Data Sheet

D2
PA
K
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
12 April 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of
NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
2. Features and benefits
•
•
Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses
3. Applications
•
•
•
•
Electronic fuse
Hot swap
Load switch
Soft start
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
IDM
peak drain current
pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 4
-
-
707
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
405
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
4.1
4.8
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
-
59
83
nC
total gate charge
Fig. 14; Fig. 15
-
196
278
nC
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
-
-
542
mJ
Avalanche Ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain[1]
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
D
G
1
S
mbb076
2
3
D2PAK (SOT404)
[1]
It is not possible to make connection to pin 2
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN4R8-100BSE
Name
Description
Version
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN4R8-100BSE
PSMN4R8-100BSE
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
-20
20
V
PSMN4R8-100BSE
Product data sheet
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
Symbol
Parameter
Conditions
ID
drain current
VGS = 10 V; Tj = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
Min
Max
Unit
[1]
-
120
A
[1]
-
120
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
707
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
405
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
120
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
707
A
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
-
542
mJ
[1]
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
[1]
Continuous current limited by package.
003aaj964
200
ID
(A)
03aa16
120
Pder
(%)
160
80
(1)
120
80
40
40
0
0
50
100
150
Tmb (° C)
(1) Capped at 120A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
PSMN4R8-100BSE
Product data sheet
0
200
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
IAL
(A)
003aaj965
103
102
(1)
(2)
10
1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
003aaj966
104
ID
(A)
103
Limit RDSon= V DS / ID
tp =10 µ s
102
100 µ s
1 ms
10
DC
10 ms
100 ms
1
10-1
10-1
Fig. 4.
1
10
102
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.3
0.37
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-
50
-
K/W
PSMN4R8-100BSE
Product data sheet
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
003aaj353
1
Zth(j-mb)
(K/W)
10
δ = 0.5
-1
0.2
0.1
0.05
10
-2
P
0.02
tp
single shot
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
tp
T
δ=
t
T
10-1
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
3
4
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
-
-
4.6
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.16
10
µA
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
4.1
4.8
mΩ
-
-
8.7
mΩ
-
-
13
mΩ
0.43
0.85
1.7
Ω
Static characteristics
V(BR)DSS
VGS(th)
VGSth
Fig. 10; Fig. 11
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
RG
gate resistance
PSMN4R8-100BSE
Product data sheet
f = 1 MHz
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
196
278
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
166.9
234
nC
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
40
56
nC
QGD
gate-drain charge
Fig. 14; Fig. 15
-
59
83
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
-
4.3
-
V
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
-
10665 14400 pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
674
910
pF
Crss
reverse transfer
capacitance
-
459
643
pF
td(on)
turn-on delay time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
-
41
61.5
ns
tr
rise time
RG(ext) = 4.7 Ω
-
65
97.5
ns
td(off)
turn-off delay time
-
127
190.5
ns
tf
fall time
-
69
103.5
ns
Dynamic characteristics
QG(tot)
total gate charge
Fig. 14; Fig. 15
QGS
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.79
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
72
94
ns
recovered charge
VDS = 50 V
-
227
296
nC
Qr
003aaj968
120
10 6
ID
(A)
5.5
003aaj969
20
RDSon
(mΩ )
15
80
5
10
40
4.5
5
VGS (V) = 4
0
Fig. 6.
0
1
2
0
3 V (V) 4
DS
0
Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values
PSMN4R8-100BSE
Product data sheet
8
12 V (V) 16
GS
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
003aaj970
200
003aaj971
300
ID
(A)
gfs
(S)
160
240
120
180
80
120
40
60
0
0
0
Fig. 8.
Tj = 25 °C
Tj = 150 ° C
60
120
180
240
ID (A)
300
0
Forward transconductance as a function of
drain current; typical values
Fig. 9.
03aa35
10- 1
ID
(A)
min
10- 2
typ
4
2
10- 5
1
4
VGS (V)
0
- 60
6
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
PSMN4R8-100BSE
Product data sheet
003aad280
VGS(th)
(V)
max
10- 4
2
6 V (V) 8
GS
5
3
0
4
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
10- 3
10- 6
2
max
typ
min
0
60
120
Tj (°C)
180
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
003aaj974
30
4.5
RDSon
(mΩ )
5
003aad774
3.2
5.5
a
2.4
20
1.6
10
6
0.8
V GS (V) = 10
0
0
40
80
ID (A)
0
-60
120
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
60
120
ID
003aaj976
8
VGS(pl)
20 V
80 V
6
VGS(th)
VGS
VDS = 50V
4
QGS1
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
VDS
Tj (°C)
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 14. Gate charge waveform definitions
0
50
100
150
200
250
Q G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN4R8-100BSE
Product data sheet
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
003aaj977
105
003aaj978
120
IS
(A)
C
(pF)
C iss
104
80
C oss
103
Tj = 175 °C
40
Tj = 25 ° C
C rss
102
0
10-1
1
10
2
VDS (V) 10
0
0.3
0.6
0.9 V (V) 1.2
SD
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values
PSMN4R8-100BSE
Product data sheet
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
11. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
b2
c
b
e
e
Q
0
5 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
b
b2
c
4.5
1.40 0.85 1.45 0.64
4.1
1.27 0.60 1.05 0.46
D
D1
E
11
1.6
10.3
1.2
9.7
e
2.54
HD
Lp
Q
15.8
2.9
2.6
14.8
2.1
2.2
sot404_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
06-03-16
13-02-25
SOT404
Fig. 18. Package outline D2PAK (SOT404)
PSMN4R8-100BSE
Product data sheet
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The product status of device(s) described in this document may have
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NXP Semiconductors does not give any representations or warranties as to
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12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
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PSMN4R8-100BSE
Product data sheet
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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may be subject to export control regulations. Export might require a prior
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In the event that customer uses the product for design-in and use in
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN4R8-100BSE
Product data sheet
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PSMN4R8-100BSE
NXP Semiconductors
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 April 2013
PSMN4R8-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2013
© NXP B.V. 2013. All rights reserved
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