BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGS _ 20 + V ID 200 mA Pulsed Drain Current(tp 10us) IDM 800 mA Power Dissipation (TA=25 C) PD 225 mW RθJA 556 C/W TJ, Tstg -55 to 150 C Continuous Drain Current (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Device Marking BSS138=J1 WEITRON http://www.weitron.com.tw BSS138 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Typ V(BR)DSS 50 - - V VGS (th) 0.5 - 1.5 V IGSS - - + 0.1 - uA IDSS - - 0.1 0.5 rDS (on) - 5.6 - 10 3.5 gfs 100 - - Ciss - 40 50 Coss - 12 25 Crss - 3.5 5.0 Turn-On Time VDD=30V, ID=200mA td(on) - - Turn-Off Time VDD=30V, ID=100mA td(off) Characteristic Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=250 A Gate-Source Threshold Voltage VDS=VGS, ID=1.0mA Gate-Source Leakage Current +20V VDS=0V, VGS= Zero Gate Voltage Drain Current VDS=25V, VGS=0V VDS=50V, VGS=0V Drain-Source On-Resistance VGS=2.75V, ID < 200mA, TA=-40 C to + 85 C VGS=5.0V, ID=200mA Forward Transconductance VDS=25V, ID=200mA, f=1.0KHZ A mS Dynamic Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ PF Switching (2) WEITRON http://www.weitron.com.tw 20 nS - 20 BSS138 WE IT R ON T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S 0.7 0.9 VGS = 3.5 V TJ = 25 C VGS = 3.25 V 0.6 VGS = 3.0 V 0.5 VGS = 2.75 V 0.4 VGS = 2.5 V 0.3 0.2 0.1 0 VDS = 10 V 0.8 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 0.8 -55 C 0.7 150 C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 0 10 0 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 1.5 2 2.5 3 3.5 4 4.5 120 145 VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) F igure 2. Trans fer C harac teris tic s F igure 1. On-R egion C harac teris tic s 2.2 1.25 ID = 1.0 mA 2 VGS = 10 V ID = 0.8 A 1.8 Vgs(th), VARIANCE (VOLTS) R DS(on), DRAIN-TO-SOURCE RESIST ANCE (NORMALIZED) 25 C 1.6 VGS = 4.5 V ID = 0.5 A 1.4 1.2 1 1.125 1 0.875 0.8 0.6 - 55 -5 45 95 0.75 - 55 145 -30 TJ , JUNCTION TEMPERATURE ( C) VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) VDS = 40 V TJ = 25 C 8 6 4 ID = 200 mA 2 0 0 500 1000 1500 2000 F igure 5. G ate C harge WEITRON 45 70 95 F igure 4. T hres hold Voltage Variation with Temperature QT, TOTAL GATE CHARGE (pC) http://www.weitron.com.tw 20 TJ , JUNCTION TEMPERATURE ( C) F igure 3. On-R es is tanc e Variation with Temperature 10 -5 2500 3000 BSS138 WE IT R ON 10 VGS = 2.5 V 9 8 150 C 7 6 5 25 C 4 -55 C 3 2 1 0.05 0 0.15 0.1 0.25 0.2 R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S 8 VGS = 2.75 V 7 150 C 6 5 4 25 C 3 2 1 -55 C 0.05 0 150 C 5 4.5 4 3.5 3 25 C 2.5 2 -55 C 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) VGS = 4.5 V 5.5 0.25 4.5 VGS = 10 V 4 150 C 3.5 3 2.5 25 C 2 -55 C 1.5 1 0 0.05 0.1 ID, DRAIN CURRENT (AMPS) 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) F igure 9. On-R es is tanc e vers us Drain C urrent F igure 8. On-R es is tanc e vers us Drain C urrent 1 I D , DIODE CURRENT (AMPS) 0.2 F igure 7. On-R es is tanc e vers us Drain C urrent F igure 6. On-R es is tanc e vers us Drain C urrent 6 0.15 0.1 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 120 100 TJ = 150 C 0.1 25 C -55 C 80 60 Ciss 0.01 40 Coss 20 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 Crss 0 5 10 15 20 VSD, DIODE FORWARD VOLTAGE (VOLTS) F igure 10. B ody Diode F orward Voltage WEITRON http://www.weitron.com.tw F igure 1 1. C apac itanc e 25