CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVision (SATV) tuners 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 15 V VCEO collector-emitter voltage open base - - 6 V IC collector current (DC) - - 10 mA mW Ptot total power dissipation Tsp 145 C - - 60 hFE DC current gain IC = 5 mA; VCE = 3 V; Tj = 25 C 60 100 200 CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF fT transition frequency IC = 5 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C - 14 - GHz [1] BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit MSG maximum stable gain IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C - 18 - dB s212 insertion power gain IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 - 14 - dB NF noise figure s = opt; IC = 1 mA; VCE = 3 V; f = 2 GHz - 1 - dB [1] Tsp is the temperature at the soldering point of the collector pin. 2. Pinning information Table 2. Pinning Pin Description 1 collector 2 emitter 3 base 4 emitter Simplified outline 3 Symbol 1 4 3 2, 4 2 sym086 1 3. Ordering information Table 3. Ordering information Type number BFG310W/XR Package Name Description Version - plastic surface mounted package; reverse pinning; 4 leads SOT343R 4. Marking Table 4. Marking code[1] BFG310W/XR A7* [1] BFG310W_XR Product data sheet Marking codes Type number * = p: made in Hong Kong. All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 6 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 10 mA - 60 mW Tsp 145 C [1] Ptot total power dissipation Tstg storage temperature 65 +175 C Tj junction temperature - 175 C [1] Tsp is the temperature at the soldering point of the collector pin. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) [1] Conditions thermal resistance from junction to solder point Tsp 145 C [1] Typ Unit 530 K/W Tsp is the temperature at the soldering point of the collector pin. 7. Characteristics Table 7. Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit nA ICBO collector-base cut-off current IE = 0 A; VCB = 6 V - - 15 hFE DC current gain IC = 5 mA; VCE = 3 V 60 100 200 CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.22 - pF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz; collector grounded - 0.16 - pF fT transition frequency IC = 5 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C - 14 - GHz MSG maximum stable gain IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C - 18 - dB s212 insertion power gain IC = 5 mA; VCE = 3 V; Tamb = 25 C; ZS = ZL = 50 f = 1.8 GHz - 14 - dB f = 3 GHz - 11 - dB NF noise figure s = opt; IC = 1 mA; VCE = 3 V; f = 2 GHz - 1 - dB PL(1dB) output power at 1 dB gain compression IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 - 1.8 - dBm IP3 third order intercept point IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 - 8.5 - dBm BFG310W_XR Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 001aac177 70 Ptot (mW) 60 001aac178 10 IC (mA) IB = 120 μA 8 100 μA 50 80 μA 6 40 60 μA 30 4 40 μA 20 20 μA 2 10 0 0 50 100 150 0 200 0 Tsp (°C) Fig 1. Power derating curve Fig 2. 001aac179 0.20 CCBS (pF) 1 2 3 4 5 VCE (V) 6 Collector current as a function of collector-emitter voltage; typical values 001aac180 40 G (dB) 0.19 MSG 30 0.18 s21 2 20 0.17 10 0.16 0 0.15 0 1 2 3 4 10 5 102 IC = 0 mA; f = 1 MHz. Fig 3. Product data sheet 104 IC = 5 mA; VCE = 3 V. Collector-base capacitance as a function of collector-base voltage; typical values BFG310W_XR 103 f (MHz) VCB (V) Fig 4. Gain as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 3 GHz 5 0° 0 −5 −0.2 −135° 10 40 MHz −2 −0.5 −45° −1 1.0 −90° 001aac181 VCE = 3 V; IC = 5 mA; Zo = 50 . Fig 5. Common emitter input reflection coefficient (s11); typical values 90° 135° 180° 20 16 45° 12 8 40 MHz 4 0 3 GHz −135° 0° −45° −90° 001aac182 VCE = 3 V; IC = 5 mA. Fig 6. BFG310W_XR Product data sheet Common emitter forward transmission coefficient (s21); typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 90° 135° 45° 3 GHz 180° 0.5 0.4 0.3 0.2 0.1 0 0° 40 MHz −135° −45° −90° 001aac183 VCE = 3 V; IC = 5 mA. Fig 7. Common emitter reverse transmission coefficient (s12); typical values 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 40 MHz −5 −0.2 3 GHz −135° −2 −0.5 −45° −1 −90° 1.0 001aac184 VCE = 3 V; IC = 5 mA; Zo = 50 . Fig 8. BFG310W_XR Product data sheet Common emitter output reflection coefficient (s22); typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 8. Application information Table 8. BFG310W_XR Product data sheet SPICE parameters of the BFG310W DIE Sequence Parameter Value Unit 1 IS 16.17 aA 2 BF 210 - 3 NF 1 - 4 VAF 50 V 5 IKF 59.83 mA 6 ISE 1.726 fA 7 NE 2.114 - 8 BR 6 - 9 NR 1 - 10 VAR 2.3 V 11 IKR 10 A 12 ISC 0 aA 13 NC 1.5 - 14 RB 3.6 15 RE 2.1 16 RC 1.6 17 CJE 115.6 fF 18 VJE 866.3 mV 19 MJE 0.285 - 20 CJC 68.18 fF 21 VJC 601 mV 22 MJC 0.123 - 23 XCJC 1 - 24 FC 0.7 - 25 TF 8.3 ps 26 XTF 10 - 27 VTF 1000 V 28 ITF 150 mA 29 PTF 0 deg 30 TR 0 ns 31 KF 0 - 32 AF 1 - 33 TNOM 25 C 34 EG 1.014 eV 35 XTB 0 - 36 XTI 8 - 37 Q1.AREA 1 - All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor LC_lead LC_wire CCB C_base_pad LB_lead BJT1 LB_wire CBE C_emitter_pad CCE CHIP LE_wire LE_lead 001aac166 Fig 9. Table 9. BFG310W_XR Product data sheet Package equivalent circuit of SOT343R List of components; see Figure 9 Designation Value Unit CCB 2 fF CBE 80 fF CCE 80 fF C_base_pad 67 fF C_emitter_pad 142 fF LC_wire 0.767 nH LB_wire 0.842 nH LE_wire 0.212 nH LC_lead 0.28 nH LB_lead 0.281 nH LE_lead 0.1 nH All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 9. Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-21 06-03-16 SOT343R Fig 10. Package outline SOT343R BFG310W_XR Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BFG310W_XR v.2 20110915 Product data sheet - BFG310W_XR v.1 Modifications: BFG310W_XR v.1 (9397 750 14245) BFG310W_XR Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. 20050202 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 - © NXP B.V. 2011. All rights reserved. 10 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BFG310W_XR Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BFG310W_XR Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 13 BFG310W/XR NXP Semiconductors NPN 14 GHz wideband transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 September 2011 Document identifier: BFG310W_XR