Data Sheet

SO
T2
3
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 — 6 December 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
 1.8 V RDSon rated
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 Relay driver
 High-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
-8
-
8
V
-
-
-1.2
A
-
170
210
mΩ
drain current
ID
[1]
VGS = -4.5 V; Tamb 25 °C
Static characteristics
drain-source on-state
resistance
RDSon
[1]
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
SOT23 (TO-236AB)
S
017aaa257
PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
PMV160UP
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV160UP
NH%
[1]
% = placeholder for manufacturing site code
PMV160UP
Product data sheet
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Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
drain current
ID
total power dissipation
Ptot
8
V
VGS = -4.5 V; Tamb 25 °C
-
-1.2
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-0.8
A
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-8
[1]
Tamb = 25 °C
-
-4
A
[2]
-
335
mW
[1]
-
480
mW
-
2170
mW
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-0.5
A
Source-drain diode
source current
IS
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
Fig 1.
017aaa124
120
−25
25
75
125
Normalized total power dissipation as a
function of junction temperature
PMV160UP
Product data sheet
0
−75
175
Tj (°C)
Fig 2.
−25
25
75
125
175
Tj (°C)
Normalized continuous drain current as a
function of junction temperature
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3 of 16
PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
017aaa339
–10
Limit RDSon = VDS/ID
ID
(A)
(1)
–1
(2)
–10–1
(3)
(4)
(5)
–10–2
–10–1
–1
–10
VDS (V)
–102
IDM = single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMV160UP
Product data sheet
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PMV160UP
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20 V, 1.2 A P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
thermal resistance
from junction to
ambient
Rth(j-a)
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
325
374
K/W
[2]
-
227
260
K/W
-
50
60
K/W
thermal resistance
from junction to solder
point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa340
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
10
0.01
0.02
0
1
10–3
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa341
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.5
0.25
0.2
0.1
0.05
10
0.02
0
1
10–3
0.01
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, mounting pad for drain 6 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV160UP
Product data sheet
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Rev. 2 — 6 December 2011
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PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.7
-0.95
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
IGSS
gate leakage current
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
-
170
210
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = -4.5 V; ID = -1.2 A; Tj = 150 °C
-
265
328
mΩ
VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C
-
210
270
mΩ
VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C
-
280
380
mΩ
VDS = -5 V; ID = -1.2 A; Tj = 25 °C
-
3.7
-
S
VDS = -10 V; ID = -1 A; VGS = -4.5 V;
Tj = 25 °C
-
3.3
4
nC
-
1
-
nC
-
0.5
-
nC
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
365
-
pF
-
42
-
pF
-
30
-
pF
-
7
-
ns
-
26
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
35
-
ns
tf
fall time
-
17
-
ns
-
-0.7
-1.2
V
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
Source-drain diode
VSD
source-drain voltage
PMV160UP
Product data sheet
IS = -0.5 A; VGS = 0 V; Tj = 25 °C
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6 of 16
PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
017aaa342
–4
–4.5 V
017aaa343
–10–3
–2.5 V
ID
(A)
VGS = –2.0 V
–2.3 V
ID
(A)
–3
–1.8 V
–10–4
–1.7 V
(1)
–2
(3)
(2)
–1.5 V
–10–5
–1.4 V
–1
0
0
–1
–2
–3
VDS (V)
–4
–10–6
–0.1
Tj = 25 °C
–0.3
–0.5
–0.7
–0.9
–1.1
VGS (V)
Tj = 25 °C; VDS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa344
1000
RDSon
(mΩ)
(1)
(2)
(3)
(4)
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
017aaa345
1000
RDSon
(mΩ)
(5)
800
800
600
600
400
400
(6)
(1)
(7)
200
200
(2)
0
–0.5
–1.5
–2.5
–3.5
ID (A)
0
–4.5
0
–2
Tj = 25 °C
ID = -2.5 A
(1) VGS = -1.4 V
(1) Tj = 150 °C
(2) VGS = -1.5 V
(2) Tj = 25 °C
–4
–5
VGS (V)
–6
(3) VGS = -1.6 V
(4) VGS = -1.8 V
(5) VGS = -2.0 V
(6) VGS = -2.5 V
(7) VGS = -4.5 V
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
PMV160UP
Product data sheet
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
017aaa346
–4
017aaa147
2.0
a
ID
(A)
(1)
(2)
–3
1.5
–2
1.0
0.5
–1
(2)
0
0
(1)
–1
–2
VGS (V)
–3
0.0
–60
0
60
120
Tj (°C)
180
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa148
–1.2
VGS(th)
(V)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa347
103
(1)
C
(pF)
(1)
–0.8
(2)
102
(2)
(3)
(3)
–0.4
0
–60
0
60
120
Tj (°C)
180
10
–10–1
–1
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PMV160UP
Product data sheet
–10
VDS (V)
–102
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
017aaa348
–5
VDS
VGS
(V)
ID
–4
VGS(pl)
–3
VGS(th)
VGS
–2
QGS1
QGS2
QGS
–1
QGD
QG(tot)
017aaa137
0
0
1
2
3
QG (nC)
4
ID = -1.0 A; VDS = -10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa349
–2.0
IS
(A)
–1.5
–1.0
(1)
(2)
–0.5
0.0
0.0
–0.4
–0.8
VSD (V)
–1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMV160UP
Product data sheet
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Rev. 2 — 6 December 2011
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PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
PMV160UP
Product data sheet
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Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
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PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 18. Package outline SOT23 (TO-236AB)
PMV160UP
Product data sheet
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NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
PMV160UP
Product data sheet
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Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
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20 V, 1.2 A P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMV160UP v.2
20111206
Product data sheet
-
PMV160UP v.1
Modifications:
PMV160UP v.1
PMV160UP
Product data sheet
•
7 “Characteristics”: VGSth condition is corrected
20110907
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 December 2011
-
© NXP B.V. 2011. All rights reserved.
13 of 16
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NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
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with the Terms and conditions of commercial sale of NXP Semiconductors.
PMV160UP
Product data sheet
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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20 V, 1.2 A P-channel Trench MOSFET
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMV160UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
15 of 16
PMV160UP
NXP Semiconductors
20 V, 1.2 A P-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information . . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 December 2011
Document identifier: PMV160UP