PANASONIC 2SD2051

Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
Unit: mm
0.7±0.1
■ Absolute Maximum Ratings
16.7±0.3
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60±10
V
Collector to emitter voltage
VCEO
60±10
V
Emitter to base voltage
VEBO
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
5
V
ICP
2.5
A
IC
1.6
A
12
PC
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
W
2.0
4.2±0.2
φ3.1±0.1
4.0
●
14.0±0.5
●
High foward current transfer ratio hFE
Incorporating a built-in zener diode
Full-pack package which can be installed to the heat sink with
one screw
2.7±0.2
1.4±0.1
Solder Dip
●
5.5±0.2
7.5±0.2
■ Features
4.2±0.2
10.0±0.2
0.8±0.1
1.3±0.2
+0.2
0.5 –0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
150
˚C
–55 to +150
˚C
B
E
(TC=25˚C)
Symbol
Conditions
min
VCB = 25V, IE = 0
typ
max
Unit
1
µA
1
µA
70
V
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
Collector to base voltage
VCBO
IC = 100µA, IE = 0
50
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
50
70
V
Emitter to base voltage
VEBO
IE = 100µA, IC = 0
5
Forward current transfer ratio
hFE
*
VCE = 10V, IC = 1.0A
Collector to emitter saturation voltage
VCE(sat)
IC = 1.0A, IB = 1.0mA
Base to emitter saturation voltage
VBE(sat)
IC = 1.0A, IB = 1.0mA
Transition frequency
fT
VCE = 10V, IC = 10mA, f = 200MHz
*h
FE
4000
V
40000
1.5
2.2
200
V
V
MHz
Rank classification
Rank
hFE
Q
R
S
4000 to 10000 8000 to 20000 16000 to 40000
1
Power Transistors
2SD2051
IC — VCE
2
1
70µA
60µA
0.8
50µA
0.6
0.4
40µA
0.2
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
6
8
VBE(sat) — IC
Forward current transfer ratio hFE
25˚C
100˚C
0.3
0.1
0.03
0.3
1
1
105
25˚C
104
3
Collector current IC (A)
10
25˚C
TC=–25˚C
0.3 100˚C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
Cob — VCB
TC=100˚C
–25˚C
103
102
0.1
3
20
VCE=10V
10
0.01
0.01 0.03
10
hFE — IC
IC/IB=1000
TC=–25˚C
IC/IB=1000
30
Collector current IC (A)
106
30
1
12
100
Collector to emitter voltage VCE (V)
100
3
10
Collector output capacitance Cob (pF)
0
Base to emitter saturation voltage VBE(sat) (V)
90µA
80µA
1.0
3
0
2
VCE(sat) — IC
IB=100µA
TC=25˚C
Without heat sink
Collector current IC (A)
Collector power dissipation PC (W)
1.2
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
4
IE=0
f=1MHz
TC=25˚C
18
16
14
12
10
8
6
4
2
0
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
10
1
3
10
30
100
Collector to base voltage VCB (V)