V23990 K218 F D3 14

V23990-K218-F-PM
MiniSKiiP® 1 PACK
1200V/8A
MiniSKiiP® 1 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT3 technology
Target Applications
Schematic
● Servo Drives
● Industrial Motor Drives
● UPS
Types
● V23990-K218-F-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
16
A
tp limited by Tjmax
24
A
VCE≤1200V, Tj≤Topmax
24
A
46
W
±20
V
10
≤1200
µs
V
Tjmax
150
°C
VRRM
1200
V
12
A
55
A
28
W
150
°C
T1,T2,T3,T4,T5,T6
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
VCE
IC
ICpulse
Turn off safe operating area
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
Tj=Tjmax
Tj=Tjmax
Th=80°C
Th=80°C
Tj≤150°C
VGE=15V
D1,D2,D3,D4,D5,D6
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright Vincotech
Tjmax
1
Th=80°C
Th=80°C
Revision: 3
V23990-K218-F-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
copyright Vincotech
Vis
t=2s
DC voltage
2
Revision: 3
V23990-K218-F-PM
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Unit
Min
Typ
Max
5
5,8
6,5
1,35
1,65
1,80
2,05
T1,T2,T3,T4,T5,T6
Gate emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off current incl. diode
ICES
0
600
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
VCE=VGE
0,0005
8
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
0,05
120
Rgoff=81 Ω
Rgon=81 Ω
±15
600
8
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
mA
nA
Ω
-
tr
td(off)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
45
25
ns
410
207
0,90
mWs
0,92
605
f=1MHz
25
0
pF
37
Tj=25°C
29
960
±15
8
Tj=25°C
Thermal grease
thickness≤50µm
λ=1W/mK
53
nC
1,5
K/W
D1,D2,D3,D4,D5,D6
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
5
Rgoff=81 Ω
600
0
di(rec)max
/dt
Erec
RthJH
8
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,52
1,51
1,77
A
9
ns
603
µC
1,82
A/µs
74
mWs
0,76
Thermal grease
thickness≤50µm
λ=1W/mK
V
2,5
K/W
1000
Ω
Thermistor
Rated resistance
R
Deviation of R100
∆R/R
T=25°C
R100=1670 Ω
T=100°C
-3
3
%
T=100°C
1670,313
Ω
A-value
B(25/50) Tol. %
T=25°C
7,635*10-3
1/K
B-value
B(25/100) Tol. %
T=25°C
1,731*10-5
1/K²
R100
R
Vincotech PTC Reference
copyright Vincotech
E
3
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 1
Typical output characteristics
IC = f(VCE)
T1,T2,T3,T4,T5,T6 IGBT
Figure 2
Typical output characteristics
IC = f(VCE)
20
IC (A)
IC (A)
20
16
16
12
12
8
8
4
4
0
0
0
At
tp =
Tj =
VGE from
1
2
3
4
V CE (V)
5
0
At
tp =
Tj =
VGE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6 IGBT
Figure 3
Typical transfer characteristics
IC = f(VGE)
1
2
3
V CE (V)
5
250
µs
125
°C
7 V to 17 V in steps of 1 V
D1,D2,D3,D4,D5,D6 FWD
Figure 4
Typical diode forward current as
a function of forward voltage
IF = f(VF)
30
IF (A)
IC (A)
10
4
25
8
Tj = 25°C
20
6
15
Tj = Tjmax-25°C
4
10
Tj = Tjmax-25°C
2
5
Tj = 25°C
0
0
0
At
tp =
VCE =
2
250
10
copyright Vincotech
4
6
8
V GE (V)
10
0
At
tp =
µs
V
4
0,5
1
250
µs
1,5
2
2,5
V F (V)
3
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
T1,T2,T3,T4,T5,T6 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(RG)
E (mWs)
E (mWs)
Figure 5
Typical switching energy losses
as a function of collector current
E = f(IC)
2
Eon High T
2
Eoff High T
1,5
1,5
Eon High T
1
1
Eoff High T
0,5
0,5
0
0
0
3
6
9
12
I C (A)
0
15
With an inductive load at
Tj =
°C
125
VCE =
600
V
VGE =
±15
V
Rgon =
Ω
81
Rgoff =
81
Ω
80
120
160
RG( Ω )
200
With an inductive load at
Tj =
°C
125
VCE =
600
V
VGE =
±15
V
IC =
8
A
T1,T2,T3,T4,T5,T6 IGBT
Figure 7
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
T1,T2,T3,T4,T5,T6 IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1
E (mWs)
E (mWs)
40
Erec
0,8
1
0,8
Erec
0,6
0,6
0,4
0,4
0,2
0,2
0
0
0
3
6
9
12
I C (A)
15
0
With an inductive load at
Tj =
125
°C
VCE =
600
V
VGE =
±15
V
Rgon =
81
Ω
copyright Vincotech
40
80
120
160
R G ( Ω ) 200
With an inductive load at
Tj =
125
°C
VCE =
600
V
VGE =
±15
V
IC =
8
A
5
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 9
Typical switching times as a
function of collector current
t = f(IC)
T1,T2,T3,T4,T5,T6 IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(RG)
1
t ( µs)
t ( µs)
1
tdoff
tdoff
tf
tf
0,1
0,1
tdon
tdon
tr
tr
0,01
0,01
0,001
0,001
0
3
6
9
12
I C (A)
15
0
With an inductive load at
Tj =
125
°C
VCE =
600
V
VGE =
±15
V
Rgon =
Ω
81
Rgoff =
81
Ω
40
80
120
160
RG( Ω )
200
With an inductive load at
Tj =
125
°C
VCE =
600
V
VGE =
±15
V
IC =
8
A
D1,D2,D3,D4,D5,D6 FWD
Figure 11
Typical reverse recovery time as a
function of collector current
trr = f(IC)
D1,D2,D3,D4,D5,D6 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon)
0,8
0,8
t rr( µs)
t rr( µs)
trr
trr
0,6
0,6
0,4
0,4
0,2
0,2
0
0
0
0
At
Tj =
VCE =
VGE =
Rgon =
3
125
600
±15
81
copyright Vincotech
6
9
12
I C (A)
40
80
15
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
6
125
600
8
±15
120
160
R g on ( Ω )
200
°C
V
A
V
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
D1,D2,D3,D4,D5,D6 FWD
Figure 13
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
D1,D2,D3,D4,D5,D6 FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon)
2,5
Qrr( µC)
Qrr( µC)
2,5
Qrr
2
2
Qrr
1,5
1,5
1
1
0,5
0,5
0
0
At
At
Tj =
VCE =
VGE =
Rgon =
0
3
125
600
±15
81
6
9
12
I C (A)
15
0
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
D1,D2,D3,D4,D5,D6 FWD
Figure 15
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
40
125
600
8
±15
80
120
R g on ( Ω) 200
°C
V
A
V
D1,D2,D3,D4,D5,D6 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon)
12
160
IrrM (A)
IrrM (A)
12
IRRM
9
9
6
6
3
3
0
IRRM
0
0
At
Tj =
VCE =
VGE =
Rgon =
3
125
600
±15
81
copyright Vincotech
6
9
12
I C (A)
15
0
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
7
40
125
600
8
±15
80
120
160
R gon ( Ω ) 200
°C
V
A
V
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
D1,D2,D3,D4,D5,D6 FWD
D1,D2,D3,D4,D5,D6 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
500
direc / dt (A/ µs)
direc / dt (A/µ s)
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
dI0/dt
dIrec/dt
400
500
dI0/dt
dIrec/dt
400
di0/dtHigh T
300
300
200
200
100
100
dIrec/dtHigh T
0
0
0
At
Tj =
VCE =
VGE =
Rgon =
3
125
600
±15
81
6
9
I C (A)
12
15
0
At
Tj =
VR =
IF =
VGE =
°C
V
V
Ω
T1,T2,T3,T4,T5,T6 IGBT
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
125
600
8
±15
80
120
R gon ( Ω )
160
200
°C
V
A
V
D1,D2,D3,D4,D5,D6 FWD
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
Zth-JH (K/W)
101
ZthJH (K/W)
101
100
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10
40
-2
10-5
At
D=
RthJH =
10-4
10-3
10-2
10-1
100
t p (s)
-1
10
-2
10-5
10110
At
D=
RthJH =
tp / T
1,5
10
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-4
10-3
R (C/W)
0,06
0,18
0,56
0,46
0,19
0,10
R (C/W)
0,05
0,25
0,88
0,73
0,33
0,26
8
100
t p (s)
101 10
K/W
FWD thermal model values
copyright Vincotech
10-1
tp / T
2,5
IGBT thermal model values
Tau (s)
1,0E+01
5,8E-01
9,9E-02
1,8E-02
2,8E-03
2,9E-04
10-2
Tau (s)
9,0E+00
6,6E-01
1,2E-01
2,9E-02
4,8E-03
6,9E-04
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 21
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
T1,T2,T3,T4,T5,T6 IGBT
Figure 22
Collector current as a
function of heatsink temperature
IC = f(Th)
25
IC (A)
Ptot (W)
120
20
90
15
60
10
30
5
0
0
0
At
Tj =
30
150
60
90
120
T h ( o C)
150
0
At
Tj =
VGE =
°C
D1,D2,D3,D4,D5,D6 FWD
Figure 23
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
30
150
15
60
90
T h ( o C)
150
°C
V
D1,D2,D3,D4,D5,D6 FWD
Figure 24
Forward current as a
function of heatsink temperature
IF = f(Th)
25
IF (A)
Ptot (W)
60
120
20
45
15
30
10
15
5
0
0
0
At
Tj =
30
150
copyright Vincotech
60
90
120
T h ( o C)
150
0
At
Tj =
°C
9
30
150
60
90
120
T h ( o C)
150
°C
Revision: 3
V23990-K218-F-PM
T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6
T1,T2,T3,T4,T5,T6 IGBT
Figure 25
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE)
T1,T2,T3,T4,T5,T6 IGBT
Figure 26
Gate voltage vs Gate charge
VGE = f(QGE)
102
IC (A)
VGE (V)
20
17,5
240V
100uS
101
15
960V
12,5
1mS
10
100
10mS
7,5
5
100mS
10
-1
DC
2,5
0
100
At
D=
Th =
VGE =
Tj =
101
102
103
0
12,5
25
V CE (V)
37,5
50
62,5
75
Q g (nC)
At
IC =
single pulse
80
ºC
±15
V
Tjmax
ºC
8
A
Thermistor
Thermistor
Figure 1
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
R/Ω
2000
1800
1600
1400
1200
1000
25
copyright Vincotech
50
75
100
T (°C)
125
10
Revision: 3
V23990-K218-F-PM
Switching Definitions Output Inverter
General conditions
Tj
= 125 °C
Rgon
= 81 Ω
Rgoff
= 81 Ω
Output inverter IGBT
Figure 1
Output inverter IGBT
Figure 2
Turn-off Switching Waveforms & definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon
(tEon = integrating time for Eon)
200
140
%
%
120
tdoff
IC
160
VCE
100
VCE 90%
VGE 90%
120
80
VCE
IC
VGE
VGE
80
60
tdon
tEoff
40
40
IC 1%
20
IC10%
VGE10%
VCE 3%
0
0
-20
-0,25
tEon
-40
-0,05
0,15
0,35
0,55
0,75
2,4
2,6
2,8
3
3,2
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdoff =
tEoff =
-15
15
600
15
0,42
0,70
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdon =
tEon =
V
V
V
A
µs
µs
Output inverter IGBT
Figure 3
3,4
time(us)
time (us)
-15
15
600
15
0,05
0,43
V
V
V
A
µs
µs
Output inverter IGBT
Figure 4
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
120
220
%
%
VCE
fitted
IC
100
180
IC 90%
Ic
80
140
IC 60%
60
VCE
100
IC90%
IC 40%
40
tr
60
20
IC10%
20
0
IC10%
tf
-20
0,1
0,2
0,3
0,4
0,5
0,6
-20
0,7
2,6
2,7
2,8
2,9
time (us)
VC (100%) =
IC (100%) =
tf =
copyright Vincotech
600
15
0,22
3
3,1
time(us)
VC (100%) =
IC (100%) =
tr =
V
A
µs
11
600
15
0,03
V
A
µs
Revision: 3
V23990-K218-F-PM
Switching Definitions Output Inverter
Output inverter IGBT
Figure 5
Output inverter IGBT
Figure 6
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
180
%
Poff
Pon
%
Eoff
100
140
80
Eon
100
60
40
60
20
VGE 90%
20
0
VGE 10%
VCE 3%
tEoff
tEon
IC 1%
-20
-0,2
0
0,2
0,4
0,6
-20
2,65
0,8
2,75
2,85
2,95
Poff (100%) =
Eoff (100%) =
tEoff =
8,95
1,66
0,70
3,05
3,15
time(us)
time (us)
Pon (100%) =
Eon (100%) =
tEon =
kW
mJ
µs
8,95
2,04
0,43
kW
mJ
µs
Output inverter FWD
Figure 7
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
Vd
fitted
0
IRRM10%
-40
IRRM90%
-80
IRRM100%
-120
2,5
2,65
2,8
2,95
3,1
3,25
3,4
3,55
time(us)
Vd (100%) =
Id (100%) =
IRRM (100%) =
trr =
copyright Vincotech
600
15
14
0,65
V
A
A
µs
12
Revision: 3
V23990-K218-F-PM
Switching Definitions Output Inverter
Output inverter FWD
Figure 8
Output inverter FWD
Figure 9
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec)
150
120
Erec
%
%
Id
100
Qrr
100
80
50
tErec
60
tQrr
40
0
20
Prec
-50
0
-100
-20
2,6
2,85
3,1
3,35
3,6
3,85
4,1
2,7
3,1
3,5
Id (100%) =
Qrr (100%) =
tQrr =
copyright Vincotech
15
3,38
1,18
3,9
4,3
time(us)
time(us)
Prec (100%) =
Erec (100%) =
tErec =
A
µC
µs
13
8,95
1,35
1,18
kW
mJ
µs
Revision: 3
V23990-K218-F-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
with std lid (black V23990-K12-T-PM)
with std lid (black V23990-K12-T-PM) and P12
with thin lid (white V23990-K13-T-PM)
with thin lid (white V23990-K13-T-PM) and P12
Ordering Code
in DataMatrix as
V23990-K218-F-/0A/-PM
V23990-K218-F-/1A/-PM
V23990-K218-F-/0B/-PM
V23990-K218-F-/1B/-PM
K218-F
K218-F
K218-F
K218-F
in packaging barcode as
K218-F-/0A/
K218-F-/1A/
K218-F-/0B/
K218-F-/1B/
Outline
Pinout
copyright Vincotech
14
Revision: 3
V23990-K218-F-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
15
Revision: 3