STU/D616S Green Product S a mHop Microelectronics C orp. Ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Typ ID Rugged and reliable. 64 @ VGS=10V 60V Suface Mount Package. 16A 81 @ VGS=4.5V ESD Protected. D G D G S STU SERIES TO-252AA(D-PAK) ABSOLUTE Symbol VDS VGS ID IDM S STD SERIES TO-251(l-PAK) MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Limit Drain-Source Voltage 60 Gate-Source Voltage ±20 a Drain Current-Continuous TA=25 °C 16 -Pulsed b 46.8 c IAS Avalanche Current EAS Avalanche Energy c PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a TA=25 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Units V V A A 9 A 20.25 mJ 60 W -55 to 175 °C 2.5 50 °C/W °C/W Feb,12,2010 1 www.samhop.com.tw STU/D616S Ver1.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS e BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min VGS=0V , ID=250uA VGS=0V , ID=10mA 60 65 Typ Max Units V V 1 ±10 VDS=48V , VGS=0V VGS= ±20V , VDS=0V A uA a ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VGS=10V , ID=8A VGS=4.5V , ID=6A 1 1.8 3 64 77 V m ohm 81 99 m ohm VDS=5V , ID=8A 13.5 S VDS=20V,VGS=0V f=1.0MHz 780 58.5 46.5 pF pF pF VDD=30V ID=1A VGS=10V RGEN= 6 ohm 14 13 38 9.4 ns ns ns ns nC nC nC nC b VDS=30V,ID=8A,VGS=10V VDS=30V,ID=8A,VGS=4.5V VDS=30V,ID=8A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD VGS=0V,IS=1.5A 13.5 6.7 1.88 3.71 0.8 1.5 1.3 A V Notes _ 2%. _ 300us, Duty Ctcle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,RG=25Ω,IAS=9A,VDD <_ V(BR)DSS.(See Figure13) e.Pulse Test : Pulse Width < 1us,Duty Cycle < 1%. Feb,12,2010 2 www.samhop.com.tw STU/D616S Ver1.1 10 15 ID , Drain C urrent(A) VG S = 10V I D , Drain C urrent (A) VG S = 4.5V VG S = 4V 12 9 6 VG S = 3.5V 3 8 6 T j=125 C 4 25 C 3 VG S = 3V -55 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 Figure 1. Output Characteristics 3.6 4.5 5.4 2.5 R DS (ON) , On-R es is tance Normalized 150 R DS (on) (m Ω ) 2.7 Figure 2. Transfer Characteristics 180 120 V G S =4.5V 90 60 V G S =10V 30 3 1 6 9 12 V G S =10V I D =8A 2.2 1.9 1.6 1.3 V G S =4.5V I D =6A 1.0 0 15 0 25 50 75 100 125 150 T j( C ) ID, Drain Current (A) Tj, Junction Temperature ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.8 VGS, Gate-to-Source Voltage(V) VDS, Drain-to-Source Voltage(V) 1 0.9 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C ) Tj, Junction Temperature ( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Feb,12,2010 3 www.samhop.com.tw STU/D616S Ver1.1 20.0 240 I D =8A 25 C Is , S ource-drain current (A) R DS (on) (m Ω ) 200 160 125 C 120 75 C 80 25 C 40 0 0 2 4 6 8 10.0 5.0 125 C 75 C 1.0 10 0 VGS, Gate-Source Voltage (V) 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V G S , G ate to S ource V oltage (V ) 1200 1000 C , C apacitance (pF ) 0.6 VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage C is s 800 600 400 200 C os s C rs s 0 V DS =30V I D =8A 8 6 4 2 0 0 5 10 15 20 25 0 30 2 4 6 8 10 14 16 12 VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Capacitance Figure 10. Gate Charge 80 300 100 I D , Drain C urrent (A) S witching T ime (ns ) 0.3 TD(off ) TD(on) 10 Tr Tf VDS=30V,ID=1A VGS=10V 1 10 RD O S( L N) im 10 it 1m 10 m DC s 0u s s 1 VGS=10V Single Pulse TA=25 C 0.1 0.03 1 10 100 0.1 Rg, Gate Resistance (Ω) 1 10 60 VDS, Gate-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11. Switching Characteristics Feb,12,2010 4 www.samhop.com.tw STU/D616S Ver1.1 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Feb,12,2010 5 www.samhop.com.tw STU/D616S Ver1.1 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Feb,12,2010 6 www.samhop.com.tw STU/D616S Ver 1.1 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Feb,12,2010 7 www.samhop.com.tw STU/D616S Ver1.1 TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape D1 B0 E E2 T E1 P1 P2 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE M N W T H K S ӿ 330 ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 - 0 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Feb,12,2010 8 www.samhop.com.tw