RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model DRAIN (BOTTOM SIDE METAL) • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG60P03 TO-247 RFG60P03 RFP60P03 TO-220AB RFP60P03 RF1S60P03 TO-262AA F1S60P03 RF1S60P03SM TO-263AB F1S60P03 JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) A NOTE: When ordering use the entire part number. Formerly developmental type TA49045. Symbol D JEDEC TO-263AB M A A DRAIN (FLANGE) G GATE SOURCE S Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ , TSTG RFG60P03, RFP60P03, RF1S60P03, RFS60P03SM -30 -30 ±20 60 Refer to Peak Current Curve Refer to UIS Curve A 176 1.17 -55 to +175 W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1995 4-51 UNITS V V V File Number 3951.1 Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Electrical Specifications TC = +25oC, Unless Otherwise Specified. PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V -30 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2 - -4 V TC = +25oC - - -1 µA TC = +150oC - - -50 µA VGS = ±20V - - 100 nA ID = 60A, VGS = -10V - - 0.027 Ω VDD = -15V, ID = 60A RL = 0.25Ω, VGS = -10V RGS = 2.5Ω - - 140 ns - 20 - ns tR - 75 - ns tD(OFF) - 35 - ns tF - 40 - ns tOFF - - 115 ns - 190 230 nC - 100 120 nC Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current VDS = -30V, VGS = 0V IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time tD(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge QG(TOT) VGS = 0 to -20V VDD = -24V, ID = 60A, RL = 0.4Ω Gate Charge at 10V QG(-10) VGS = 0 to -10V Threshold Gate Charge QG(TH) VGS = 0 to -2V - 7.5 9 nC VDS = -25V, VGS = 0V f = 1MHz - 3000 - pF Input Capacitance CISS Output Capacitance COSS - 1500 - pF Reverse Transfer Capacitance CRSS - 525 - pF Thermal Resistance, Junction to Case RθJC - - 0.85 oC/W Thermal Resistance, Junction to Ambient RθJA - - 80 oC/W Source-Drain Diode Ratings and Specifications PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = -60A - - -1.75 V Reverse Recovery Time tRR ISD = -60A, dISD/dt = -100A/µs - - 200 ns 4-52 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves TC = +25oC -500 10 ZθJC, NORMALIZED THERMAL RESPONSE ID , DRAIN CURRENT (A) 100µs -100 1ms 10ms -10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -1 -1 100ms DC 1 0.5 PDM 0.2 0.1 0.05 0.1 t1 t2 0.02 0.01 VDSS MAX = -30V -10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0.01 10-5 -60 SINGLE PULSE 10-4 10-3 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-2 10-1 100 FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = +25oC IDM , PEAK CURRENT CAPABILITY (A) -70 ID , DRAIN CURRENT (A) -60 -50 -40 -30 -20 -10 0 25 50 75 100 125 TC , CASE TEMPERATURE 150 -103 VGS = -20V (oC) VGS = -8V -60 VGS = -7V -30 VGS = -6V VGS = -4.5V 0 0.0 ID(ON), ON STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -10V -90 -1.5 -3.0 -4.5 VGS = -5V -6.0 175 – T C 25 ----------------------150 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-6 10-5 10-4 10-3 10-2 10-1 t , PULSE WIDTH (ms) 100 101 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250µs, TC = +25oC VGS = -20V I = I VGS = -10V -102 -50 175 FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE -120 101 t , RECTANGULAR PULSE DURATION (s) VDD = -15V -120 -55 C -90 VDS , DRAIN-TO-SOURCE VOLTAGE (V) PULSE TEST PULSE DURATION = 250µs DUTY CYCLE = 0.5% MAX +25oC +175oC -60 -30 0 0.0 -7.5 o -2.0 -4.0 -6.0 -8.0 -10.0 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 4-53 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves (Continued) VGS = VDS, ID = - 250µA 2.0 VGS(TH) , NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) BVDSS , NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE POWER DISSIPATION MULTIPLIER 1.5 1.0 0.5 40 80 -40 120 160 0.8 0.6 0.4 0.2 0.0 200 0 FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE 25 VDS , DRAIN-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 4000 CISS 3000 COSS 2000 CRSS 0 VDD = BVDSS 175 -25 VDD = BVDSS -7.5 -22.5 RL = 0.5Ω IG(REF) = -3mA VGS = -10V 0.75 BVDSS 0.75 BV -15.0 -5.0 DSS -7.5 0.0 FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE 150 -10.0 -30.0 VGS = 0V, f = 1MHz -5 -10 -15 -20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS 5000 0 200 1.0 TJ , JUNCTION TEMPERATURE (oC) 1000 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 1.2 ID = -250µA 0 0.5 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE 2.0 -40 1.0 0.0 -80 200 FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 0.0 -80 1.5 20 IG(REF) IG(ACT) 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS t, TIME (µs) 80 -2.5 IG(REF) 0.0 IG(ACT) FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 4-54 VGS , GATE-SOURCE VOLTAGE (V) rDS(ON) , NORMALIZED ON RESISTANCE PULSE DURATION = 250µs, VGS = -10V, ID = -60A 2.0 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Typical Performance Curves (Continued) IAS , AVALANCHE CURRENT (A) -200 STARTING TJ = +25oC -100 STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -10 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS BVDSS tP L VARY tP TO OBTAIN REQUIRED PEAK IAS VDS IAS VDD - DUT RG VDD + 0V tP IL tAV 0.01Ω VGS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF VDD tD(ON) tD(OFF) tF tR RL VDS 10% 10% VDS 90% 0V 90% DUT VGS 10% VGS RGS 50% 50% PULSE WIDTH 90% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-55 RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Temperature Compensated PSPICE Model for the RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM .SUBCKT RFP60P03 2 1 3 REV 6/21/94 CA 12 8 5.01e-9 CB 15 14 3.9e-9 CIN 6 8 3.09e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD ESG 10 EBREAK 5 11 17 18 -36.59 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 DRAIN 2 LDRAIN 5 + RDRAIN + VTO EVTO 18 20 8 EBREAK MOS2 1 9 MOS1 6 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 2.36e-9 RIN S1A 12 DBODY 11 RSOURCE 7 LSOURCE S2A 14 13 13 8 S1B - DBREAK CIN 8 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 17 18 21 + RGATE 16 + - LGATE RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 1e-4 RGATE 9 20 3.25 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 11.28e-3 RVTO 18 19 RVTOMOD 1 8 6 DPLCAP GATE IT 8 17 1 - 13 CA + 6 EGS - 8 15 17 RBREAK S2B 3 SOURCE 18 RVTO CB 14 + 5 EDS - 8 IT 19 VBAT + S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.92 .MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8) .MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12) .MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6) .MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6) .MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 4-56