Complementary MOSFET ELM16604EA-S ■General Description ■Features ELM16604EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. N-channel • • • • • Vds=20V Vds=-20V Id=3.4A(Vgs=4.5V) Id=-2.5A(Vgs=-4.5V) Rds(on) < 60mΩ(Vgs=4.5V) Rds(on) < 110mΩ(Vgs=-4.5V) Rds(on) < 75mΩ(Vgs=2.5V) Rds(on) < 140mΩ(Vgs=-2.5V) Rds(on) < 100mΩ(Vgs=1.8V) Rds(on) < 200mΩ(Vgs=-1.8V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation P-channel Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Vds Vgs 20 ±8 -20 ±8 V V Id 3.4 2.7 -2.5 -2.0 A 1 Idm 15 -15 A 2 Pd 1.15 0.73 1.15 0.73 W Tj,Tstg -55 to 150 -55 to 150 °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Maximum junction-to-lead Maximum junction-to-ambient Maximum junction-to-ambient Steady-state t≤10s Steady-state Maximum junction-to-lead Steady-state Rθja 6 1 5 2 4 3 Max. 110 150 Unit °C/W °C/W Note N-ch Typ. 78 106 80 110 150 °C/W °C/W °C/W 3 P-ch 64 78 106 64 80 °C/W 3 Rθjl Rθja Rθjl ■Pin configuration SOT-26(TOP VIEW) Device 1 1 ■Circuit • N-ch Pin No. Pin name 1 2 3 GATE1 SOURCE2 GATE2 4 5 6 DRAIN2 SOURCE1 DRAIN1 7-1 • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM16604EA-S ■Electrical Characteristics (N-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±8V Forward transconductance Diode forward voltage Max.body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge Rds(on) Gfs Vsd V 1 Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V 5 100 0.6 1.0 46 60 Vgs=2.5V, Id=3A 63 57 80 75 Vgs=1.8V, Id=2A Vds=5V, Id=3.4A Is=1A, Vgs=0V 72 10 0.76 100 Vgs=4.5V, Id=3.4A Static drain-source on-resistance 20 0.4 15 Ta=125°C Is Ciss Coss Crss Rg Qg Qgs 436 Vgs=0V, Vds=10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz 66 44 3 Vgs=4.5V, Vds=10V, Id=3.4A 6.2 1.6 μA nA V A mΩ 1.00 S V 2 A 570 pF 4 pF pF Ω 8.1 nC nC Qgd td(on) 0.5 5.5 nC ns tr Vgs=5V, Vds=10V td(off) RL=3Ω, Rgen=3Ω tf 6.3 40.0 12.7 ns ns ns trr Qrr If=3.4A, dIf/dt=100A/μs If=3.4A, dIf/dt=100A/μs 12.3 3.5 16.0 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-2 Complementary MOSFET AO6604 ELM16604EA-S ■Typical Electrical and Thermal Characteristics (N-ch) N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 10 8V Vds=5V 4.5V 8 2V 3V 2.5V 8 6 Id (A) Id (A) 12 4 Vgs=1.5V 4 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 1.8 Normalized On-Resistance Rds(on) (m� ) 100 Vgs=1.8V 80 Vgs=2.5V 60 40 Vgs=4.5V 20 0 4 8 Vgs=2.5V 1.6 Vgs=1.8V Id=3.4A 1.4 Vgs=4.5V 1.2 1 0.8 12 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 90 1E+00 Id=3.4A 80 125°C 1E-01 70 Is (A) Rds(on) (m� ) 1 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 125°C 60 50 25°C 1E-03 25°C 40 1E-02 1E-04 30 1E-05 20 0 2 4 6 0.0 8 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 7-3 1.0 AO6604 Complementary MOSFET ELM16604EA-S N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 Vgs (Volts) Capacitance (pF) Vds=10V Id=3.4A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 15 Rds(on) limited 1.0 10�s 1ms 10ms 10s DC 10 0 0.001 0.1 1 Vds (Volts) 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 20 5 1s 0.1 15 Tj(max.)=150°C Ta=25°C 100�s 0.1s Z� ja Normalized Transient Thermal Resistance 10 20 Tj(max.)=150°C Ta=25°C Power (W) 100.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics Id (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-4 100 1000 Complementary MOSFET ELM16604EA-S ■Electrical Characteristics (P-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -20 -1 Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Rds(on) Gfs Vsd V -5 ±100 -0.55 -1.00 86 110 Vgs=-2.5V, Id=-2A 116 113 145 140 Vgs=-1.8V, Id=-1A Vds=-5V, Id=-3A Is=-1A, Vgs=0V 151 6 -0.78 200 Vgs=-4.5V Id=-2.5A -0.30 -15 Ta=125°C 4 Is Ciss Coss Crss Rg Qg Qgs Qgd td(on) 540 Vgs=0V, Vds=-10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-2.5A tr Vgs=-4.5V, Vds=-10V td(off) RL=3.9Ω, Rgen=3Ω tf trr Qrr If=-2.5A, dIf/dt=100A/μs If=-2.5A, dIf/dt=100A/μs 72 49 12.0 6.1 0.6 μA nA V A mΩ -1.00 S V -2 A 700 pF 15.6 pF pF Ω 8.0 nC nC 1.6 10 nC ns 12 44 22 ns ns ns 21.0 7.5 28.0 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-5 Complementary MOSFET AO6604 ELM16604EA-S ■Typical Electrical and Thermal Characteristics (P-ch) P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V Vds=-5V -2.5V -8V 4 10 5 -Id (A) -Id (A) -2.0V 2 Vgs=-1.5V 125°C 25°C 0 0 0 1 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 5 0 200 1 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 Vgs=-1.8V Rds(on) (m� ) 0.5 150 Vgs=-2.5V 100 Vgs=-4.5V 50 Vgs=-2.5V Id=-2.5A 1.6 Vgs=-1.8V 1.4 Vgs=-4.5V 1.2 1 0.8 0 2 4 6 0 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 1E+00 1E-01 -Is (A) Rds(on) (m� ) Id=-2.5A 150 125°C 100 25°C 125°C 1E-02 25°C 1E-03 1E-04 1E-05 50 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. 7-6 1.2 Complementary MOSFET AO6604 ELM16604EA-S P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 Vds=-10V Id=-2.5A Capacitance (pF) -Vgs (Volts) 4 3 2 1 0 0 2 4 6 Ciss 600 400 Crss 200 Coss 0 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 100�s 10.0 10�s 1ms Rds(on) limited 0.1s 10ms 10s DC 1 -Vds (Volts) 10 100 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 10 0 0.001 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=110°C/W Pd 0.1 0.01 0.00001 20 5 1s 1 15 Tj(max.)=150°C Ta=25°C 15 Power (W) -Id (Amps) Tj(max.)=150°C Ta=25°C 0.1 10 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 1.0 5 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-7 100 1000