Outline ns ns mJ ns ns mJ 33 14 23.0 435 175 3.7 ns ns mJ ns ns mJ 0.15 0.30 °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 20A, VGE = 0V, Note 1 trr IF = 20A, VGE = 0V, -diF/dt = 100A/μs IRM QRM Notes: 5.0 VR = 100V, VGE = 0V S 4 1 2 + 3 c e1 e1 b3 b2 PIN 1 PIN 2 PIN 3 PIN 4 SYM INCHES MIN MAX b1 e = Gate = Emitter = Collector = Isolated MILLIMETER MIN MAX A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 V 864 ns 31 A 13.5 μC 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 3. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBL20N300C Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 40 240 VGE = 15V 10V 8V 35 200 7V 25 20 I C - Amperes I C - Amperes 30 VGE = 15V 12V 10V 6V 15 9V 160 8V 120 7V 80 10 40 5 6V 5V 0 0 0 1 2 3 4 5 6 0 5 10 15 40 1.5 VGE = 15V 10V 8V 7V 30 VGE = 15V 1.4 30 I C = 40A 1.3 VCE(sat) - Normalized I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 35 20 VCE - Volts VCE - Volts 6V 25 20 15 10 1.2 I C = 20A 1.1 1.0 0.9 5V 5 I C = 10A 0.8 0 0.7 0 1 2 3 4 5 6 7 8 -50 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 10 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 90 80 TJ = 25ºC 9 70 I C - Amperes VCE - Volts 8 7 6 I C = 40A 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 5 20A 20 4 10 10A 0 3 5 6 7 8 9 10 11 12 13 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXBL20N300C Fig. 8. Gate Charge Fig. 7. Transconductance 16 100 TJ = - 40ºC 90 VCE = 1000V 14 I C = 20A 80 I G = 10mA 12 25ºC 60 VGE - Volts g f s - Siemens 70 125ºC 50 40 10 8 6 30 4 20 2 10 0 0 0 10 20 30 40 50 60 70 80 90 0 50 100 I C - Amperes 200 250 300 350 400 450 35 40 QG - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance 100,000 100 90 TJ = 25ºC f = 1 MHz J ---Capacitance - PicoFarads 125ºC 80 70 I F - Amperes 150 60 VGE = 0V 50 VGE = 15V 40 30 Cies 10,000 Coes 1,000 20 Cres 10 0 100 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 VCE - Volts VF - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1 180 160 140 0.1 Z (th)JC - ºC / W I C - Amperes 120 100 80 60 40 TJ = 125ºC 20 RG = 3Ω dv / dt < 10V / ns 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBL20N300C Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 I C - Amperes I C - Amperes 25µs 10 100µs 1ms 1 25µs 10 100µs 1ms 1 10ms 10ms TJ = 150ºC 0.1 100ms TC = 25ºC TJ = 150ºC 0.1 100ms TC = 75ºC DC Single Pulse Single Pulse 0.01 DC 0.01 1 10 100 1,000 10,000 1 10 100 VCE - Volts Fig. 15. Inductive Switching Energy Loss vs. Gate Resistance 11 Eoff 10 TJ = 125ºC , VGE = 15V --- 9 55 8 35 6 30 5 25 4 20 2 1 10 15 20 25 30 35 --- 40 VCE = 1500V 6 35 TJ = 125ºC 5 25 3 15 10 1 10 5 0 40 5 10 --- 15 20 44 220 40 36 6 32 I C = 40A 5 28 4 24 3 2 1 55 40 tfi 2400 t d(off) - - - - 2100 65 75 85 95 105 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 115 VCE = 1500V 1800 180 1500 I C = 40A 160 1200 I C = 20A 140 900 120 600 16 100 300 12 125 80 20 I C = 20A 45 35 Fig. 18. Inductive Turn-off Switching Times vs. Gate Resistance 200 Eon - MilliJoules 7 35 30 0 0 5 10 15 20 RG - Ohms 25 30 35 40 t d(off) - Nanoseconds VCE = 1500V 25 25 TJ = 125ºC, VGE = 15V RG = 3Ω , VGE = 15V 8 Eoff - MilliJoules Eon - 48 240 t f i - Nanoseconds Eoff 20 TJ = 25ºC I C - Amperes Fig. 17. Inductive Switching Energy Loss vs. Junction Temperature 9 30 4 RG - Ohms 10 45 2 15 I C = 20A Eon - 50 Eon - MilliJoules 40 7 5 Eoff 7 E on - MilliJoules I C = 40A 8 0 Fig. 16. Inductive Switching Energy Loss vs. Collector Current 45 3 10,000 TJ = 125ºC , VGE = 15V 50 VCE = 1500V 9 E off - MilliJoules Eon - 60 Eoff - MilliJoules 12 1,000 VCE - Volts IXBL20N300C Fig. 19. Inductive Turn-off Switching Times vs. Collector Current tfi 280 550 220 120 350 TJ = 25ºC 300 40 0 15 20 25 30 t d(off) - - - - 35 180 400 140 100 200 80 350 I C = 40A 35 45 t r i - Nanoseconds 60 60 I C = 40A 40 40 I C = 20A 20 20 0 25 30 35 tri t d(on) - - - - 115 200 125 40 t d(on) - - - - 38 RG = 3Ω , VGE = 15V VCE = 1500V 25 36 TJ = 25ºC 20 34 15 32 TJ = 125ºC 10 30 28 26 10 15 20 25 30 35 40 39 38 RG = 3Ω , VGE = 15V 32 105 I C - Amperes Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature 36 95 0 40 RG - Ohms 40 85 5 0 20 75 t d(on) - Nanoseconds 80 t d(on) - Nanoseconds VCE = 1500V tri 30 100 15 65 Fig. 22. Inductive Turn-on Switching Times vs. Collector Current 35 120 80 10 55 TJ - Degrees Centigrade t d(on) - - - - 5 300 250 25 40 TJ = 125ºC, VGE = 15V 0 450 I C = 20A 120 t r i - Nanoseconds tri 500 160 250 Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance 100 550 VCE = 1500V I C - Amperes 120 600 t d(off) - Nanoseconds 400 10 t d(off) - Nanoseconds 450 160 80 tfi 200 500 TJ = 125ºC 200 240 RG = 3Ω , VGE = 15V VCE = 1500V 240 t f i - Nanoseconds t d(off) - - - - RG = 3Ω , VGE = 15V 600 t f i - Nanoseconds 320 Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature 37 28 36 24 35 20 34 IC = 40A 16 33 12 32 IC = 20A 8 31 4 30 0 25 35 45 55 65 75 85 95 105 115 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 1500V 29 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_20N300C(9P) 8-12-13