High-reliability discrete products and engineering services since 1977 C228, C22803, C229 SERIES SILICON CONTROLLED RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive off state voltage (TJ = -40 to +125°C) C228F, C228F3, C229F C228A, C228A3, C229A C228B, C228B3, C229B C228C, C228C3, C229C C228D, C228D3, C229D C228E, C228E3, C229E C228M, C228M3, C229M Symbol Value Unit (1) VRRM, VDRM Peak non-repetitive reverse voltage (TJ = -40 to +125°C) C228F, C228F3, C229F C228A, C228A3, C229A C228B, C228B3, C229B C228C, C228C3, C229C C228D, C228D3, C229D C228E, C228E3, C229E C228M, C228M3, C229M VRSM Forward current RMS IT(RMS) Peak surge current (one cycle, 60Hz, TC = -40 to +125°C) ITSM Circuit fusing considerations (TC = -40 to +125°C, t = 8.3ms) I2t 50 100 200 300 400 500 600 Volts 75 150 300 400 500 600 720 Volts 35 Amps Amps 300 A2s 370 Peak gate power PGM 5 Watts Average gate power PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C 30 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case C228 and C229 SERIES C228()3 SERIES Symbol Maximum Unit RӨJC 1.70 1.85 °C/W Rev. 20150306 C228, C22803, C229 SERIES SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TC = 25°C TC = 125°C Symbol Min. Typ. Max. Unit - - 10 3 µA mA - - 1.9 - - 40 80 mA VGT - - 2.5 3 Volts VGT 0.2 - - - - 75 150 - 1 - - 20 35 - - 50 - IDRM, IRRM Forward “on” voltage (ITM = 100A peak) VT Gate trigger current (continuous dc) (VD = 12V, RL = 80Ω, T C = 25°C) (VD = 6V, RL = 80Ω, T C = -40°C) IGT Gate trigger voltage (continuous dc) (VD = 12V, RL = 80Ω, T C = 25°C) (VD = 6V, RL = 80Ω, T C = -40°C) Gate trigger voltage (Rated VDRM, RL = 1000Ω, TC = 125°C) Holding current (Anode voltage = 24V, gate open) TC = 25°C TC = -40°C IH Turn-on time (td +tr) (ITM = 35A, IGT = 40mA) ton Turn-off time (ITM = 10A, IR = 10A) (ITM = 10A, IR = 10A, TC = 100°C) toff Forward voltage application rate (TC = 100°C) dv/dt Volts Volts mA µs µs V/µs Rev. 20150306 High-reliability discrete products and engineering services since 1977 C228, C22803, C229 SERIES SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case Digi PF1 (C229 SERIES) Marking Body painted, alpha-numeric DIGI PF1 Inches A Millimeters Min Max Min Max 0.501 0.505 12.730 12.830 F - 0.160 - 4.060 G 0.085 0.095 2.160 2.410 H 0.060 0.070 1.520 1.780 J 0.300 0.350 7.620 8.890 K - 1.050 - 26.670 L - 0.670 - 17.020 Q 0.055 0.085 1.400 2.160 Rev. 20150306 High-reliability discrete products and engineering services since 1977 C228, C22803, C229 SERIES SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 (C228, C228()3 SERIES) Marking Body painted, alpha-numeric Polarity Cathode is stud Rev. 20150306