Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm ● ● ● ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 100 mA Collector current IC 70 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Parameter Collector cutoff current 3.8±0.3 φ3.16±0.1 (TC=25˚C) Parameter ■ Electrical Characteristics 3.05±0.1 High collector to base voltage VCBO High collector to emitter VCEO Small collector output capacitance Cob TO-126 package, which is fitted to a heat sink without any insulation parts 3.2±0.2 1.9±0.1 ● 16.0±1.0 ■ Features 11.0±0.5 +0.5 8.0 –0.1 0.5±0.1 0.75±0.1 0.5±0.1 1.76±0.1 4.6±0.2 2.3±0.2 1 2 1:Emitter 2:Collector 3:Base JEDEC:TO–126(b) 3 (TC=25˚C) Symbol ICBO Conditions min typ VCB = 300V, IE = 0 Hot ICEO VCE = 380V, IB = 0, Ta = 80°C Collector to emitter voltage VCEO IC = 100µA, IB = 0 Emitter to base voltage VEBO IE = 1µA, IC = 0 7 Forward current transfer ratio hFE VCE = 10V, IC = 5mA 30 Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz max Unit 10 µA 10 µA 400 V V 150 1.2 50 80 4 V MHz 8 pF 1 Power Transistors 2SC5121 PC — Ta IC — VCE 2.4 IC — VBE 120 120 TC=25˚C 100 1.6 1.2 0.8 0.4 100 80 IB=1.2mA 1.0mA 0.8mA 60 0.6mA 0.4mA 40 0.2mA 20 0 40 80 120 160 2 6 8 10 12 0 1 VCE=10V 3000 1000 0.3 0.1 0.03 0.01 0.003 3 10 30 Collector current IC (mA) 100 300 100 30 10 3 1 0.1 0.6 0.8 1.0 1.2 Cob — VCB Collector output capacitance Cob (pF) 3 0.4 12 IC/IB=10 1 0.2 Base to emitter voltage VBE (V) hFE — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 4 10000 0.3 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.001 0.1 60 0 0 Ambient temperature Ta (˚C) 80 20 0 0 2 VCE=10V Collector current IC (mA) 2.0 Collector current IC (mA) Collector power dissipation PC (W) Without heat sink IE=0 f=1MHz TC=25˚C 10 8 6 4 2 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 300 1000 Collector to base voltage VCB (V)