Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 ■ Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) 2SA0683 Symbol Rating Unit VCBO −30 V −60 2SA0684 0.45+0.2 –0.1 0.45+0.2 –0.1 −25 V Collector-emitter voltage 2SA0683 (Base open) 2SA0684 VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1 A Peak collector current ICP −1.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (1.27) −50 (1.27) 1 2 3 (3.2) Parameter 2.54±0.15 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SA0683 Collector-emitter voltage (Base open) 2SA0683 Conditions VCBO IC = −10 µA, IE = 0 VCEO IC = −2 mA, IB = 0 VEBO IE = −10 µA, IC = 0 ICBO VCB = −20 V, IE = 0 V VCE = −5 V, IC = −1 A 50 Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA hFE2 fT Cob −5 85 hFE1 *2 Collector output capacitance (Common base, input open circuited) Unit V −25 VCE = −10 V, IC = −500 mA Forward current transfer ratio *1 Transition frequency Max −50 2SA0684 Collector-base cutoff current (Emitter open) Typ −30 −60 2SA0684 Emitter-base voltage (Collector open) Min V − 0.1 µA 340 − 0.2 − 0.4 V − 0.85 −1.20 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 VCB = −10 V, IE = 0, f = 1 MHz 20 V MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2004 SJC00001CED 1 2SA0683, 2SA0684 PC Ta IC VCE IB = −10 mA −9 mA −8 mA −1.0 −7 mA −6 mA − 0.75 0.6 −5 mA −4 mA −3 mA − 0.50 0.4 −2 mA − 0.25 0.2 0 80 120 160 −2 0 −1 Ta = 75°C 25°C −10 2 Ta = −25°C − 0.1 25°C −1 80 40 100 50 600 −12 VCE = −10 V 400 Ta = 75°C 300 25°C 200 −25°C 100 0 − 0.01 − 0.1 −1 −10 VCER RBE 30 20 10 −100 Collector-base voltage VCB (V) SJC00001CED −10 Collector current IC (A) IE = 0 f = 1 MHz Ta = 25°C −10 −8 500 −10 40 0 −1 −6 hFE IC 75°C − 0.01 − 0.01 Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 120 Emitter current IE (mA) −4 Base current IB (mA) Cob VCB 160 10 −2 0 Collector current IC (A) VCB = −10 V Ta = 25°C 1 0 −10 IC / IB = 10 −1 fT I E 0 −8 −10 Collector current IC (A) 200 −6 − 0.1 −25°C −1 −4 −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) −10 − 0.1 − 0.2 VBE(sat) IC IC / IB = 10 − 0.01 − 0.01 − 0.4 −1 mA VCE(sat) IC − 0.1 − 0.6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 − 0.8 Forward current transfer ratio hFE 40 −1.0 −120 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 VCE = −10 V Ta = 25°C Collector current IC (mA) Collector current IC (A) Collector power dissipation PC (W) 0.8 −1.2 Ta = 25°C −1.25 1.0 0 IC I B −1.5 1.2 IC = −10 mA Ta = 25°C −100 −80 −60 2SA0684 −40 2SA0683 −20 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) 2SA0683, 2SA0684 ICEO Ta 104 Safe operation area −10 VCE = −10 V Single pulse Ta = 25°C ICP Collector current IC (A) t = 10 ms IC t=1s −10−2 10 0 40 80 120 Ambient temperature Ta (°C) 160 −10−3 − 0.1 −1 −10 2SA0684 −10−1 102 1 −1 2SA0683 ICEO (Ta) ICEO (Ta = 25°C) 103 −100 Collector-emitter voltage VCE (V) SJC00001CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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