Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • Excellent collector current IC characteristics of forward current transfer ratio hFE • High transition frequency fT • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 120 V Collector-emitter voltage (Base open) VCEO 120 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 0.5 A Peak collector current ICP 1.0 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 120 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 90 hFE2 VCE = 5 V, IC = 500 mA 65 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 220 IC = 300 mA, IB = 30 mA 1.0 V IC = 300 mA, IB = 30 mA 1.2 V 100 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 11 MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Publication date: January 2003 SJD00100BED 1 2SC2590 PC Ta TC=25˚C 160 4 3 (1) 2 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 80 0.5mA 0.4mA 0.3mA 40 1 0.2mA (2) 0.1mA 0 0 40 80 120 160 200 0 2 4 6 8 VBE(sat) IC hFE IC TC=100˚C 25˚C –25˚C 100 10 0.01 1 1 0.01 0.01 –25˚C TC=100˚C 0.1 1 Single pulse TC=25˚C IE=0 f=1MHz TC=25˚C 60 40 20 t=10ms IC t=1s 0.1 0.01 0.001 100 ICP 1 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00100BED VCB=10V f=200MHz TC=25˚C 300 200 100 0 −1 −10 Emitter current IE (mA) Safe operation area 10 80 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 2 0.1 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) 0.1 fT I E Transition frequency fT (MHz) Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 0.1 10 25˚C VCE=10V 25˚C 1 1 Collector current IC (A) 1 000 0.1 IC/IB=10 400 100˚C 0 12 Collector-emitter voltage VCE (V) TC=–25˚C 0.01 0.01 10 Ambient temperature Ta (°C) IC/IB=10 1 Collector-emitter saturation voltage VCE(sat) (V) 5 0 VCE(sat) IC (1)With a 100×100×2mm Al heat sink (2)Without heat sink Collector current IC (mA) Collector power dissipation PC (W) IC VCE 280 6 −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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