SO T3 23 PMF250XN 30 V, 0.9 A N-channel Trench MOSFET Rev. 1 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -12 - 12 V - - 0.9 A - 234 300 mΩ drain current ID [1] VGS = 4.5 V; Tamb = 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT323 (SC-70) S 017aaa253 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMF250XN Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] PMF250XN AZ% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage ID drain current peak drain current IDM total power dissipation Ptot -12 12 V VGS = 4.5 V; Tamb = 25 °C [1] - 0.9 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.6 A - 3.6 A [2] - 275 mW [1] - 340 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C - 1065 mW Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.4 A Source-drain diode source current IS Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 125 0 −75 175 Tj (°C) Normalized total power dissipation as a function of junction temperature Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature 017aaa377 10 Limit RDSon = VDS/ID ID (A) 1 (1) (2) 10-1 (3) (4) 10-2 10-1 (5) 1 10 VDS (V) 102 IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 397 457 K/W [2] - 318 366 K/W - 102 117 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa378 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.5 0.25 0.2 0.1 0.05 0.02 0 10 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa379 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 0.05 10 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 1 1.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C - 234 300 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 4.5 V; ID = 0.9 A; Tj = 150 °C - 351 450 mΩ VGS = 2.5 V; ID = 0.2 A; Tj = 25 °C - 324 540 mΩ VDS = 10 V; ID = 0.9 A; Tj = 25 °C - 2 - S VDS = 15 V; ID = 0.9 A; VGS = 4.5 V; Tj = 25 °C - 0.74 1.1 nC - 0.26 - nC - 0.22 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 0.9 A - 50 - pF - 10 - pF - 6 - pF - 8 - ns - 15 - ns turn-off delay time - 11 - ns fall time - 8 - ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage PMF250XN Product data sheet IS = -0.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 017aaa380 4 3.6 V 4.5 V ID (A) 017aaa180 10–3 VGS = 3.0 V ID (A) 2.8 V 3 10–4 (1) 2.5 V (2) (3) 2 2.3 V 10–5 1 1.8 V 0 0 1 2 3 VDS (V) 4 10–6 0.0 Tj = 25 °C 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values PMF250XN Product data sheet Fig 7. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 017aaa381 800 (3) (1) RDSon (mΩ) (5) RDSon (mΩ) (4) (2) 017aaa382 1000 800 600 600 400 (6) 400 (7) (1) (8) 200 200 (2) 0 0.2 1.0 1.8 2.6 0 3.4 ID (A) 0 4 Tj = 25 °C ID = 0.9 A (1) VGS = 2.0 V (1) Tj = 150 °C (2) VGS = 2.3 V (2) Tj = 25 °C 8 VGS (V) 12 (3) VGS = 2.4 V (4) VGS = 2.5 V (5) VGS = 2.8 V (6) VGS = 3.0 V (7) VGS = 3.6 V (8) VGS = 4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values Fig 9. 017aaa383 4 ID (A) Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa384 1.8 a (1) (2) 3 1.4 2 1.0 1 (1) 0 0 1 (2) 2 3 VGS (V) 4 0.6 -60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMF250XN Product data sheet Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 017aaa385 2.0 017aaa386 102 VGS(th) (V) (1) (1) 1.5 C (pF) (2) 1.0 (2) (3) 10 (3) 0.5 0 -60 0 60 120 Tj (°C) 180 1 10-1 1 10 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa387 4.5 VDS VGS (V) ID 3.0 VGS(pl) VGS(th) VGS 1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) 0.8 ID = 0.9 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values PMF250XN Product data sheet Fig 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 017aaa388 1.0 IS (A) 0.8 (1) 0.6 (2) 0.4 0.2 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT323 (SC-70) PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 10. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig 19. Reflow soldering footprint for SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 20. Wave soldering footprint for SOT323 (SC-70) PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMF250XN v.1 20111207 Product data sheet - - PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 12. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMF250XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 December 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 PMF250XN NXP Semiconductors 30 V, 0.9 A N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 December 2011 Document identifier: PMF250XN