Green Product STM4470 SamHop Microelectronics Corp. Oct. 16. 2006 Ver1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS d ID RDS(ON) Super high dense cell design for low RDS(ON). ( m Ω ) Max Rugged and reliable. 10 @ VGS = 10V 40V 10A Surface Mount Package. 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter d Limit Unit 40 V Drain-Source Voltage VDS Gate-Source Voltage VGS 20 V Drain Current-Continuous a @TJ=25 C b -Pulsed ID 10 A IDM 39 A Drain-Source Diode Forward Current a IS 1.7 A Maximum Power Dissipation a PD 2.5 W TJ, TSTG -55 to 150 C R JA 50 C /W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 STM4470 ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage d BVDSS VGS =0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS=32V, VGS = 0V 1 Gate-Body Leakage IGSS VGS = 20V, VDS =0V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS 40 V uA ON CHARACTERISTICS b Forward Transconductance 3 VGS= 10V, ID = 10A 8 10 m ohm VGS = 4.5V, ID = 6A 11 13 m ohm VDS = 10V, VGS = 10V ID(ON) gFS On-State Drain Current 1.7 1 20 V A 20 S 1020 PF 240 PF 135 PF 15 ns 22 ns 48 ns 12 ns VDS =20V, ID = 10A,VGS =10V 19.5 nC VDS =20V, ID = 10A,VGS =4.5V 9.8 nC VDS =20V, ID = 10A VGS =10V 2 nC 5.5 nC VDS = 10V, ID =10A DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time VDS =20V, VGS = 0V f =1.0MHZ c tD(ON) VDD = 20V ID = 1A VGS = 10V RGEN = 3.3 ohm t tD(OFF) Fall Time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 STM4470 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter b DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Min Typ C Max Unit Condition Symbol VGS = 0V, Is =1.7A VSD 1.2 0.73 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=3.3 ohm and tf < tf max 20 30 VGS=3V VGS=4.5V VGS=8V 16 VGS=10V 20 ID, Drain Current (A) ID, Drain Current (A) 25 15 10 VGS=2.5V 5 12 4 0 0 0 0.5 1 1.5 2 2.5 0 3 0.6 1.2 1.8 2.4 3.0 3.6 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Figure 2. Transfer Characteristics Figure 1. Output Characteristics 1.75 15 1.60 RDS(ON), On-Resistance Normalized 16 VGS=4.5V RDS(on) (m Ω) 25 C 125 C 8 12 9 VGS=10V 6 3 VGS=10VID=10A 1.45 1.30 VGS=4.5VID=6A 1.15 1.0 0 1 1 5 10 15 20 25 0 30 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 3 V S T M4470 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 36 20.0 I D =10A Is , S ource-drain current (A) R DS (on) (m Ω) 30 24 125 C 18 12 75 C 25 C 6 0 25 C 10.0 75 C 125 C 1.0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM4470 10 VGS, Gate to Source Voltage (V) 1800 1500 C, Capacitance (pF) Ciss 6 1200 900 600 Coss 300 VDS=20V ID=10A 8 6 4 2 Crss 0 0 5 10 15 20 25 0 30 0 3 VDS, Drain-to Source Voltage (V) 6 9 15 12 18 21 24 Qg, Total Gate Charge (nC) Figure 9. Capacitance Figure 10. Gate Charge 50 TD(on) 10 V DS =20V ,ID=1A 1 1 0.1 0.03 DC 0m ms s 1s VGS=10V Single Pulse TA=25 C 0.1 60 100 300 600 6 10 S 10 V G S =10V 1 10 RD ID, Drain Current (A) Switching Time (ns) Tf (O 10 Tr TD(off) 100 60 N) Lim it 600 1 10 30 50 VDS, Drain-Source Voltage (V) Rg, Gate Resistance (Ω) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 Single Pulse 0.01 0.00001 1. RthJA (t)=r (t) * R JAth 2. R th JA=See Datasheet 3. TJM-TA = PDM* R JA th (t) 4. Duty Cycle, D=t1/t2 on 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 100 1000 S T M4470 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 6 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M4470 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 D0 D1 E E1 E2 P0 P1 P2 T 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 1.75 5.5 ²0.05 8.0 4.0 2.0 ²0.05 0.3 ²0.05 K S G R V K0 SO-8 Reel UNIT:р TAPE SIZE REEL SIZE M N W W1 H 12 р ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 7 2.0 ²0.15