V23990 K242 A D3 14

V23990-K242-A-PM
MiniSKiiP® 3 PIM
600V/75A
MiniSkiip® 3 housing
Features
● IGBT3 technology for low saturation losses
● Solderless spring contact mounting system
Target Applications
Schematic
● Industrial motor drives
Types
● V23990-K242-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
69
93
A
700
A
2450
A2s
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
VRRM
DC forward current
IFAV
Surge forward current
IFSM
I2t-value
I2t
Power dissipation per Diode
Ptot
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
Tc=80°C
tp=10ms
Tj=25°C
Tj=Tjmax
Th=80°C
77
Tc=80°C
117
W
Tjmax
150
°C
VCE
600
V
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
ICpulse
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Copyright by Vincotech
Th=80°C
Tc=80°C
tp limited by Tjmax
VCE ≤ 1200V, Tj ≤ Top max
Turn off safe operating area
Maximum Junction Temperature
Tj=Tjmax
Tj=Tjmax
Tj≤150°C
VGE=15V
Tjmax
1
70
92
225
225
Th=80°C
Tc=80°C
126
191
A
A
A
W
±20
V
6
360
µs
V
175
°C
Revision: 3.1
V23990-K242-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
55
72
A
D1,D2,D3,D4,D5,D6,D7
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=25°C
Th=80°C
Tj=Tjmax
Tc=80°C
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
45
Th=80°C
Tc=80°C
79
120
A
W
Tjmax
175
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+125
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Maximum Junction Temperature
Thermal Properties
Insulation Properties
Insulation voltage
Copyright by Vincotech
Vis
t=2s
DC voltage
2
Revision: 3.1
V23990-K242-A-PM
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,02
0,94
0,88
0,75
4
6
1,35
D8,D9,D10,D11,D12,D13
Forward voltage
VF
35
Threshold voltage (for power loss calc. only)
Vto
35
Slope resistance (for power loss calc. only)
rt
35
Reverse current
Ir
Thermal resistance chip to heatsink per chip
1500
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
VGE(th)
VCE=VGE
V
V
mΩ
0,1
2
0,90
mA
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
VCE(sat)
15
ICES
0
Gate-emitter leakage current
IGES
Integrated Gate resistor
Rgint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
75
612
0
±25
tr
td(off)
tf
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
RthJH
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,54
1,75
0,1
650
Rgoff=8 Ω
Rgon=8 Ω
±15
300
75
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
V
mA
nA
Ω
4
td(on)
Turn-on energy loss per pulse
Thermal resistance chip to heatsink per chip
0,0012
217
223
27
30
266
290
55
81
1,58
2,07
1,79
2,24
ns
mWs
4700
f=1MHz
25
0
Tj=25°C
pF
300
145
±15
Tj=25°C
Thermal grease
thickness≤50um
λ = 1 W/mK
470
nC
0,75
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
75
Rgoff=8 Ω
300
di(rec)max
/dt
Erec
RthJH
75
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
Thermal grease
thickness≤50um
λ = 1 W/mK
1,54
1,6
63,45
74,57
58,2
262,4
3,74
6,47
3216
2350
0,74
1,33
2,6
V
A
ns
µC
A/µs
mWs
1,2
K/W
1000
Ω
Thermistor
Rated resistance
R
Deviation of R100
∆R/R
R100
T=25°C
R100=1670 Ω
T=100°C
T=100°C
P
-3
3
mW/K
A-value
B(25/50) Tol. %
T=25°C
7,635*10-3
B-value
B(25/100) Tol. %
T=25°C
1,731*10-5
Vincotech NTC Reference
Copyright by Vincotech
Ω
1670,313
T=25°C
Power dissipation constant
%
1/K
1/K²
E
3
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 1
Typical output characteristics
IC = f(VCE)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
IC = f(VCE)
IC (A)
225
IC (A)
225
188
188
150
150
113
113
75
75
38
38
0
0
0
At
tp =
Tj =
VGE from
1
2
3
V CE (V)
4
5
0
At
tp =
Tj =
VGE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 3
Typical transfer characteristics
IC = f(VGE)
1
2
3
5
250
µs
125
°C
7 V to 17 V in steps of 1 V
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 4
Typical diode forward current as
a function of forward voltage
IF = f(VF)
225
IC (A)
IF (A)
75
V CE (V)
4
Tj = 25°C
188
60
150
45
Tj = Tjmax-25°C
113
Tj = 25°C
30
75
15
Tj = Tjmax-25°C
38
0
0
0
2
4
At
tp =
VCE =
250
10
µs
V
Copyright by Vincotech
6
8
10
V GE (V)
12
0
At
tp =
4
1
1
250
µs
2
2
3
V F (V)
3
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 5
Typical switching energy losses
as a function of collector current
E = f(IC)
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(RG)
6,0
E (mWs)
E (mWs)
6,0
T1,T2,T3,T4,T5,T6,T7 IGBT
5,0
Eon High T
5,0
Eon High T
Eon Low T
4,0
4,0
Eoff High T
Eon Low T
3,0
Eoff High T
3,0
Eoff Low T
Eoff Low T
2,0
2,0
1,0
1,0
0,0
0,0
0
30
60
90
120
I C (A)
150
0
With an inductive load at
Tj =
°C
25/125
VCE =
300
V
VGE =
±15
V
Rgon =
8
Ω
Rgoff =
8
Ω
8
16
24
32
RG( Ω )
40
With an inductive load at
Tj =
°C
25/125
VCE =
300
V
VGE =
±15
V
IC =
75
A
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 7
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
E (mWs)
2
E (mWs)
2
T1,T2,T3,T4,T5,T6,T7 IGBT
Erec
1,6
Tj = Tjmax -25°C
1,6
Tj = Tjmax -25°C
1,2
1,2
Erec
Erec
0,8
0,8
Tj = 25°C
Tj = 25°C
Erec
0,4
0,4
0
0
0
30
60
90
120
I C (A)
150
0
With an inductive load at
Tj =
°C
25/125
VCE =
300
V
VGE =
±15
V
Rgon =
8
Ω
Copyright by Vincotech
8
16
24
32
RG( Ω )
40
With an inductive load at
Tj =
°C
25/125
VCE =
300
V
VGE =
±15
V
IC =
75
A
5
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
T1,T2,T3,T4,T5,T6,T7 IGBT
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(RG)
t ( µs)
1
tdoff
1
tdoff
t ( µs)
Figure 9
Typical switching times as a
function of collector current
t = f(IC)
tdon
tdon
tf
0,1
0,1
tr
tr
tf
0,01
0,01
0,001
0,001
0
30
60
90
120
I C (A)
150
0
With an inductive load at
Tj =
125
°C
VCE =
300
V
VGE =
±15
V
Rgon =
8
Ω
Rgoff =
8
Ω
8
16
24
32
RG( Ω )
40
With an inductive load at
Tj =
125
°C
VCE =
300
V
VGE =
±15
V
IC =
75
A
Figure 11
Typical reverse recovery time as a
function of collector current
trr = f(IC)
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon)
0,4
trr
t rr( µs)
t rr( µs)
0,4
D1,D2,D3,D4,D5,D6,D7 FWD
trr
0,3
0,3
Tj = Tjmax -25°C
trr
0,2
0,2
trr
Tj = Tjmax -25°C
0,2
0,2
0,1
0,1
Tj = 25°C
Tj = 25°C
0,0
0,0
0
At
Tj =
VCE =
VGE =
Rgon =
30
25/125
300
±15
8
60
90
120
I C (A)
150
°C
V
V
Ω
Copyright by Vincotech
6
0
8
At
Tj =
VR =
IF =
VGE =
25/125
300
75
±15
16
24
32
R g on ( Ω )
40
°C
V
A
V
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon)
10
D1,D2,D3,D4,D5,D6,D7 FWD
10
Qrr( µC)
Qrr( µC)
Qrr
8
8
Tj = Tjmax -25°C
6
Qrr
6
Qrr
Tj = 25°C
Tj = Tjmax -25°C
4
4
Qrr
2
2
Tj = 25°C
0
0
At 0
At
Tj =
VCE =
VGE =
Rgon =
30
25/125
300
±15
8
60
90
120
I C (A)
°C
V
V
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
0
8
At
Tj =
VR =
IF =
VGE =
25/125
300
75
±15
150
D1,D2,D3,D4,D5,D6,D7 FWD
16
24
32
R g on ( Ω)
40
°C
V
A
V
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon)
D1,D2,D3,D4,D5,D6,D7 FWD
120
IrrM (A)
IrrM (A)
100
Tj = Tjmax -25°C
Tj = Tjmax - 25°C
80
90
Tj = 25°C
60
Tj = 25°C
IRRM
IRRM
60
40
IRRM
IRRM
30
20
0
0
0
30
At
Tj =
VCE =
VGE =
Rgon =
25/125
300
±15
8
60
90
120
I C (A)
0
150
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
Copyright by Vincotech
7
8
25/125
300
75
±15
16
24
32
R gon ( Ω )
40
°C
V
A
V
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
4000
direc / dt (A/ µs)
direc / dt (A/µ s)
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
dI0/dt
dIrec/dt
dIrec/dtLow T
3200
D1,D2,D3,D4,D5,D6,D7 FWD
6000
dI0/dt
dIrec/dt
4500
2400
dIo/dtLow T
dIrec/dtHigh T
3000
1600
di0/dtHigh T
1500
800
0
0
0
At
Tj =
VCE =
VGE =
Rgon =
30
25/125
300
±15
8
60
90
I C (A)
120
150
0
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
8
25/125
300
75
±15
16
24
32
R gon ( Ω )
40
°C
V
A
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
D1,D2,D3,D4,D5,D6,D7 FWD
ZthJH (K/W)
Zth-JH (K/W)
101
100
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
At
D=
RthJH =
10-4
10-3
10-2
10-1
100
t p (s)
t p (s)
10110
At
D=
RthJH =
tp / T
0,75
K/W
10
tp / T
1,20
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,02
0,12
0,41
0,14
0,04
0,02
R (C/W)
0,02
0,19
0,54
0,27
0,11
0,07
Tau (s)
9,4E+00
1,1E+00
2,1E-01
4,0E-02
6,3E-03
4,0E-04
Copyright by Vincotech
K/W
8
Tau (s)
9,9E+00
1,0E+00
1,8E-01
3,4E-02
6,0E-03
6,5E-04
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 21
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 22
Collector current as a
function of heatsink temperature
IC = f(Th)
120
IC (A)
Ptot (W)
240
200
100
160
80
120
60
80
40
40
20
0
0
0
At
Tj =
50
100
150
T h ( o C)
200
0
At
Tj =
VGE =
°C
175
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 23
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
50
175
15
100
T h ( o C)
200
°C
V
Output inverter FWD
Figure 24
Forward current as a
function of heatsink temperature
IF = f(Th)
100
IF (A)
Ptot (W)
150
150
120
80
90
60
60
40
30
20
0
0
0
At
Tj =
50
175
100
150
T h ( o C) 200
0
At
Tj =
°C
Copyright by Vincotech
9
50
175
100
150
T h ( o C)
200
°C
Revision: 3.1
V23990-K242-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
Gate voltage vs Gate charge
VGE = f(QGE)
3
1mS
10mS
VGE (V)
15
IC (A)
10
T1,T2,T3,T4,T5,T6,T7 IGBT
100uS
120V
100mS
DC
12
102
480V
9
101
6
10
0
3
0
10-1 0
10
At
D=
Th =
VGE =
Tj =
10
1
10
2
V CE (V)
10
0
3
80
120
160
200
240
Q g (nC)
At
IC =
single pulse
80
ºC
±15
V
Tjmax
ºC
Copyright by Vincotech
40
10
75
A
Revision: 3.1
V23990-K242-A-PM
D8,D9,D10,D11,D12,D13
Figure 1
Typical diode forward current as
a function of forward voltage
IF= f(VF)
D8,D9,D10,D11,D12,D13 diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
150
Tj = 25°C
Tj = Tjmax-25°C
120
1
ZthJC (K/W)
IF (A)
10
D8,D9,D10,D11,D12,D13 diode
10
0
10
-1
10
-2
90
60
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
30
0
0,0
0,4
0,8
1,2
1,6
V F (V)
2,0
10-5
At
tp =
At
D=
RthJH =
µs
250
Figure 3
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
D8,D9,D10,D11,D12,D13 diode
10-3
10-2
10-1
100
t p (s)
10110
tp / T
0,90
K/W
Figure 4
Forward current as a
function of heatsink temperature
IF = f(Th)
D8,D9,D10,D11,D12,D13 diode
120
Ptot (W)
IF (A)
180
150
100
120
80
90
60
60
40
30
20
0
0
0
At
Tj =
10-4
30
150
60
90
120
T h ( o C)
150
0
At
Tj =
ºC
Copyright by Vincotech
11
30
150
60
90
120
T h ( o C) 150
ºC
Revision: 3.1
V23990-K242-A-PM
Thermistor
Thermistor
Figure 1
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
R/Ω
2000
1800
1600
1400
1200
1000
25
50
Copyright by Vincotech
75
100
T (°C)
125
12
Revision: 3.1
V23990-K242-A-PM
Switching Definitions Output Inverter
General conditions
Tj
= 125 °C
Rgon
= 8Ω
Rgoff
= 8Ω
Output inverter IGBT
Figure 1
Output inverter IGBT
Figure 2
Turn-off Switching Waveforms & definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon
(tEon = integrating time for Eon)
120
210
%
%
IC
180
tdoff
100
VCE
VGE 90%
VCE 90%
150
80
120
IC
60
VCE
90
VGE
tdon
tEoff
60
40
30
IC 1%
20
0
-0,2
IC10%
VGE10%
VGE
VCE 3%
tEon
0
-30
-0,05
0,1
0,25
0,4
0,55
0,7
2,6
time (us)
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdoff =
tEoff =
-15
15
300
75
0,29
0,53
2,75
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdon =
tEon =
V
V
V
A
µs
µs
Output inverter IGBT
Figure 3
2,9
3,05
-15
15
300
75
0,22
0,47
V
V
V
A
µs
µs
3,2
time(us)
3,5
Output inverter IGBT
Figure 4
Turn-off Switching Waveforms & definition of tf
3,35
Turn-on Switching Waveforms & definition of tr
120
210
fitted
%
%
IC
100
Ic
180
VCE
IC 90%
150
80
120
VCE
IC 60%
60
IC90%
90
40
tr
IC 40%
60
20
30
IC10%
0
-20
0,15
VC (100%) =
IC (100%) =
tf =
IC10%
0
tf
-30
0,2
0,25
300
75
0,08
Copyright by Vincotech
0,3
0,35
0,4
0,45
time (us)
2,9
0,5
3
3,1
3,2
3,3
time(us)
VC (100%) =
IC (100%) =
tr =
V
A
µs
13
300
75
0,03
V
A
µs
Revision: 3.1
V23990-K242-A-PM
Switching Definitions Output Inverter
Output inverter IGBT
Figure 5
Output inverter IGBT
Figure 6
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
150
%
Poff
Pon
%
Eoff
100
120
Eon
80
90
60
60
40
30
20
VGE 10%
VCE 3%
0
0
VGE 90%
-20
-0,2
IC 1%
tEoff
-0,05
0,1
0,25
tEon
-30
0,4
0,55
2,7
0,7
2,8
2,9
3
3,1
3,2
Poff (100%) =
Eoff (100%) =
tEoff =
22,50
2,24
0,53
3,3
3,4
time(us)
time (us)
Pon (100%) =
Eon (100%) =
tEon =
kW
mJ
µs
22,50
2,07
0,47
kW
mJ
µs
Output inverter FWD
Figure 7
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
Vd
fitted
0
IRRM10%
-40
-80
IRRM90%
IRRM100%
-120
2,95
3,05
3,15
3,25
3,35
time(us)
Vd (100%) =
Id (100%) =
IRRM (100%) =
trr =
Copyright by Vincotech
14
300
75
75
0,26
V
A
A
µs
Revision: 3.1
V23990-K242-A-PM
Switching Definitions Output Inverter
Output inverter FWD
Figure 8
Output inverter FWD
Figure 9
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec)
110
120
%
%
Id
Qrr
80
Erec
100
80
50
tQrr
20
60
-10
40
-40
20
-70
0
tErec
Prec
-20
-100
2,9
3,1
3,3
3,5
2,9
3,7
3,1
3,3
Id (100%) =
Qrr (100%) =
tQrr =
75
6,47
0,60
Copyright by Vincotech
3,5
3,7
time(us)
time(us)
Prec (100%) =
Erec (100%) =
tErec =
A
µC
µs
15
22,50
1,33
0,60
kW
mJ
µs
Revision: 3.1
V23990-K242-A-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
with std lid (black V23990-K32-T-PM)
with std lid (black V23990-K32-T-PM) and P12
with thin lid (white V23990-K33-T-PM)
with thin lid (white V23990-K33-T-PM) and P12
Ordering Code
in DataMatrix as
V23990-K242-A-/0A/-PM
V23990-K242-A-/1A/-PM
V23990-K242-A-/0B/-PM
V23990-K242-A-/1B/-PM
K242A
K242A
K242A
K242A
in packaging barcode as
K242A-/0A/
K242A-/1A/
K242A-/0B/
K242A-/1B/
Outline
Pinout
Copyright by Vincotech
16
Revision: 3.1
V23990-K242-A-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
17
Revision: 3.1