Power Transistors 2SC3946 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 350 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7.5 V Peak collector current ICP 400 mA Collector current IC 200 mA Collector power TC=25°C dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 16.7±0.3 2.7±0.2 φ3.1±0.1 4.0 ● High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 1.4±0.1 Solder Dip ■ Features ● 10.0±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2.0 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 2 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 2 µA Collector to base voltage VCBO IC = 100µA, IE = 0 350 V VCEO IC = 5mA, IB = 0 300 V Collector to emitter voltage VCER IC = 100µA, IB = 0, RBE = 1kΩ 350 V Emitter to base voltage VCEO IE = 100µA, IC = 0 7.5 V 40 Forward current transfer ratio hFE VCB = 10V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCE = 30V, IC = 10mA, f = 1MHz Collector output capacitance Cob VCB = 50V, IE = 0, f = 1MHz 250 1 50 V MHz 5 pF 1 Power Transistors 2SC3946 PC — Ta IC — VCE 20 IC — VBE 200 240 TC=25˚C 12 8 4 0 IB=2.0mA 40 80 120 160 80 0.4mA 40 200 0.2mA 4 120 80 40 8 12 16 20 0 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) hFE — IC fT — IE 200 3 1 0.3 TC=100˚C –25˚C 0.1 25˚C 0.03 VCE=10V 1000 0.01 Transition frequency fT (MHz) IC/IB=10 10 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 160 0 0 Ambient temperature Ta (˚C) 25˚C 300 TC=100˚C 100 –25˚C 30 10 3 1 1 3 10 30 100 300 1 3 Collector current IC (mA) 10 30 100 300 Collector current IC (A) Cob — VCB 10 IE=0 f=1MHz TC=25˚C Collector current IC (A) 16 12 8 Single pulse TC=25˚C 3 1 ICP t=10ms 0.3 IC 0.1 1ms DC 0.03 0.01 4 0.003 0 0.001 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 VCB=30V f=1MHz TC=25˚C 160 120 80 40 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (A) Area of safe operation (ASO) 20 Collector output capacitance Cob (pF) 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 120 0 0 2 –25˚C 200 160 Collector current IC (mA) 16 VCE=10V 25˚C TC=75˚C Collector current IC (mA) Collector power dissipation PC (W) TC=Ta 1000 Collector to emitter voltage VCE (V)