Transistors 2SA2010 Silicon PNP epitaxial planer type Unit: mm For DC-DC converter For various driver circuits 0.40+0.10 –0.05 1.9±0.1 1.1+0.3 –0.1 1.1+0.2 –0.1 10° 0 to 0.1 Symbol Rating Unit Collector to base voltage VCBO −15 V Collector to emitter voltage VCEO −15 V Emitter to base voltage VEBO −5 V Peak collector current ICP −10 A Collector current IC −2.5 A * 0.4±0.2 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 5° 2 1 (0.95) (0.95) (0.65) • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary pair with 2SC5592 2.8+0.2 –0.3 1.50+0.25 –0.05 3 ■ Features Collector power dissipation 0.16+0.10 –0.06 PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: AS Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 mm3. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit − 0.1 µA ICBO VCB = −10 V, IE = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −15 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −15 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −5 Forward current transfer ratio *1 hFE1 VCE = −2 V, IC = −100 mA 200 hFE2 VCE = −2 V, IC = −2.5 A 100 VCE(sat) IC = −1 A, IB = −10 mA −140 IC = −2.5 A, IB = −50 mA −270 Collector cutoff current Collector to emitter saturation voltage *1 Collector output capacitance Transition frequency Cob fT V 560 mV −320 mV VCB = 10 V, IE = 0, f = 1 MHz 40 pF VCB = −10 V, IE = 50 mA f = 200 MHz 180 MHz Turn-on time *2 ton 35 ns Storage time *2 tstg 110 ns Turn-off time *2 toff 10 ns Note) *1: Rank classification *2: Reference to the measurement circuit. 1 2SA2010 Transistors ■ Measurement Circuit IB2 IB1 Input Output RB PW = 20 µs DC ≤ 1% RL 470 µF VCC = −5 V −201B1 = 201B2 = IC = −1.5 A 2