elm16604ea

Complementary MOSFET
ELM16604EA-S
■General Description
■Features
ELM16604EA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
N-channel
•
•
•
•
•
Vds=20V
Vds=-20V
Id=3.4A(Vgs=4.5V)
Id=-2.5A(Vgs=-4.5V)
Rds(on) < 60mΩ(Vgs=4.5V) Rds(on) < 110mΩ(Vgs=-4.5V)
Rds(on) < 75mΩ(Vgs=2.5V) Rds(on) < 140mΩ(Vgs=-2.5V)
Rds(on) < 100mΩ(Vgs=1.8V) Rds(on) < 200mΩ(Vgs=-1.8V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
P-channel
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
Vds
Vgs
20
±8
-20
±8
V
V
Id
3.4
2.7
-2.5
-2.0
A
1
Idm
15
-15
A
2
Pd
1.15
0.73
1.15
0.73
W
Tj,Tstg
-55 to 150
-55 to 150
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Steady-state
t≤10s
Steady-state
Maximum junction-to-lead
Steady-state
Rθja
6
1
5
2
4
3
Max.
110
150
Unit
°C/W
°C/W
Note
N-ch
Typ.
78
106
80
110
150
°C/W
°C/W
°C/W
3
P-ch
64
78
106
64
80
°C/W
3
Rθjl
Rθja
Rθjl
■Pin configuration
SOT-26(TOP VIEW)
Device
1
1
■Circuit
• N-ch
Pin No.
Pin name
1
2
3
GATE1
SOURCE2
GATE2
4
5
6
DRAIN2
SOURCE1
DRAIN1
7-1
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM16604EA-S
■Electrical Characteristics (N-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=16V, Vgs=0V
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vds=0V, Vgs=±8V
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body-diode reverse recovery time
Body-diode reverse recovery charge
Rds(on)
Gfs
Vsd
V
1
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
5
100
0.6
1.0
46
60
Vgs=2.5V, Id=3A
63
57
80
75
Vgs=1.8V, Id=2A
Vds=5V, Id=3.4A
Is=1A, Vgs=0V
72
10
0.76
100
Vgs=4.5V, Id=3.4A
Static drain-source on-resistance
20
0.4
15
Ta=125°C
Is
Ciss
Coss
Crss
Rg
Qg
Qgs
436
Vgs=0V, Vds=10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
66
44
3
Vgs=4.5V, Vds=10V, Id=3.4A
6.2
1.6
μA
nA
V
A
mΩ
1.00
S
V
2
A
570
pF
4
pF
pF
Ω
8.1
nC
nC
Qgd
td(on)
0.5
5.5
nC
ns
tr
Vgs=5V, Vds=10V
td(off) RL=3Ω, Rgen=3Ω
tf
6.3
40.0
12.7
ns
ns
ns
trr
Qrr
If=3.4A, dIf/dt=100A/μs
If=3.4A, dIf/dt=100A/μs
12.3
3.5
16.0
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-2
Complementary MOSFET
AO6604
ELM16604EA-S
■Typical Electrical and Thermal Characteristics (N-ch)
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
10
8V
Vds=5V
4.5V
8
2V
3V
2.5V
8
6
Id (A)
Id (A)
12
4
Vgs=1.5V
4
125°C
2
25°C
0
0
0
1
2
3
4
5
0
0.5
1.5
2
2.5
1.8
Normalized On-Resistance
Rds(on) (m� )
100
Vgs=1.8V
80
Vgs=2.5V
60
40
Vgs=4.5V
20
0
4
8
Vgs=2.5V
1.6
Vgs=1.8V
Id=3.4A
1.4
Vgs=4.5V
1.2
1
0.8
12
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
1E+01
90
1E+00
Id=3.4A
80
125°C
1E-01
70
Is (A)
Rds(on) (m� )
1
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
125°C
60
50
25°C
1E-03
25°C
40
1E-02
1E-04
30
1E-05
20
0
2
4
6
0.0
8
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
7-3
1.0
AO6604
Complementary MOSFET
ELM16604EA-S
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
Vgs (Volts)
Capacitance (pF)
Vds=10V
Id=3.4A
4
3
2
1
600
Ciss
400
Coss
200
0
0
0
2
4
6
0
8
10.0
15
Rds(on)
limited
1.0
10�s
1ms
10ms
10s
DC
10
0
0.001
0.1
1
Vds (Volts)
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=110°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
5
1s
0.1
15
Tj(max.)=150°C
Ta=25°C
100�s
0.1s
Z� ja Normalized Transient
Thermal Resistance
10
20
Tj(max.)=150°C
Ta=25°C
Power (W)
100.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
Id (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-4
100
1000
Complementary MOSFET
ELM16604EA-S
■Electrical Characteristics (P-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-20
-1
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Rds(on)
Gfs
Vsd
V
-5
±100
-0.55
-1.00
86
110
Vgs=-2.5V, Id=-2A
116
113
145
140
Vgs=-1.8V, Id=-1A
Vds=-5V, Id=-3A
Is=-1A, Vgs=0V
151
6
-0.78
200
Vgs=-4.5V
Id=-2.5A
-0.30
-15
Ta=125°C
4
Is
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
540
Vgs=0V, Vds=-10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-2.5A
tr
Vgs=-4.5V, Vds=-10V
td(off) RL=3.9Ω, Rgen=3Ω
tf
trr
Qrr
If=-2.5A, dIf/dt=100A/μs
If=-2.5A, dIf/dt=100A/μs
72
49
12.0
6.1
0.6
μA
nA
V
A
mΩ
-1.00
S
V
-2
A
700
pF
15.6
pF
pF
Ω
8.0
nC
nC
1.6
10
nC
ns
12
44
22
ns
ns
ns
21.0
7.5
28.0
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-5
Complementary MOSFET
AO6604
ELM16604EA-S
■Typical Electrical and Thermal Characteristics (P-ch)
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
15
-4.5V
-3.0V
Vds=-5V
-2.5V
-8V
4
10
5
-Id (A)
-Id (A)
-2.0V
2
Vgs=-1.5V
125°C
25°C
0
0
0
1
2
3
4
-Vds (Volts)
Fig 1: On-Region Characteristics
5
0
200
1
1.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
2
Normalized On-Resistance
1.8
Vgs=-1.8V
Rds(on) (m� )
0.5
150
Vgs=-2.5V
100
Vgs=-4.5V
50
Vgs=-2.5V
Id=-2.5A
1.6
Vgs=-1.8V
1.4
Vgs=-4.5V
1.2
1
0.8
0
2
4
6
0
25
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
200
1E+00
1E-01
-Is (A)
Rds(on) (m� )
Id=-2.5A
150
125°C
100
25°C
125°C
1E-02
25°C
1E-03
1E-04
1E-05
50
0
2
4
6
8
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
7-6
1.2
Complementary MOSFET
AO6604
ELM16604EA-S
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
Vds=-10V
Id=-2.5A
Capacitance (pF)
-Vgs (Volts)
4
3
2
1
0
0
2
4
6
Ciss
600
400
Crss
200
Coss
0
8
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
100�s
10.0
10�s
1ms
Rds(on)
limited
0.1s
10ms
10s
DC
1
-Vds (Volts)
10
100
10
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
10
0
0.001
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=110°C/W
Pd
0.1
0.01
0.00001
20
5
1s
1
15
Tj(max.)=150°C
Ta=25°C
15
Power (W)
-Id (Amps)
Tj(max.)=150°C
Ta=25°C
0.1
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
1.0
5
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-7
100
1000