SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V - - -1.2 A - 170 210 mΩ drain current ID [1] VGS = -4.5 V; Tamb 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa257 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number PMV160UP Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV160UP NH% [1] % = placeholder for manufacturing site code PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb 25 °C - -1.2 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.8 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 [1] Tamb = 25 °C - -4 A [2] - 335 mW [1] - 480 mW - 2170 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -0.5 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMV160UP Product data sheet 0 −75 175 Tj (°C) Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa339 –10 Limit RDSon = VDS/ID ID (A) (1) –1 (2) –10–1 (3) (4) (5) –10–2 –10–1 –1 –10 VDS (V) –102 IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 325 374 K/W [2] - 227 260 K/W - 50 60 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa340 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 0.05 10 0.01 0.02 0 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa341 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.5 0.25 0.2 0.1 0.05 10 0.02 0 1 10–3 0.01 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C - 170 210 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; ID = -1.2 A; Tj = 150 °C - 265 328 mΩ VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C - 210 270 mΩ VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C - 280 380 mΩ VDS = -5 V; ID = -1.2 A; Tj = 25 °C - 3.7 - S VDS = -10 V; ID = -1 A; VGS = -4.5 V; Tj = 25 °C - 3.3 4 nC - 1 - nC - 0.5 - nC VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 365 - pF - 42 - pF - 30 - pF - 7 - ns - 26 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 35 - ns tf fall time - 17 - ns - -0.7 -1.2 V VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = -1 A Source-drain diode VSD source-drain voltage PMV160UP Product data sheet IS = -0.5 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa342 –4 –4.5 V 017aaa343 –10–3 –2.5 V ID (A) VGS = –2.0 V –2.3 V ID (A) –3 –1.8 V –10–4 –1.7 V (1) –2 (3) (2) –1.5 V –10–5 –1.4 V –1 0 0 –1 –2 –3 VDS (V) –4 –10–6 –0.1 Tj = 25 °C –0.3 –0.5 –0.7 –0.9 –1.1 VGS (V) Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa344 1000 RDSon (mΩ) (1) (2) (3) (4) Fig 7. Sub-threshold drain current as a function of gate-source voltage 017aaa345 1000 RDSon (mΩ) (5) 800 800 600 600 400 400 (6) (1) (7) 200 200 (2) 0 –0.5 –1.5 –2.5 –3.5 ID (A) 0 –4.5 0 –2 Tj = 25 °C ID = -2.5 A (1) VGS = -1.4 V (1) Tj = 150 °C (2) VGS = -1.5 V (2) Tj = 25 °C –4 –5 VGS (V) –6 (3) VGS = -1.6 V (4) VGS = -1.8 V (5) VGS = -2.0 V (6) VGS = -2.5 V (7) VGS = -4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMV160UP Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa346 –4 017aaa147 2.0 a ID (A) (1) (2) –3 1.5 –2 1.0 0.5 –1 (2) 0 0 (1) –1 –2 VGS (V) –3 0.0 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa148 –1.2 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa347 103 (1) C (pF) (1) –0.8 (2) 102 (2) (3) (3) –0.4 0 –60 0 60 120 Tj (°C) 180 10 –10–1 –1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMV160UP Product data sheet –10 VDS (V) –102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa348 –5 VDS VGS (V) ID –4 VGS(pl) –3 VGS(th) VGS –2 QGS1 QGS2 QGS –1 QGD QG(tot) 017aaa137 0 0 1 2 3 QG (nC) 4 ID = -1.0 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa349 –2.0 IS (A) –1.5 –1.0 (1) (2) –0.5 0.0 0.0 –0.4 –0.8 VSD (V) –1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT23 (TO-236AB) PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint for SOT23 (TO-236AB) PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV160UP v.2 20111206 Product data sheet - PMV160UP v.1 Modifications: PMV160UP v.1 PMV160UP Product data sheet • 7 “Characteristics”: VGSth condition is corrected 20110907 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 - © NXP B.V. 2011. All rights reserved. 13 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 14 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved. 15 of 16 PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 December 2011 Document identifier: PMV160UP