Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2SC1567A Unit: mm 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Symbol 2SA0794 Rating −100 VCBO Unit 0.75±0.1 V −120 2SA0794A −100 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 V Collector-emitter voltage 2SA0794 (Base open) 2SA0794A VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.76±0.1 2.3±0.2 −120 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SA0794 Collector-emitter voltage (Base open) Conditions VCEO IC = −100 µA, IB = 0 VEBO IE = −1 µA, IC = 0 VCE = −10 V, IC = −150 mA 90 VCE = −5 V, IC = −500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA hFE1 Transition frequency * fT Collector output capacitance (Common base, input open circuited) Max Unit V −5 hFE2 Forward current transfer ratio Typ −120 2SA0794A Emitter-base voltage (Collector open) Min −100 Cob V 220 − 0.2 − 0.4 V − 0.85 −1.20 V 100 VCB = −10 V, IE = 50 mA, f = 200 MHz 120 VCB = −10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00001BED 1 2SA0794, 2SA0794A PC Ta IC VCE TC = 25°C − 0.8 − 0.6 0.8 −4 mA −2 mA − 0.4 0.4 − 0.2 0 − 0.6 40 80 120 − 0.2 −2 0 −4 −6 −8 −10 −6 −8 −10 −12 −14 VBE(sat) IC Collector current IC (A) −25°C 75°C − 0.1 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 IC / IB = 10 IC / IB = 10 −1 TC = 100°C 25°C −25°C − 0.1 − 0.2 − 0.01 − 0.01 Base-emitter voltage VBE (V) − 0.1 −1 100°C 25°C − 0.1 − 0.01 − 0.01 fT I E TC = 100°C 25°C −25°C − 0.1 Collector current IC (A) −1 VCB = −10 V f = 200 MHz TC = 25°C 160 120 80 40 0 1 10 Emitter current IE (mA) SJD00001BED −1 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 1 000 − 0.1 Collector current IC (A) 200 VCE = −10 V TC = −25°C −1 Collector current IC (A) hFE IC Forward current transfer ratio hFE −4 VCE(sat) IC − 0.3 2 −2 0 IC VBE − 0.4 10 − 0.01 0 −12 Base current IB (mA) Ta = 125°C 100 − 0.4 Collector-emitter voltage VCE (V) VCE = −10 V 0 − 0.6 Ambient temperature Ta (°C) − 0.5 0 0 160 − 0.8 Base-emitter saturation voltage VBE(sat) (V) 0 VCE = −10 V TC = 25°C −1.0 Collector current IC (A) Collector current IC (A) 1.2 −1.2 −18 mA IB = −20 mA −16 mA −14 mA −12 mA −10 mA −8 mA −6 mA −1.0 Collector-emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) IC I B −1.2 1.6 100 50 IE = 0 f = 1 MHz TC = 25°C 40 30 20 10 0 −1 −10 −100 Collector-base voltage VCB (V) 2SA0794, 2SA0794A ICEO Ta 105 ICBO Ta 104 VCE = 20 V Safe operation area −10 VCB = −20 V Single pulse TC = 25°C 104 103 102 Collector current IC (A) ICBO (Ta) ICBO (Ta = 25°C) ICEO (Ta) ICEO (Ta = 25°C) 103 102 0 40 80 120 160 Ambient temperature Ta (°C) 200 1 IC t=1s − 0.1 t = 10 ms − 0.01 10 10 1 ICP −1 0 40 80 120 Ambient temperature Ta (°C) SJD00001BED 160 − 0.001 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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