Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with 2SA0963 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1.5 A Peak collector current ICP 3 A Collector power dissipation * PC 10 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 0.5±0.1 4.6±0.2 1 3.05±0.1 2.3±0.2 3.8±0.3 ■ Features 11.0±0.5 120° 2 1.26±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126A-A1 Package 3 Note) *: TC = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 40 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = 5 V, IC = 1 A Collector-emitter saturation voltage VCE(sat) IC = 1.5 A, IB = 0.15 A Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.2 A Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Min Typ 80 Max Unit 10 µA 220 1 V 1.5 V VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz VCB = 5 V, IE = 0, f = 1 MHz 50 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE 80 to 160 120 to 220 Publication date: January 2003 SJD00097BED 1 2SC2209 IC VCE VCE(sat) IC 4.0 TC=25˚C TC=Ta Collector power dissipation PC (W) 3.5 10 Collector current IC (A) 8 6 4 IB=40mA 35mA 3.0 30mA 2.5 25mA 20mA 2.0 15mA 1.5 10mA 1.0 2 5mA 0.5 0 0 0 40 80 120 160 200 0 2 4 6 8 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) PC Ta 12 IC/IB=10 1 TC=100˚C 25˚C –25˚C 0.1 0.01 0.001 0.01 0.1 1 Collector current IC (A) fT I E 240 Forward current transfer ratio hFE TC=–25˚C 1 100˚C 25˚C 0.1 0.01 0.01 0.1 TC=100˚C 25˚C –25˚C 100 10 1 0.01 1 Collector current IC (A) 80 40 −0.1 40 20 10 100 −10 ICBO Ta 1000 VCB=20V 50 40 ICBO (Ta) ICBO (Ta = 25°C) 60 −1 Emitter current IE (A) TC=25˚C Collector-emitter voltage (V) (Resistor between B and E) VCER Collector output capacitance C (pF) (Common base, input open circuited) ob 80 1 120 VCER RBE IE=0 f=1MHz TC=25˚C 100 160 0 −0.01 1 60 Collector-base voltage VCB (V) 2 0.1 200 Collector current IC (A) Cob VCB 120 0 VCB=5V f=200MHz TC=25˚C VCE=5V 1000 Transition frequency fT (MHz) Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 10 30 20 100 10 10 0 0.001 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJD00097BED 1 0 20 40 60 80 Ambient temperature Ta (°C) 100 2SC2209 Safe operation area 10 Single pulse TC=25˚C Collector current IC (A) ICP 1 IC t=10ms t=1s 0.1 0.01 0.001 0.1 1 10 100 Collector-emitter voltage VCE (V) SJD00097BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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