VISHAY SI5513DC

Si5513DC
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N Channel
N-Channel
20
P Channel
P-Channel
−20
20
rDS(on) (W)
ID (A)
0.075 @ VGS = 4.5 V
4.2
0.134 @ VGS = 2.5 V
3.1
0.155 @ VGS = −4.5 V
−2.9
0.260 @ VGS = −2.5 V
−2.2
Qg (Typ)
4
3
1206-8 ChipFETr
1
S2
D1
S1
D1
G1
D1
G2
S2
D2
G1
G2
Marking Code
D2
EB XX
Lot Traceability
and Date Code
Part # Code
Bottom View
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Ordering Information: Si5513DC-T1
Si5513DC-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
5 secs
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
Steady State
5 secs
20
Steady State
Unit
−20
V
"12
4.2
3.1
−2.9
3.0
2.2
−2.1
IDM
Continuous Source Current (Diode Conduction)a
P-Channel
10
−2.1
−1.5
1.8
0.9
−1.8
−0.9
2.1
1.1
2.1
1.1
1.1
0.6
1.1
0.6
TJ, Tstg
A
−10
W
−55 to 150
Soldering Recommendations (Peak Temperature)b, c
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
60
90
110
30
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
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Si5513DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body
Zero Gate Voltage Drain Current
On State Drain Currenta
On-State
Drain Source On-State
Drain-Source
On State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
IGSS
IDSS
ID(on)
D( )
rDS(on)
DS( )
gfs
f
VSD
VDS = VGS, ID = 250 mA
N-Ch
0.6
1.5
VDS = VGS, ID = −250 mA
P-Ch
−0.6
−1.5
VDS = 0 V,
V VGS = "12 V
N-Ch
"100
P-Ch
"100
VDS = 20 V, VGS = 0 V
N-Ch
1
VDS = −20 V, VGS = 0 V
P-Ch
−1
VDS = 20 V, VGS = 0 V, TJ = 70_C
N-Ch
5
VDS = − 20 V, VGS = 0 V, TJ = 70_C
P-Ch
VDS w 5 V, VGS = 4.5 V
N-Ch
10
VDS p −5 V, VGS = −4.5 V
P-Ch
−10
V
nA
mA
−5
A
VGS = 4.5 V, ID = 3.1 A
N-Ch
0.065
0.075
VGS = −4.5 V, ID = −2.1 A
P-Ch
0.130
0.155
VGS = 2.5 V, ID = 2.3 A
N-Ch
0.115
0.134
VGS = −2.5 V, ID = −1.7 A
P-Ch
0.215
0.260
VDS = 10 V, ID = 3.1 A
N-Ch
8
VDS = −10 V, ID = −2.1 A
P-Ch
5
IS = 0.9 A, VGS = 0 V
N-Ch
0.8
1.2
IS = −0.9 A, VGS = 0 V
P-Ch
−0.8
−1.2
N-Ch
4
6
6
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate Source Charge
Gate-Source
Qgs
Gate Drain Charge
Gate-Drain
Qgdd
Turn On Delay Time
Turn-On
td(on)
d( )
Rise Time
Turn Off Delay Time
Turn-Off
tr
td(off)
d( ff)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
P-Ch
3
N-Ch
0.6
P-Ch
0.9
N-Ch
1.3
P-Ch
0.6
N-Ch
12
18
P-Ch
13
20
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
N-Ch
35
55
P-Ch
35
55
P-Channel
P
Channel
VDD = −10
10 V,
V RL = 10 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
N-Ch
19
30
P-Ch
25
40
N-Ch
9
15
P-Ch
25
40
IF = 0.9 A, di/dt = 100 A/ms
N-Ch
40
80
IF = −0.9 A, di/dt = 100 A/ms
P-Ch
40
80
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 3.1 A
P-Channel
VDS = −10
10 V
V, VGS = −4.5
45V
V, ID = −2.1
21A
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 71186
S-42138—Rev. F, 15-Nov-04
Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Output Characteristics
Transfer Characteristics
10
10
TC = −55_C
VGS = 5 thru 3 V
25_C
8
I D − Drain Current (A)
I D − Drain Current (A)
8
2.5 V
6
4
2V
2
6
125_C
4
2
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
500
0.20
VGS = 2.5 V
0.10
VGS = 4.5 V
0
6
8
Coss
10
Crss
0
4
ID − Drain Current (A)
8
12
16
20
VDS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
1.6
VDS = 10 V
ID = 3.1 A
VGS = 4.5 V
ID = 3.1 A
4
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
3.5
Ciss
200
0.00
4
3.0
300
100
2
2.5
400
0.05
0
2.0
Capacitance
600
0.25
0.15
1.5
VGS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
1.0
3
2
1
1.2
1.0
0.8
0
0
1
2
3
Qg − Total Gate Charge (nC)
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
4
0.6
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
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Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
10
TJ = 150_C
TJ = 25_C
0.15
ID = 3.1 A
0.10
0.05
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD − Source-to-Drain Voltage (V)
2
Threshold Voltage
4
5
Single Pulse Power
0.4
50
40
0.2
ID = 250 mA
−0.0
Power (W)
V GS(th) Variance (V)
3
VGS − Gate-to-Source Voltage (V)
−0.2
−0.4
30
20
10
−0.6
−50
−25
0
25
50
75
100
125
0
10−4
150
10−3
10−2
TJ − Temperature (_C)
10−1
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
4. Surface Mounted
0.01
10−4
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10−3
1000
3. TJM − TA = PDMZthJA(t)
Single Pulse
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Output Characteristics
10
3.5 V
VGS = 5 thru 4 V
TC = −55_C
8
8
3V
I D − Drain Current (A)
I D − Drain Current (A)
Transfer Characteristics
10
6
2.5 V
4
2V
2
25_C
6
125_C
4
2
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS − Drain-to-Source Voltage (V)
1.0
On-Resistance vs. Drain Current
2.0
2.5
3.0
3.5
4.0
Capacitance
600
0.4
500
VGS = 2.5 V
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
1.5
VGS − Gate-to-Source Voltage (V)
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
0.1
Ciss
400
300
200
Coss
100
0.0
Crss
0
0
2
4
6
ID − Drain Current (A)
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
8
10
0
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
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Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Gate Charge
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 2.1 A
VGS = 4.5 V
ID = 2.1 A
4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
5
3
2
1
0
0.0
1.4
1.2
1.0
0.8
0.5
1.0
1.5
2.0
2.5
0.6
−50
3.0
−25
Qg − Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
10
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
0.35
TJ = 150_C
TJ = 25_C
ID = 2.1 A
0.30
0.25
0.20
0.15
0.10
0.05
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
4
5
50
0.3
40
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
3
Single Pulse Power
0.4
0.1
30
20
0.0
10
−0.1
−0.2
−50
−25
0
25
50
75
TJ − Temperature (_C)
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2
VGS − Gate-to-Source Voltage (V)
100
125
150
0
10−4
10−3
10−2
10−1
1
10
100
600
Time (sec)
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71186.
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
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