JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5172 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.01mA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 5 V Collector cut-off current ICBO VCB=25V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE VCE=10V, IC=10mA DC current gain Collector-emitter saturation voltage Base-emitter voltage www.cj-elec.com VCE(sat) VBE 100 IC=10mA,IB=1mA VCE=10V, IC=10mA 1 0.5 500 0.25 V 1.2 V C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C ,Dec ,2015