RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM S E M I C O N D U C T O R 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 45A, 60V SOURCE DRAIN GATE • rDS(ON) = 0.028Ω • Temperature Compensating PSPICE Model DRAIN (BOTTOM SIDE METAL) • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND TO-247 RFG45N06 RFP45N06 TO-220AB RFP45N06 RF1S45N06 TO-262AA F1S45N06 RF1S45N06SM TO-263AB F1S45N06 JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) A RFG45N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A. Formerly developmental type TA49028. Symbol JEDEC TO-263AB D M A A DRAIN (FLANGE) GATE SOURCE G S Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IAM Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ RFG45N06, RFP45N06 RF1S45N06, RF1S45N06SM 60 60 ±20 45 Refer to Peak Current Curve Refer to UIS Curve 125 A 131 0.877 -55 to +175 W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1995 3-33 UNITS V V V File Number A 3574.2 Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V TC = +25oC - - 1 µA TC = +150oC - - 50 µA VGS = ±20V - - 100 nA ID = 45A, VGS = 10V - - 0.028 Ω VDD = 30V, ID = 45A RL = 0.667Ω, VGS = +10V RGS = 3.6Ω - - 120 ns - 12 - ns tR - 74 - ns tD(OFF) - 37 - ns tF - 16 - ns tOFF - - 80 ns - 125 150 nC - 67 80 nC Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time tD(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge VDS = 60V, VGS = 0V QG(TOT) VGS = 0 to 20V VDD = 48V, ID = 45A, RL = 1.07Ω Gate Charge at 10V QG(10) VGS = 0 to 10V Threshold Gate Charge QG(TH) VGS = 0 to 2V - 3.7 4.5 nC VDS = 25V, VGS = 0V f = 1MHz - 2050 - pF Input Capacitance CISS Output Capacitance COSS - 600 - pF Reverse Transfer Capacitance CRSS - 200 - pF Thermal Resistance Junction to Case RθJC - - 1.14 oC/W Thermal Resistance Junction to Ambient RθJA - - 80 oC/W Source-Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = 45A - - 1.5 V Reverse Recovery Time tRR ISD = 45A, dISD/dt = 100A/µs - - 125 ns 3-34 RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Typical Performance Curves TC = +25oC 10 ZθJC, NORMALIZED THERMAL RESPONSE ID , DRAIN CURRENT (A) 400 100 100µs 1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS MAX = 60V 100ms DC 10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0.5 PDM 0.2 0.1 0.1 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC SINGLE PULSE 0.01 -5 10-4 10-3 10 1 1 1 100 10-2 10-1 FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = +25oC IDM , PEAK CURRENT CAPABILITY (A) ID , DRAIN CURRENT (A) 50 40 30 20 10 0 50 75 100 125 TC , CASE TEMPERATURE 150 103 VGS = 20V ID(ON) , ON STATE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 8V 100 VGS = 7V 75 50 VGS = 6V 25 VGS = 5V VGS = 4.5V 0 0.0 1.5 3.0 4.5 6.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 175 – T C 25 ----------------------150 102 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-3 10-2 10-1 100 101 102 t, PULSE WIDTH (ms) 103 104 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250µs, TC = +25oC VGS = 10V I = I VGS = 10V 40 175 (oC) FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 125 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 1. SAFE- OPERATING AREA CURVE 25 100 VDD = 15V 125 PULSE TEST PULSE DURATION = 250µs DUTY CYCLE = 0.5% MAX 100 +175oC 75 50 25 0 0.0 7.5 +25oC -55oC 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3-35 RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM (Continued) PULSE DURATION = 250µs, VGS = 10V, ID = 45A 2.0 1.5 1.0 0.5 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 VGS = VDS, ID = 250µA 2.0 VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE 2.5 0.0 -80 200 -40 TJ, JUNCTION TEMPERATURE (oC) ID = 250µA 80 120 160 200 1.2 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 0.0 0.0 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE 160 0 200 VDS, DRAIN SOURCE VOLTAGE (V) 2000 COSS 1000 CRSS 0 10 15 20 125 150 175 (oC) 10 VDD = BVDSS VDD = BVDSS 7.5 45 5.0 30 15 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.50 BVDSS 0.25 BVDSS 2.5 RL = 1.33Ω IG(REF) = 1.5mA VGS = 10V 0 0 25 20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE 100 60 CISS 5 75 FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE 3000 0 50 TC , CASE TEMPERATURE VGS = 0V, f = 1MHz 4000 25 (oC) FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE C, CAPACITANCE (pF) 40 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE POWER DISSIPATION MULTIPLIER BREAKDOWN VOLTAGE BVDSS, NORMALIZED DRAIN-TO-SOURCE FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 2.0 0 TJ, JUNCTION TEMPERATURE (oC) IG(REF) IG(ACT) t, TIME (µs) 80 IG(REF) IG(ACT) FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 3-36 VGS, GATE-SOURCE VOLTAGE (V) rDS(ON), NORMALIZED ON RESISTANCE Typical Performance Curves RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Typical Performance Curves (Continued) IAS, AVALANCHE CURRENT (A) 300 100 10 STARTING TJ = +25oC STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS RG + DUT - VGS tP 0V IL tAV 0.01Ω FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON tOFF tD(ON) VDD tD(OFF) tR VDS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT tF 90% RL 90% VDS VGS 10% 10% DUT 0V 90% 50% VGS RGS 50% PULSE WIDTH 10% FIGURE 16. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT 3-37 VDD RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Temperature Compensated PSPICE Model for the RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM .SUBCKT RFP45N06 2 1 3 REV 1/18/93 *NOM TEMP = +25oC CA 12 8 3.49E-9 CB 15 14 3.8E-9 CIN 6 8 2E-9 DPLCAP ESG + DBREAK EVTO 9 1 LGATE 20 + GATE RGATE 18 8 - VTO 16 MOS1 RIN 12 13 8 S1B + EGS 6 - 8 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 17 EBREAK 18 RSOURCE + 7 LSOURCE S2A 14 13 15 17 RBREAK S2B 13 CA 11 CIN 8 IT 8 17 1 DBODY MOS2 21 6 S1A LDRAIN 2 5 1E-9 LGATE 1 9 5.65E-9 LSOURCE 3 7 4.13E-9 RDRAIN 6 8 + DBODY 7 5 DBDMOD DBREAK 5 11DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 66.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 DRAIN 2 LDRAIN 5 10 3 SOURCE 18 RVTO CB 14 + 5 EDS 8 - IT 19 - VBAT + RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 3.58E-3 RGATE 9 20 0.681 RIN 6 8 1E9 RSOURCE 8 7 RDSMOD 13.6E-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.92 .MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8) .MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5) .MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10) .MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7) .MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5) .MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 3-38