ROHM SH8M11

Data Sheet
4V Drive Nch + Pch MOSFET
SH8M11
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
SOP8
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
(8)
(5)
(1)
(4)
 Application
Switching
 Inner circuit
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SH8M11
Taping
TB
2500

(8)
 Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD
Tch
Tstg
*2
Limits
Tr1 : N-ch Tr2 : P-ch
30
20
3.5
14
1.6
14
30
20
3.5
12
1.6
12
2.0
1.4
150
55 to +150
Unit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
(7)
∗2
(6)
(5)
∗2
∗1
(1)
∗1
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
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1/10
2011.10 - Rev.A
Data Sheet
SH8M11
 Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
Conditions
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
-
70
98
RDS (on)*
ID=3.5A, VGS=10V
-
90
126
m ID=3.5A, VGS=4.5V
100
140
Forward transfer admittance
l Yfs l *
1.5
-
-
S
VDS=10V, ID=3.5A
Input capacitance
Ciss
-
85
-
pF
VDS=10V
Zero gate voltage drain current
ID=3.5A, VGS=4V
Output capacitance
Coss
-
40
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
20
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
4
-
ns
ID=1.7A, VDD 15V
tr *
-
8
-
ns
VGS=10V
td(off) *
-
18
-
ns
RL=8.8
Rise time
Turn-off delay time
Fall time
tf *
-
3
-
ns
RG=10
Total gate charge
Qg *
-
1.9
-
nC
ID=3.5A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
0.8
0.4
-
nC
nC
VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=3.5A, VGS=0V
*Pulsed
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2/10
2011.10 - Rev.A
Data Sheet
SH8M11
 Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
30
IDSS
Conditions
-
-
V
ID=1mA, VGS=0V
-
1
A
VDS=30V, VGS=0V
-
2.5
V
VDS=10V, ID=1mA
Gate threshold voltage
VGS (th)
1.0
Static drain-source on-state
resistance
RDS (on)*
-
70
98
ID=3.5A, VGS=10V
-
100
140
m ID=1.7A, VGS=4.5V
Forward transfer admittance
l Yfs l *
-
110
155
2.5
-
-
S
VDS=10V, ID=3.5A
ID=1.7A, VGS=4.0V
Input capacitance
Ciss
-
410
-
pF
VDS=10V
Output capacitance
Coss
-
55
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
55
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
9
-
ns
ID=1.7A, VDD 15V
tr *
-
18
-
ns
VGS=10V
td(off) *
-
35
-
ns
RL=8.8
Rise time
Turn-off delay time
Fall time
tf *
-
12
-
ns
RG=10
Total gate charge
Qg *
-
4.2
-
nC
ID=3.5A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.7
1.1
-
nC
nC
VGS=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=3.5A, VGS=0V
*Pulsed
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3/10
2011.10 - Rev.A
Data Sheet
SH8M11
Electrical characteristic curves (Ta=25C)
〈Tr.1(Nch)〉
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
3.5
3.5
Ta=25°C
Pulsed
3
VGS= 10V
VGS= 4.5V
VGS= 4.0V
2.5
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
3
2
VGS= 2.8V
1.5
1
2.5
2
VGS= 2.5V
1.5
1
VGS= 2.5V
0.5
0.5
0
0
0
0.2
0.4
0.6
0.8
1
0
2
6
8
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10
1000
VDS= 10V
Pulsed
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
DRAIN CURRENT : ID[A]
4
DRAIN-SOURCE VOLTAGE : VDS[V]
10
0.1
0.01
VGS= 4.0V
VGS= 4.5V
VGS= 10V
100
.
10
0.001
0
1
2
0.1
3
1
10
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
1000
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
VGS= 2.8V
VGS= 10V
VGS= 4.5V
VGS= 4.0V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.1
1
10
0.1
DRAIN-CURRENT : ID[A]
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1
10
DRAIN-CURRENT : ID[A]
4/10
2011.10 - Rev.A
Data Sheet
SH8M11
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 4.0V
Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.1
1
VDS= 10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
10
0.1
DRAIN-CURRENT : ID[A]
200
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VGS=0V
Pulsed
SOURCE CURRENT : Is [A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
Ta=25°C
Pulsed
150
ID= 1.75A
ID= 3.5A
100
50
0
0
0.5
1
1.5
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10
1000
tf
GATE-SOURCE VOLTAGE : VGS [V]
Ta=25°C
VDD= 15V
VGS=10V
RG=10Ω
Pulsed
td(off)
SWITCHING TIME : t [ns]
1
DRAIN-CURRENT : ID[A]
100
td(on)
10
8
6
4
Ta=25°C
VDD= 15V
ID= 3.5A
Pulsed
2
tr
1
0
0.01
0.1
1
10
0
DRAIN-CURRENT : ID[A]
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1
2
3
4
5
TOTAL GATE CHARGE : Qg [nC]
5/10
2011.10 - Rev.A
Data Sheet
SH8M11
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Aera
1000
100
Operation in this area is limited by RDS(ON)
(VGS=10V)
Coss
DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
Ciss
100
Crss
10
10
PW =100us
1
PW =1ms
PW = 10ms
0.1
Ta=25°C
f=1MHz
VGS=0V
Ta = 25°C
Single Pulse : 1Unit
MOUNTED ON CERAMIC BOARD
1
DC operation
0.01
0.01
0.1
1
10
100
0.1
DRAIN-SOURCE VOLTAGE : VDS[V]
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
0.1
0.01
0.001
0.0001
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.01
1
100
PULSE WIDTH : Pw(s)
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6/10
2011.10 - Rev.A
〈Tr.2(Pch)〉
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Ta=25°C
Pulsed
3
VGS= -3.0V
3
VGS= -10V
VGS= -4.5V
VGS= -4.0V
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
Data Sheet
SH8M11
VGS= -3.0V
2
VGS= -2.8V
1
VGS= -2.8V
VGS= -10V
VGS= -4.5V
VGS= -4.0V
2
VGS= -2.5V
1
Ta=25°C
Pulsed
VGS= -2.5V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
10
8
10
1000
VDS= -10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0.1
0.01
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
10
0.001
0
1
2
0.1
3
1
GATE-SOURCE VOLTAGE : -VGS[V]
10
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
1000
VGS= -10V
Pulsed
VGS= -4.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
6
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : -ID[A]
4
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
100
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
0.1
1
10
0.1
DRAIN-CURRENT : -ID[A]
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7/10
1
DRAIN-CURRENT : -ID[A]
10
2011.10 - Rev.A
Data Sheet
SH8M11
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Forward Transfer Admittance
vs. Drain Current
100
VGS= -4.0V
Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
1
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
10
0.1
VDS= -10V
Pulsed
10
0.1
DRAIN-CURRENT : -ID[A]
1
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
250
VGS=0V
Pulsed
Ta=25°C
Pulsed
ID= -1.7A
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
SOURCE CURRENT : -Is [A]
100
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
200
ID= -3.5A
150
100
50
0
0
0.5
1
1.5
0
5
SOURCE-DRAIN VOLTAGE : -VSD [V]
10
15
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.12 Dynamic Input Characteristics
Fig.11 Switching Characteristics
10
1000
td(off)
GATE-SOURCE VOLTAGE : -VGS [V]
Ta=25°C
VDD= -15V
VGS= -10V
RG=10Ω
Pulsed
tf
SWITCHING TIME : t [ns]
10
DRAIN-CURRENT : -ID[A]
100
td(on)
10
tr
1
8
6
4
Ta=25°C
VDD= -15V
ID= -3.5A
RG=10Ω
Pulsed
2
0
0.01
0.1
1
10
0
DRAIN-CURRENT : -ID[A]
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2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
8/10
2011.10 - Rev.A
Data Sheet
SH8M11
Fig.14 Maximum Safe Operating Aera
Fig.13 Typical Capacitance vs. Drain-Source Voltage
100
10000
Operation in this area is limited by RDS(ON)
(VGS=-10V)
10
DRAIN CURRENT : -ID (A)
CAPACITANCE : C [pF]
Ciss
1000
Coss
Crss
100
PW =100us
1
PW =1ms
PW = 10ms
0.1
Ta = 25°C
Single Pulse : 1Unit
Mounted on a CERAMIC board
Ta=25°C
f=1MHz
VGS=0V
10
DC operation
0.01
0.01
0.1
1
10
100
0.1
DRAIN-SOURCE VOLTAGE : -VDS [V]
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 82.3 °C/W
<Mounted on a CERAMIC
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
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9/10
2011.10 - Rev.A
Data Sheet
SH8M11
 Measurement circuits
<Tr1(Nch)>
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
tf
ton
Fig.1-1 Switching Time Measurement Circuit
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
<Tr2(Pch)>
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
50%
RL
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.3-2 Switching Waveforms
Fig.3-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
10/10
2011.10 - Rev.A
Notice
Notes
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R1120A