TSDF02830YR VISHAY Vishay Semiconductors Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage 6 5 4 Comments VY MOSMIC - MOS Monolithic Integrated Circuit CW 1 WM1 2 3 16980 Electrostatic sensitive device. Observe precautions for handling. Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL • Two differently optimized amplifiers in a single package • Integrated gate protection diodes • Low noise figure, high gain • Typical forward transadmittance of 31 mS resp 28 mS • Partly internal self biasing-network on chip • Superior cross modulation at gain reduction • High AGC-range with soft slope • Main AGC control range from 3 V to 0.5 V • Supply voltage 5 V (3 V to 7 V) • SMD package, reverse pinning Mechanical Data Weight: 6 mg Case: SOT 363R V - Vishay Y - Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001) CW - Calendar Week, is variable for number from 01 to 52 Number of Calendar Week is always indicating place of pin 1 Pinning: 1 = Gate 1 (amplifier 1), 2 = Source, 3 = Drain (amplifier 1), 4 = Drain (amplifier 2), 5 = Gate 2, 6 = Gate 1 (amplifier 2) Applications Low noise gain controlled VHF and UHF input stages, such as in digital and analog TV tuners. AGC 5 C RFC +5 V G2 (common) C VHF in 6 G1 AMP2 D 4 C VHF out +5 V RG1 RFC +5 V C UHF in 1 G1 AMP1 D 3 C UHF out S (common) +5 V RG1 2 16979 Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 1 TSDF02830YR VISHAY Vishay Semiconductors Parts Table Part Marking TSDF02830YR Package WM1 SOT363R Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Tamb ≤ 60 °C Channel temperature Storage temperature range Channel ambient on glass fibre printed board (25 x Symbol Value VDS 8 Unit V ID 25 mA ± IG1/G2SM 10 mA + VG1SM 6 V - VG1SM 1.5 V ± VG2SM 6 V Ptot 200 mW TCh 150 °C Tstg - 55 to + 150 °C RthChA 450 K/W Symbol Value Unit VDS 8 V ID 30 mA ± IG1/G2SM 10 mA + VG1SM 6 V - VG1SM 1.5 V ± VG2SM 6 V 20 x 1.5) mm3 plated with 35 µm Cu Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Tamb ≤ 60 °C Channel temperature Storage temperature range Channel ambient on glass fibre printed board (25 x Ptot 200 mW TCh 150 °C Tstg - 55 to + 150 °C RthChA 450 K/W 20 x 1.5) mm3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Parameter Symbol Min V(BR)DSS 12 Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 10 V Drain - source breakdown voltage Document Number 85164 Rev. 1, 25-Oct-02 Test condition ID = 10 µA, VG1S = VG2S = 0 Typ. Max Unit V www.vishay.com 2 TSDF02830YR VISHAY Vishay Semiconductors Max Unit Gate 1 - source leakage current Parameter + VG1S = 5 V, VG2S = VDS = 0 Test condition Symbol + IG1SS Min Typ. 20 nA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, R G1 = 56 kΩ 17 mA Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage IDSO 8 12 VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF) 0.3 1.0 V VDS = VRG1 = 5 V, RG1 =100 kΩ, ID = 20 µA VG2S(OFF) 0.3 1.2 V Max Unit Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Parameter Symbol Min V(BR)DSS 12 Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 7 10 Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 Drain - source breakdown voltage Test condition ID = 10 µA, VG1S = VG2S = 0 Typ. V V 10 V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 20 nA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, R G1 = 56 kΩ 17 mA Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage IDSO 8 12 VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF) 0.3 1.0 V VDS = VRG1 = 5 V, RG1 = 56 kΩ, ID = 20 µA VG2S(OFF) 0.3 1.2 V Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s | 27 31 35 mS Gate 1 input capacitance Cissg1 1.9 2.3 pF Feedback capacitance Crss 20 fF Output capacitance Coss 0.9 pF GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 33 dB GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 30 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 25 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 6.0 8.0 dB GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz F 1.0 1.5 dB GS = 3.3 mS, G L = 1 mS, BS = BSopt, f = 800 MHz F 1.3 2.0 dB Power gain Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 3 TSDF02830YR VISHAY Vishay Semiconductors Parameter Cross modulation Test condition Symbol Min Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 Typ. Max Unit dBµV 105 dBµV Remark on improving intermodulation behavior: By setting R G1 smaller than 100 kΩ, e.g. 68 kΩ typical value of IDSO will raise and improved intermodulation behavior will be performed. Amplifier 2 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s | 23 28 33 mS Gate 1 input capacitance 3.0 pF Cissg1 2.5 Feedback capacitance Crss 20 fF Output capacitance Coss 0.9 pF GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 32 dB GS = 2 mS, BS = BSopt, GL = 1 mS, B L = BLopt, f = 400 MHz Gps 28 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, B L = BLopt, f = 800 MHz Gps 22 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 4.5 6.0 dB GS = 2 mS, G L = 1 mS, BS = BSopt, f = 400 MHz F 1.0 1.6 dB GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz F 1.5 2.3 dB Power gain Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 dBµV Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 105 dBµV Remark on improving intermodulation behavior: By setting R G1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 4 TSDF02830YR VISHAY Vishay Semiconductors Package Dimensions in mm 14280 Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 5 TSDF02830YR VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 6