RB481Y Diodes Schottky barrier diode RB481Y zApplications z Dimensions (Unit : mm) z Land size figure (Unit : mm) Low current rectification 0.45 0.5 1.6±0.05 1.6±0.1 0.22±0.05 (3) 1.2±0.1 zFeatures 1) Ultra Small power mold type. (EMD4) 2) Low VF 3) High reliability. (1) 1.6±0.1 1.6±0.05 (4) 1.55 0.13±0.05 (2) 0.5 EMD4 0.5 1.0±0.1 zConstruction Silicon epitaxial planar 1.0 0～0.1 0.5±0.05 zStructure ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) z Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.5±0.05 1.65±0.01 φ0.8±0.1 4.0±0.1 0～0.1 1PIN 5.5±0.2 1.65±0.1 1.65±0.1 8.0±0.2 1.75±0.1 4.0±0.1 0.65±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 1 125 -40 to +125 Unit V mA A ℃ ℃ (*1) Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Symbol VF1 VF2 Forward voltage VF3 Reverse current IR Min. - Typ. - Max. 0.28 0.33 0.43 Unit V V V - - 30 µA Conditions IF=1mA IF=10mA IF=100mA VR=10V Rev.C 1/3 RB481Y Diodes zElectrical characteristic curves (Ta=25°C) Ta=125℃ Ta=75℃ 10 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 10000 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 100000 1000 0.1 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 500 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 1 30 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 VF分布 16 50 350 340 330 320 AVE:340.2mV Ta=25℃ VR=10V n=30pcs 45 40 30 14 25 20 15 AVE:14.33pF 13 AVE:4.775uA 10 5 12 0 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 20 10 1cyc Ifsm 15 8.3ms 10 5 AVE:5.60A PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 0 1 10 Ifsm t 5 0 100 1 IFSM DISPERSION MAP 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.5 0.3 Per chip Per chip Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms IF=100mA FORWARD POWER DISSIPATION:Pf(W) 0.4 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 35 310 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ta=25℃ f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:VR(uA) FORWARD VOLTAGE:VF(mV) 360 0.2 D=1/2 Sin(θ＝180) DC 0.1 0.3 DC 0.2 D=1/2 Sin(θ＝180) 0.1 time 300us 10 0.001 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 1000 0 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.5 0 10 20 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS Rev.C 30 2/3 RB481Y Diodes Per diode t 0.4 DC T VR D=t/T VR=15V Tj=125℃ 0.3 D=1/2 0.2 0.1 0.5 Io 0A 0V Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0.5 Io 0A 0V Per diode t 0.4 DC T 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE：Ta(℃) Derating Curve 125 0 25 50 75 100 125 CASE TEMPARATURE：Tc(℃) Derating Curve Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1