Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 ■ Features Symbol Rating Unit VCBO −30 V −60 2SA0720 0.45+0.15 –0.1 0.45+0.15 –0.1 −25 Collector-emitter voltage 2SA0719 (Base open) 2SA0720 VCEO V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −500 mA Peak collector current ICP −1 A Collector power dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2.5+0.6 –0.2 −50 2.5+0.6 –0.2 1 2 3 2.3±0.2 Collector-base voltage (Emitter open) 2SA0719 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.7±0.2 • Complementary pair with 2SC1317 and 2SC1318 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SA0719 Collector-emitter voltage (Base open) 2SA0719 Conditions IC = −10 µA, IE = 0 VCBO Min Typ −30 IC = −10 mA, IB = 0 VCEO V −25 V −50 2SA0720 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 Collector-emitter saturation voltage VCE(sat) IC = −300 mA, IB = −30 mA Base-emitter saturation voltage VBE(sat) IC = −300 mA, IB = −30 mA −1.1 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 Transition frequency Unit −60 2SA0720 fT Collector output capacitance (Common base, input open circuited) Max VCB = −10 V, IE = 0, f = 1 MHz Cob −5 V − 0.1 µA 340 − 0.35 − 0.60 6 −1.5 V V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00002CED 1 2SA0719, 2SA0720 PC Ta IC VCE IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −600 400 300 −400 200 − 0.3 mA − 0.2 mA −200 100 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) −2 0 Ta = 75°C 25°C −25°C −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) −1 − 0.01 −10 −100 −1 000 0 −1 Ta = −25°C 75°C − 0.01 −1 −10 −100 200 160 120 80 40 100 Collector output capacitance C (pF) (Common base, input open circuited) ob VCB = −10 V Ta = 25°C 50 500 400 300 Ta = 75°C 25°C −25°C 200 100 − 0.1 −1 −10 VCER RBE 30 20 10 −100 Collector-base voltage VCB (V) SJC00002CED −10 Collector current IC (A) IE = 0 f = 1 MHz Ta = 25°C −10 −8 VCE = −10 V 0 − 0.01 −1 000 40 0 −1 −6 hFE IC 600 Cob VCB Emitter current IE (mA) −4 Base current IB (mA) IC / IB = 10 25°C fT I E 10 −2 0 Collector current IC (mA) 240 1 −100 −12 −10 Collector current IC (mA) Transition frequency fT (MHz) −10 − 0.1 − 0.001 −1 2 −8 −200 VBE(sat) IC IC / IB = 10 − 0.1 −6 −300 Collector-emitter voltage VCE (V) VCE(sat) IC −10 −4 −400 Forward current transfer ratio hFE 20 −500 −120 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 − 0.1 mA Collector current IC (mA) −600 −800 500 VCE = −10 V Ta = 25°C −700 −1 000 600 0 −800 Ta = 25°C Collector current IC (mA) Collector power dissipation PC (mW) 700 0 IC I B −1 200 800 IC = −2 mA Ta = 25°C −100 −80 −60 2SA0720 −40 2SA0719 −20 0 1 10 100 1 000 Base-emitter resistance RBE (kΩ) 2SA0719, 2SA0720 ICEO Ta 104 Safe operation area −10 Collector current IC (mA) VCE = −10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 ICP IC −1 t = 10 ms t=1s − 0.1 − 0.01 10 1 Single pulse Ta = 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 200 − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJC00002CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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