STM4470

Green
Product
STM4470
SamHop Microelectronics Corp.
Oct. 16. 2006 Ver1.1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
VDSS
d
ID
RDS(ON)
Super high dense cell design for low RDS(ON).
( m Ω ) Max
Rugged and reliable.
10 @ VGS = 10V
40V
10A
Surface Mount Package.
13 @ VGS = 4.5V
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Parameter
d
Limit
Unit
40
V
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
20
V
Drain Current-Continuous a @TJ=25 C
b
-Pulsed
ID
10
A
IDM
39
A
Drain-Source Diode Forward Current a
IS
1.7
A
Maximum Power Dissipation a
PD
2.5
W
TJ, TSTG
-55 to 150
C
R JA
50
C /W
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
1
STM4470
ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
Symbol
Condition
Drain-Source Breakdown Voltage d
BVDSS
VGS =0V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS=32V, VGS = 0V
1
Gate-Body Leakage
IGSS
VGS = 20V, VDS =0V
100 nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250uA
Drain-Source On-State Resistance
RDS(ON)
OFF CHARACTERISTICS
40
V
uA
ON CHARACTERISTICS b
Forward Transconductance
3
VGS= 10V, ID = 10A
8
10 m ohm
VGS = 4.5V, ID = 6A
11
13 m ohm
VDS = 10V, VGS = 10V
ID(ON)
gFS
On-State Drain Current
1.7
1
20
V
A
20
S
1020
PF
240
PF
135
PF
15
ns
22
ns
48
ns
12
ns
VDS =20V, ID = 10A,VGS =10V
19.5
nC
VDS =20V, ID = 10A,VGS =4.5V
9.8
nC
VDS =20V, ID = 10A
VGS =10V
2
nC
5.5
nC
VDS = 10V, ID =10A
DYNAMIC CHARACTERISTICS c
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS =20V, VGS = 0V
f =1.0MHZ
c
tD(ON)
VDD = 20V
ID = 1A
VGS = 10V
RGEN = 3.3 ohm
t
tD(OFF)
Fall Time
t
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2
STM4470
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
b
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
Min Typ C Max Unit
Condition
Symbol
VGS = 0V, Is =1.7A
VSD
1.2
0.73
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=3.3 ohm and tf < tf max
20
30
VGS=3V
VGS=4.5V
VGS=8V
16
VGS=10V
20
ID, Drain Current (A)
ID, Drain Current (A)
25
15
10
VGS=2.5V
5
12
4
0
0
0
0.5
1
1.5
2
2.5
0
3
0.6
1.2
1.8
2.4
3.0
3.6
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
1.75
15
1.60
RDS(ON), On-Resistance
Normalized
16
VGS=4.5V
RDS(on) (m Ω)
25 C
125 C
8
12
9
VGS=10V
6
3
VGS=10VID=10A
1.45
1.30
VGS=4.5VID=6A
1.15
1.0
0
1
1
5
10
15
20
25
0
30
25
50
75
100
125
150
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with
Drain Current and Temperature
3
V
S T M4470
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.4
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
36
20.0
I D =10A
Is , S ource-drain current (A)
R DS (on) (m Ω)
30
24
125 C
18
12
75 C
25 C
6
0
25 C
10.0
75 C
125 C
1.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V G S , G ate-S ource Voltage (V )
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
STM4470
10
VGS, Gate to Source Voltage (V)
1800
1500
C, Capacitance (pF)
Ciss
6
1200
900
600
Coss
300
VDS=20V
ID=10A
8
6
4
2
Crss
0
0
5
10
15
20
25
0
30
0
3
VDS, Drain-to Source Voltage (V)
6
9
15
12
18
21
24
Qg, Total Gate Charge (nC)
Figure 9. Capacitance
Figure 10. Gate Charge
50
TD(on)
10
V DS =20V ,ID=1A
1
1
0.1
0.03
DC
0m
ms
s
1s
VGS=10V
Single Pulse
TA=25 C
0.1
60 100 300 600
6 10
S
10
V G S =10V
1
10
RD
ID, Drain Current (A)
Switching Time (ns)
Tf
(O
10
Tr
TD(off)
100
60
N)
Lim
it
600
1
10
30 50
VDS, Drain-Source Voltage (V)
Rg, Gate Resistance (Ω)
Figure 12. Maximum Safe
Operating Area
Figure 11.switching characteristics
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
0.01
Single Pulse
0.01
0.00001
1. RthJA (t)=r (t) * R JAth
2. R th
JA=See Datasheet
3. TJM-TA = PDM* R JA th
(t)
4. Duty Cycle, D=t1/t2
on
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
100
1000
S T M4470
PAC K AG E OUT LINE DIME NS IONS
S O-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008
TYP.
0.016 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
6
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
S T M4470
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
D0
D1
E
E1
E2
P0
P1
P2
T
2.10
ӿ1.5
(MIN)
ӿ1.5
+ 0.1
- 0.0
12.0
²0.3
1.75
5.5
²0.05
8.0
4.0
2.0
²0.05
0.3
²0.05
K
S
G
R
V
K0
SO-8 Reel
UNIT:р
TAPE SIZE
REEL SIZE
M
N
W
W1
H
12 р
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
7
2.0
²0.15