STU/D616S

STU/D616S
Green
Product
S a mHop Microelectronics C orp.
Ver1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Typ
ID
Rugged and reliable.
64 @ VGS=10V
60V
Suface Mount Package.
16A
81 @ VGS=4.5V
ESD Protected.
D
G
D
G
S
STU SERIES
TO-252AA(D-PAK)
ABSOLUTE
Symbol
VDS
VGS
ID
IDM
S
STD SERIES
TO-251(l-PAK)
MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Parameter
Limit
Drain-Source Voltage
60
Gate-Source Voltage
±20
a
Drain Current-Continuous
TA=25 °C
16
-Pulsed
b
46.8
c
IAS
Avalanche Current
EAS
Avalanche Energy c
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
TA=25 °C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Units
V
V
A
A
9
A
20.25
mJ
60
W
-55 to 175
°C
2.5
50
°C/W
°C/W
Feb,12,2010
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STU/D616S
Ver1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
e
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
VGS=0V , ID=250uA
VGS=0V , ID=10mA
60
65
Typ
Max
Units
V
V
1
±10
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
A
uA
a
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS b
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VGS=10V , ID=8A
VGS=4.5V , ID=6A
1
1.8
3
64
77
V
m ohm
81
99
m ohm
VDS=5V , ID=8A
13.5
S
VDS=20V,VGS=0V
f=1.0MHz
780
58.5
46.5
pF
pF
pF
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
14
13
38
9.4
ns
ns
ns
ns
nC
nC
nC
nC
b
VDS=30V,ID=8A,VGS=10V
VDS=30V,ID=8A,VGS=4.5V
VDS=30V,ID=8A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
Diode Forward Voltage
VSD
VGS=0V,IS=1.5A
13.5
6.7
1.88
3.71
0.8
1.5
1.3
A
V
Notes
_ 2%.
_ 300us, Duty Ctcle <
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,RG=25Ω,IAS=9A,VDD <_ V(BR)DSS.(See Figure13)
e.Pulse Test : Pulse Width < 1us,Duty Cycle < 1%.
Feb,12,2010
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STU/D616S
Ver1.1
10
15
ID , Drain C urrent(A)
VG S = 10V
I D , Drain C urrent (A)
VG S = 4.5V
VG S = 4V
12
9
6
VG S = 3.5V
3
8
6
T j=125 C
4
25 C
3
VG S = 3V
-55 C
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
Figure 1. Output Characteristics
3.6
4.5
5.4
2.5
R DS (ON) , On-R es is tance
Normalized
150
R DS (on) (m Ω )
2.7
Figure 2. Transfer Characteristics
180
120
V G S =4.5V
90
60
V G S =10V
30
3
1
6
9
12
V G S =10V
I D =8A
2.2
1.9
1.6
1.3
V G S =4.5V
I D =6A
1.0
0
15
0
25
50
75
100
125
150
T j( C )
ID, Drain Current (A)
Tj, Junction Temperature ( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with
Drain Current and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.8
VGS, Gate-to-Source Voltage(V)
VDS, Drain-to-Source Voltage(V)
1
0.9
1.6
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Feb,12,2010
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STU/D616S
Ver1.1
20.0
240
I D =8A
25 C
Is , S ource-drain current (A)
R DS (on) (m Ω )
200
160
125 C
120
75 C
80
25 C
40
0
0
2
4
6
8
10.0
5.0
125 C
75 C
1.0
10
0
VGS, Gate-Source Voltage (V)
0.9
1.2
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V G S , G ate to S ource V oltage (V )
1200
1000
C , C apacitance (pF )
0.6
VSD, Body Diode Forward Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
C is s
800
600
400
200
C os s
C rs s
0
V DS =30V
I D =8A
8
6
4
2
0
0
5
10
15
20
25
0
30
2
4
6
8
10
14 16
12
VDS, Drain-to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
300
100
I D , Drain C urrent (A)
S witching T ime (ns )
0.3
TD(off )
TD(on)
10
Tr
Tf
VDS=30V,ID=1A
VGS=10V
1
10
RD
O
S(
L
N)
im
10
it
1m
10
m
DC s
0u
s
s
1
VGS=10V
Single Pulse
TA=25 C
0.1
0.03
1
10
100
0.1
Rg, Gate Resistance (Ω)
1
10
60
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Figure 11. Switching Characteristics
Feb,12,2010
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STU/D616S
Ver1.1
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Feb,12,2010
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STU/D616S
Ver1.1
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Feb,12,2010
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STU/D616S
Ver 1.1
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Feb,12,2010
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STU/D616S
Ver1.1
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
D1
B0
E
E2
T
E1
P1
P2
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
M
N
W
T
H
K
S
ӿ 330
ӿ330
² 0.5
ӿ97
² 1.0
17.0
+ 1.5
- 0
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Feb,12,2010
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