RFV10N50BE S E M I C O N D U C T O R 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package • 10A, 500V JEDEC STYLE 5 LEAD TO-247 • rDS(ON) = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected • UIS Rating Curve • SOA is Power Dissipation Limited • High Input Impedance Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET, controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the gate drive circuit to avoid voltage induced transients from the output circuit during switching. The RFV10N50BE can be operated directly from integrated circuits. Terminal Diagram D G1 G2 SK PACKAGE AVAILABILITY PART NUMBER RFV10N50BE PACKAGE TO-247 BRAND S V10N50BE NOTE: When ordering use the entire part number. Formerly developmental type TA9881. Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Control FET Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 1 500 +14, -0.3 +14, -0.3 2 UNITS V V V KV 10 25 Refer to UIS Curve 1.5 50 A mJ 156 1.25 W W/oC 21 0.17 -55 to +150 W W/oC oC File Number A A 3377.1 Specifications RFV10N50BE Electrical Specifications Case Temperature (TC) = +25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0V 500 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 0.25mA 2 - 4 V TC = +25oC - - 1 µA TC = +125oC - - 250 µA VGS = +12V, VGS = -0.3V - - ±500 nA ID = 10A, VGS = 10V - - 0.480 Ω VDD = 250V, ID = 10A, RL = 25Ω, VGS1 = VGS2 = +10V, RGS1 = 6.25Ω, RGS2 = 20Ω - - 75 ns - 20 - ns tR - 30 - ns tD(OFF) - 21 - ns tF - 5 - ns Turn-Off Time tOFF - - 50 ns Total Gate Charge QG10 - 145 190 nC Gate Source Charge QGS - 17 22 nC Gate Drain (“Miller”) Charge QGD - 57 74 nC Input Capacitance CISS - 3800 - pF Output Capacitance COSS - 290 - pF Reverse Transfer Capacitance CRSS - 75 - pF Thermal Resistance RθJC Junction to Case - - 0.8 oC/W Thermal Resistance RθJA Junction to Ambient - - 40 oC/W Zero Gate Voltage Drain Current Gate-Source Leakage Current IDSS IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) VDS = 500V, VGS = 0V VGS = 0V to 10V VDD = 400V, ID = 10A, RL = 40Ω VDS = 25V, VGS = 0V, f = 1MHz Control FET Specifications LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Static Drain to Source rDS(ON) VGS = 10V, ID = 1.0A - 1.6 - Ω Drain Source Breakdown Voltage BVDSS ID = 1.0mA, VGS = 0V 14 15 - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 0.25mA 2 - 4 V ID = 1.0A, VGS = 10V - - 5 nC Total Gate Charge QG10 Source-Drain Diode Ratings and Specifications LIMITS PARAMETER MIN TYP MAX UNITS IS - - 10 A Pulsed Source Current ISM - - 25 A Forward Voltage VSD ISD = 10A, VGS = 0V - - 1.4 V Reverse Recovery Time tRR ISD = 10A, VGS = 0V, dISD/dt = 100A/µs - - 750 ns Continuous Source Current SYMBOL TEST CONDITIONS 2 RFV10N50BE Typical Performance Curves CASE TEMPERATURE (TC) = +25oC 50.0 IAS, AVALANCHE CURRENT (A) 30 ID, DRAIN CURRENT (A) 100µs 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100 10 STARTING TJ = +150oC 10.0 IF R = 0 tAV = (L)(IAS)/ (1.3 RATED BVDSS-VDD) IF R ≠ 0 tAV = (L/R) In[(IAS x R)/ (1.3 RATED BVDSS-VDD)+1] DC 100ms 10ms 5.0 0.01 1 1 STARTING TJ = +25oC IDM 1000 0.10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING 1.2 POWER DISSIPATION MULTIPLIER 12 10 ID, DRAIN CURRENT (A) 2.00 tAV, TIME IN AVALANCHE (ms) FIGURE 1. SAFE OPERATING AREA CURVE 8 6 4 2 0 1.0 0.8 0.6 0.4 0.2 0 25 35 45 55 65 75 85 95 105 115 125 135 145 0 25 TC, CASE TEMPERATURE (oC) 20 125 150 VDD = 30V VGS = 6.0V VGS = 5.5V 15 10 100 25 ID(ON), ON-STATE DRAIN CURRENT (A) VGS = 10V 75 FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPERTURE DERATING CURVE PULSE DURATION = 250µs, TC = +25oC 25 50 TC, CASE TEMPERATURE (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE ID, DRAIN CURRENT (A) 1.00 VGS = 5V 5 VGS = 4.5V PULSE TEST PULSE DURATION = 250µs DUTY CYCLE = 0.5% MAX 20 15 +150oC 10 +25oC -40oC 5 0 0 0 2.5 5.0 7.5 10.0 12.5 0 15.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3 10.0 RFV10N50BE Typical Performance Curves (Continued) VGS = VDS, ID = 250µA 2.5 2.0 1.5 1.0 0.5 THRESHOLD VOLTAGE 2.0 VGS(TH), NORMALIZED GATE rDS(ON), NORMALIZED ON-RESISTANCE PULSE DURATION = 250µs, VGS = 10V, ID = 10A 3.0 1.5 1.0 0.5 0 0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 o 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE ID = 250µA VGS = 0V, FREQUENCY (f) = 1MHz 2.0 5000 C, CAPACITANCE (pF) BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 50 o TJ, JUNCTION TEMPERATURE ( C) 1.5 1.0 0.5 4000 CISS 3000 2000 COSS 1000 CRSS 0 -50 -25 0 25 50 75 100 125 0 150 0 TJ, JUNCTION TEMPERATURE (oC) 500 10 8 VDD = BVDSS VDD = BVDSS 300 6 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS 200 4 RL = 50Ω IG(REF) = 3.25mA VGS = 10V 100 2 0 0 20 IG(REF) IG(ACT) t, TIME (µs) VGS , GATE SOURCE VOLTAGE (V) 400 80 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 25 FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE ZθJC, NORMALIZED THERMAL RESPONSE FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE VDS , DRAIN SOURCE VOLTAGE (V) 25 IG(REF) IG(ACT) 10 1 0.1 PD 10-2 10-3 10-5 t1 t2 DUTY CYCLE, D = t1/t2 TJ = PD x ZθJC + TC 10-4 10-3 10-2 0.1 1 10 t, RECTANGULAR PULSE WIDTH (s) FIGURE 11. TYPICAL SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTES AN7254 AND AN7260 FIGURE 12. MAXIMUM NORMALIZED TRANSIENT THERMAL IMPEDANCE 4 RFV10N50BE Test Circuits and Waveforms +10V 90% RL VGS1 <20ns - +10V VGS2 t(ON) VGS2 G2 0 10% 0V + VDD G1 0V 50% VGS1 D tD(ON) tR 0V 90% 50% 10% t(OFF) tD(OFF) RGS1 tF RGS2 VGS1 0V SK VGS2 10% S 90% VDS 90% 10% 0V FIGURE 13. RESISTIVE SWITCHING TEST CIRCUITS FIGURE 14. RESISTIVE SWITCHING WAVEFORMS VDS DUT L RG + - VDD BVDSS tP IAS IL VDS VDD 0.01Ω VGS VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tAV tP FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS 5 RFV10N50BE Packaging E A TO-247 TERM. 6 ØS 5 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE ØP INCHES Q ØR SYMBOL MIN MAX MIN MAX NOTES A 0.180 0.190 4.58 4.82 - D b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 - b1 L1 b2 L c b 1 2 3 4 5 J1 e 5 e 0.110 TYP 2.79 TYP 4 1 e1 0.438 BSC 11.12 BSC 4 BACK VIEW J1 0.090 0.105 2.29 2.66 5 L 0.620 0.640 15.75 16.25 - 4 3 2 e1 TERMINAL CONNECTIONS Lead No. 1 - Gate 1 (G1) Lead No. 2 - Gate 2 (G2) MILLIMETERS - Source Kelvin (SK) Lead No. 5 - Source (S) 0.145 0.155 3.69 3.93 1 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. Lead No. 3 and - Drain (D) Mounting Flange Lead No. 4 L1 ØP All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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