SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3 High DC current gain High collector current Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14 s1N 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 DC collector current IC 300 mA Peak collector current ICM 500 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 81 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CES 30 - - V(BR)CBO 30 - - V(BR)EBO 10 - - ICBO - - 100 nA ICBO - - 10 µA IEBO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V - hFE SMBTA13 5000 - - SMBTA14 10000 - - SMBTA13 10000 - - SMBTA14 20000 - - VCEsat - - 1.5 VBEsat - - 2 125 - - Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency fT MHz I C = 50 mA, V CE = 5 V, f = 20 MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 10 360 SMBTA 13/14 EHP00823 CCB0 (C EB0) mW 300 pF P tot 270 240 CCB0 210 5 180 C EB0 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 0 10 -1 °C 150 TS 10 1 VCB0 , (VEB0 ) 10 0 V Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V, f = 20MHz 10 3 SMBTA 13/14 EHP00824 Ptot max 5 Ptot DC 10 3 MHz tp tp D= T fT SMBTA 13/14 EHP00825 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 10 3 ΙC tp 3 Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 IC = f (VBEsat ), hFE = 1000 SMBTA 13/14 10 3 ΙC EHP00826 SMBTA 13/14 10 3 mA EHP00827 mA ΙC 150 ˚C 25 ˚C -50 ˚C 10 2 10 2 5 5 10 1 10 1 5 5 10 0 0 0.5 1.0 V 150 ˚C 25 ˚C -50 ˚C 10 0 1.5 0 1.0 2.0 V CEsat DC current gain hFE = f (I C) VCB = 30V VCE = 5V 4 SMBTA 13/14 3.0 V BEsat Collector cutoff current ICBO = f (TA) 10 V EHP00828 nA 10 6 h FE Ι CB0 SMBTA 13/14 EHP00829 5 max 10 3 10 5 5 25 ˚C 5 typ 10 2 125 ˚C -55 ˚C 5 10 4 10 1 5 10 0 5 0 50 100 ˚C 10 3 10 -1 150 10 0 10 1 10 2 mA 10 3 ΙC TA 4 Feb-18-2002