Data Sheet 4V Drive Nch + Pch MOSFET SH8M11 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). (8) (5) (1) (4) Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) SH8M11 Taping TB 2500 (8) Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP *1 Is Isp *1 PD Tch Tstg *2 Limits Tr1 : N-ch Tr2 : P-ch 30 20 3.5 14 1.6 14 30 20 3.5 12 1.6 12 2.0 1.4 150 55 to +150 Unit (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (7) ∗2 (6) (5) ∗2 ∗1 (1) ∗1 (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE V V A A A A W / TOTAL W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.10 - Rev.A Data Sheet SH8M11 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Conditions 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 70 98 RDS (on)* ID=3.5A, VGS=10V - 90 126 m ID=3.5A, VGS=4.5V 100 140 Forward transfer admittance l Yfs l * 1.5 - - S VDS=10V, ID=3.5A Input capacitance Ciss - 85 - pF VDS=10V Zero gate voltage drain current ID=3.5A, VGS=4V Output capacitance Coss - 40 - pF VGS=0V Reverse transfer capacitance Crss - 20 - pF f=1MHz Turn-on delay time td(on) * - 4 - ns ID=1.7A, VDD 15V tr * - 8 - ns VGS=10V td(off) * - 18 - ns RL=8.8 Rise time Turn-off delay time Fall time tf * - 3 - ns RG=10 Total gate charge Qg * - 1.9 - nC ID=3.5A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 0.8 0.4 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=3.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.10 - Rev.A Data Sheet SH8M11 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 30 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V - 2.5 V VDS=10V, ID=1mA Gate threshold voltage VGS (th) 1.0 Static drain-source on-state resistance RDS (on)* - 70 98 ID=3.5A, VGS=10V - 100 140 m ID=1.7A, VGS=4.5V Forward transfer admittance l Yfs l * - 110 155 2.5 - - S VDS=10V, ID=3.5A ID=1.7A, VGS=4.0V Input capacitance Ciss - 410 - pF VDS=10V Output capacitance Coss - 55 - pF VGS=0V Reverse transfer capacitance Crss - 55 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=1.7A, VDD 15V tr * - 18 - ns VGS=10V td(off) * - 35 - ns RL=8.8 Rise time Turn-off delay time Fall time tf * - 12 - ns RG=10 Total gate charge Qg * - 4.2 - nC ID=3.5A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 1.7 1.1 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=3.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.10 - Rev.A Data Sheet SH8M11 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 3.5 3.5 Ta=25°C Pulsed 3 VGS= 10V VGS= 4.5V VGS= 4.0V 2.5 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 3 2 VGS= 2.8V 1.5 1 2.5 2 VGS= 2.5V 1.5 1 VGS= 2.5V 0.5 0.5 0 0 0 0.2 0.4 0.6 0.8 1 0 2 6 8 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 1000 VDS= 10V Pulsed Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 DRAIN CURRENT : ID[A] 4 DRAIN-SOURCE VOLTAGE : VDS[V] 10 0.1 0.01 VGS= 4.0V VGS= 4.5V VGS= 10V 100 . 10 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1000 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed VGS= 2.8V VGS= 10V VGS= 4.5V VGS= 4.0V Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : ID[A] 4/10 2011.10 - Rev.A Data Sheet SH8M11 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 VDS= 10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 10 0.1 DRAIN-CURRENT : ID[A] 200 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 Ta=25°C Pulsed 150 ID= 1.75A ID= 3.5A 100 50 0 0 0.5 1 1.5 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD= 15V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] 100 td(on) 10 8 6 4 Ta=25°C VDD= 15V ID= 3.5A Pulsed 2 tr 1 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 TOTAL GATE CHARGE : Qg [nC] 5/10 2011.10 - Rev.A Data Sheet SH8M11 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 1000 100 Operation in this area is limited by RDS(ON) (VGS=10V) Coss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] Ciss 100 Crss 10 10 PW =100us 1 PW =1ms PW = 10ms 0.1 Ta=25°C f=1MHz VGS=0V Ta = 25°C Single Pulse : 1Unit MOUNTED ON CERAMIC BOARD 1 DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 0.01 0.001 0.0001 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W <Mounted on a CERAMIC board> 0.01 1 100 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.10 - Rev.A 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Pulsed 3 VGS= -3.0V 3 VGS= -10V VGS= -4.5V VGS= -4.0V DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] Data Sheet SH8M11 VGS= -3.0V 2 VGS= -2.8V 1 VGS= -2.8V VGS= -10V VGS= -4.5V VGS= -4.0V 2 VGS= -2.5V 1 Ta=25°C Pulsed VGS= -2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 10 8 10 1000 VDS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 VGS= -4.0V VGS= -4.5V VGS= -10V 100 10 0.001 0 1 2 0.1 3 1 GATE-SOURCE VOLTAGE : -VGS[V] 10 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1000 VGS= -10V Pulsed VGS= -4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics DRAIN CURRENT : -ID[A] 4 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] 100 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 1 DRAIN-CURRENT : -ID[A] 10 2011.10 - Rev.A Data Sheet SH8M11 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 100 VGS= -4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 1 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 VDS= -10V Pulsed 10 0.1 DRAIN-CURRENT : -ID[A] 1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 250 VGS=0V Pulsed Ta=25°C Pulsed ID= -1.7A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] 100 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 200 ID= -3.5A 150 100 50 0 0 0.5 1 1.5 0 5 SOURCE-DRAIN VOLTAGE : -VSD [V] 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10 1000 td(off) GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed tf SWITCHING TIME : t [ns] 10 DRAIN-CURRENT : -ID[A] 100 td(on) 10 tr 1 8 6 4 Ta=25°C VDD= -15V ID= -3.5A RG=10Ω Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] 8/10 2011.10 - Rev.A Data Sheet SH8M11 Fig.14 Maximum Safe Operating Aera Fig.13 Typical Capacitance vs. Drain-Source Voltage 100 10000 Operation in this area is limited by RDS(ON) (VGS=-10V) 10 DRAIN CURRENT : -ID (A) CAPACITANCE : C [pF] Ciss 1000 Coss Crss 100 PW =100us 1 PW =1ms PW = 10ms 0.1 Ta = 25°C Single Pulse : 1Unit Mounted on a CERAMIC board Ta=25°C f=1MHz VGS=0V 10 DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : -VDS [V] 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 82.3 °C/W <Mounted on a CERAMIC 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.10 - Rev.A Data Sheet SH8M11 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.3-2 Switching Waveforms Fig.3-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A