Transistors 2SC3757 Silicon NPN epitaxial planer type Unit: mm For high speed switching 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 1.1+0.3 –0.1 1.1+0.2 –0.1 10° ■ Absolute Maximum Ratings Ta = 25°C Collector to base voltage 0.4±0.2 2 1 (0.65) • High-speed switching • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Allowing pair use with 2SA1738 5° 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 1: Base 2: Emitter 3: Collector JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol: 2Y ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 15 V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 4 V, IC = 0 0.1 µA hFE VCE = 1 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA Base to emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA Forward current transfer ratio * Transition frequency VCB = 10 V, IE = −10 mA, f = 200 MHz fT Collector output capacitance VCB = 10 V, IE = 0, f = 1 MHz Cob Turn-on time ton Turn-off time toff Storage time tstg 60 200 0.17 1.0 450 2 17 Refere to the measurement circuit 0.25 V V MHz 6 pF ns 17 ns 10 ns Note) *: Rank classification Rank Q R hFE 60 to 120 90 to 200 Marking symbol 2YQ 2YR 1 2SC3757 Transistors PC Ta Switching time measurement circuit ton , toff Test circuit 0.1 µF VOUT VIN = 10 V 3.3 kΩ 50 Ω 3.3 kΩ 50 Ω VCC = 3 V 10% VIN 10% VOUT 1 kΩ 90 Ω 910 Ω 500 Ω 500 Ω 50 Ω VCC = 10 V VDD = 2 V 0 VIN 10% VOUT 10% 90% 90% VOUT VOUT A VIN = 10 V VDD = −3 V VIN Collector power dissipation PC (mW) tstg Test circuit 0.1 µF 220 Ω 240 ton toff tstg 200 160 120 80 40 0 (Waveform at A) 80 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 0 0.2 0.4 0.6 0.8 1.0 1.2 IC / IB = 10 10 3 1 25°C 0.3 0.1 0.03 Collector to emitter voltage VCE (V) 300 0 0.1 Ta = 75°C 25°C −25°C 0.3 1 3 10 30 Collector current IC (mA) 2 10 30 3 Ta = −25°C 25°C 75°C 1 0.3 0.1 0.03 0.01 100 1 10 3 100 400 300 200 100 −3 −10 −30 100 300 1 000 Cob VCB 500 0 −1 30 Collector current IC (mA) 6 VCB = 10 V Ta = 25°C Transition frequency fT (MHz) Forward current transfer ratio hFE 400 100 3 10 fT I E 500 200 1 600 VCE = 1 V 160 30 Collector current IC (mA) hFE IC 600 Ta = 75°C −25°C 0.3 120 VBE(sat) IC 30 0.01 0.1 80 100 Base to emitter saturation voltage VBE(sat) (V) IB = 3.0 mA 2.5 mA 100 −100 −300 −1 000 Emitter current IE (mA) Collector output capacitance Cob (pF) Collector current IC (mA) Ta = 25°C 100 0 40 Ambient temperature Ta (°C) VCE(sat) IC 120 Collector to emitter saturation voltage VCE(sat) (V) IC VCE 0 IE = 0 f = 1 MHz Ta = 25°C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V)