elm16601ea

Complementary MOSFET
ELM16601EA-S
■General Description
■Features
ELM16601EA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
N-channel
•
•
•
•
•
Vds=30V
Vds=-30V
Id=3.4A(Vgs=10V)
Id=-2.3A(Vgs=-10V)
Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 135mΩ(Vgs=-10V)
Rds(on) < 75mΩ(Vgs=4.5V) Rds(on) < 185mΩ(Vgs=-4.5V)
Rds(on) < 115mΩ(Vgs=2.5V) Rds(on) < 265mΩ(Vgs=-2.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
P-channel
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
Vds
Vgs
30
±12
-30
±12
V
V
Id
3.4
2.7
-2.3
-1.8
A
1
Idm
30
-30
A
2
Pd
1.15
0.73
1.15
0.73
W
Tj,Tstg
-55 to 150
-55 to 150
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Steady-state
t≤10s
Steady-state
Maximum junction-to-lead
Steady-state
Rθja
6
1
5
2
4
3
Max.
110
150
Unit
°C/W
°C/W
Note
N-ch
Typ.
78
106
80
110
150
°C/W
°C/W
°C/W
3
P-ch
64
78
106
64
80
°C/W
3
Rθjl
Rθja
Rθjl
■Pin configuration
SOT-26(TOP VIEW)
Device
1
1
■Circuit
• N-ch
Pin No.
Pin name
1
2
3
GATE1
SOURCE2
GATE2
4
5
6
DRAIN2
SOURCE1
DRAIN1
7-1
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM16601EA-S
■Electrical Characteristics (N-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vds=0V, Vgs=±12V
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body-diode reverse recovery time
Body-diode reverse recovery charge
Rds(on)
Gfs
Vsd
V
1
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
5
100
1.0
1.4
50
60
Vgs=4.5V, Id=3A
75
60
75
Vgs=2.5V, Id=2A
Vds=5V, Id=3A
Is=1A, Vgs=0V
88
7.8
0.8
Vgs=10V, Id=3A
Static drain-source on-resistance
30
0.6
10
Ta=125°C
Is
Ciss
Coss
Crss
Rg
Qg
Qgs
nA
V
A
mΩ
115
1.0
S
V
1.5
A
390.0
pF
Vgs=0V, Vds=0V, f=1MHz
54.5
41.0
3
pF
pF
Ω
Vgs=4.5V, Vds=15V, Id=3A
4.34
1.38
nC
nC
0.60
4
nC
ns
2
22
3
ns
ns
ns
11.0
5.5
ns
nC
Vgs=0V, Vds=15V, f=1MHz
Qgd
td(on)
tr
Vgs=10V, Vds=15V
td(off) RL=5Ω, Rgen=6Ω
tf
trr
Qrr
μA
If=3A, dIf/dt=100A/μs
If=3A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-2
Complementary MOSFET
ELM16601EA-S
AO6601 n-channel typical characteristics
■Typical
Electrical
and
Thermal
Characteristics
TYPICAL
ELECTRICAL
AND
THERMAL
CHARACTERISTICS
15
10
10V
3V
12
Vds=5V
8
4.5V
25°C
9
Id (A)
Id (A)
(N-ch)
2.5V
6
3
125°C
6
4
2
Vgs=2V
0
0
0
1
2
3
4
5
0
0.5
150
1.5
2
2.5
3
3.5
Normalized On-Resistance
1.8
125
Rds(on) (m� )
1
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=2.5V
100
Vgs=4.5V
75
50
Vgs=10V
25
1.6
Vgs=4.5V
Vgs=10V
1.4
1.2
Vgs=2.5V
1
0
0
2
4
6
8
0.8
10
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
200
1.0E+00
Id=2A
1.0E-01
100
Is (A)
Rds(on) (m� )
150
125°C
125°C
1.0E-02
1.0E-03
50
25°C
25°C
1.0E-04
1.0E-05
0
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
7-3
1.2
Complementary MOSFET
AO6601 n-channel typical characteristics
ELM16601EA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
500
Capacitance (pF)
4
Vgs (Volts)
600
Vds=15V
Id=3.4A
3
2
1
Ciss
400
300
200
0
0
1
2
3
4
5
0
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
100�s
1ms
10s
DC
1
Vds (Volts)
10
100
30
10
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z �ja Normalized Transient
Thermal Resistance
25
Tj(max.)=150°C
Ta=25°C
0
0.001
0.1
10
20
5
1s
0.1
15
15
10�s
0.1s 10ms
1.0
10
20
Tj(max.)=150°C
Ta=25°C
10.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
Id (Amps)
100.0
Crss
Coss
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-4
100
1000
Complementary MOSFET
ELM16601EA-S
■Electrical Characteristics (P-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Rds(on)
Gfs
Vsd
V
-1
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
-5
±100
-0.6
-10
107
135
Vgs=-4.5V, Id=-2A
135
185
mΩ
Vgs=-2.5V, Id=-1A
Vds=-5V, Id=-2.3A
Is=-1A, Vgs=0V
195
8
-0.85
265
-1.00
mΩ
S
V
-1.35
A
Ta=125°C
Ciss
Qg
Qgs
Qgd
td(on)
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-2.5A
tr
Vgs=-10V, Vds=-15V
td(off) RL=6Ω, Rgen=6Ω
tf
trr
Qrr
nA
-1.4
Is
Coss
Crss
Rg
μA
-1.0
Vgs=-10V, Id=-2.3A
Static drain-source on-resistance
-30
If=-2.5A, dIf/dt=100A/μs
If=-2.5A, dIf/dt=100A/μs
V
A
mΩ
409
pF
55
42
12
pF
pF
Ω
4.80
1.34
nC
nC
0.72
13
nC
ns
10
28
13
ns
ns
ns
26.0
15.6
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-5
Complementary MOSFET
ELM16601EA-S
AO6601, AO6601L
■Typical Electrical
and Thermal
Characteristics
(P-ch)
P-CHANNEL:
TYPICAL ELECTRICAL
AND THERMAL
CHARACTERISTICS
10
20
-5V
-10V
8
25°C
-4V
Vgs=-3.5V
-Id (A)
-Id (A)
15
Vds=-5V
-4.5V
10
-3V
6
125°C
4
-2.5V
5
2
-2V
0
0
0
1
2
3
4
5
0
0.5
250
1.5
2
2.5
3
3.5
4
1.6
225
Normalized On-Resistance
Vgs=-2.5V
200
Rds(on) (m� )
1
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
175
150
Vgs=-4.5V
125
100
Vgs=-10V
75
Vgs=-4.5V, Vgs=-10V
1.4
Vgs=-2.5V
1.2
Id=-2A
1
50
0
1
2
3
4
5
0.8
6
0
350
1.0E+01
300
1.0E+00
Id=-2A
250
200
1.0E-01
125°C
150
100
0
1.0E-06
6
8
125
150
175
125°C
25°C
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
100
1.0E-03
1.0E-05
4
75
1.0E-02
50
2
50
1.0E-04
25°C
0
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-Is (A)
Rds(on) (m� )
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
7-6
1.2
Complementary MOSFET
AO6601 p-channel typical characteristics
ELM16601EA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
500
Capacitance (pF)
4
-Vgs (Volts)
600
Vds=-15V
Id=-2.0A
3
2
1
400
Ciss
300
200
0
0
1
2
3
4
5
0
6
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
0.1s
10ms
1.0
10s
1
DC
Z �ja Normalized Transient
Thermal Resistance
25
30
Tj(max.)=150°C
Ta=25°C
10
0
0.001
-Vds (Volts)
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
5
0.1
0.1
15
15
Power (W)
-Id (Amps)
10�s
100�s
1s
10
20
Tj(max.)=150°C
Ta=25°C
Rds(on)
limited
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
Crss
Coss
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-7
100
1000