2N4401 NPN Silicon General Purpose Transistors TO-92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter unless Symbol otherwise Test specified） conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100μA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , 40 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, 6 V IB=0 IC=0 Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V , 0.1 μA DC current gain hFE（1） VCE=1 V, IC= 150m A IC=0 100 300 Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB=15m A 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150 mA, IB=15m A 0.95 V VCE= 10V, IC= 20mA Transition frequency f 250 T f = 100MHz WEITRON http://www.weitron.com.tw MHz 2N4401 WEITRON http://www.weitron.com.tw 2N4401 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50