Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.0V G @VGE = 15V, IC = 35A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 60 35 120 120 25 120 10 ± 20 200 78 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-399 To Order Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.64 0.83 — 40 — Units °C/W g (oz) Revision 2 Previous Datasheet Index Next Data Sheet IRGPC50MD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.62 — V/°C VGE = 0V, IC = 1.0mA — 1.8 2.0 IC = 35A V GE = 15V — 2.3 — V IC = 60A See Fig. 2, 5 — 2.0 — IC = 35A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -14 — mV/°C VCE = VGE, IC = 250µA 11 20 — S VCE = 100V, I C = 35A — — 250 µA VGE = 0V, V CE = 600V — — 6500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 25A See Fig. 13 — 1.2 1.5 IC = 25A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — 10 Typ. 120 25 40 78 110 340 265 2.1 4.0 6.1 — — — — — — — — — — — — — — — — — — 80 110 610 440 9.4 13 2900 230 30 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 180 IC = 35A 38 nC VCC = 400V 60 See Fig. 8 — TJ = 25°C — ns IC = 35A, V CC = 480V 510 VGE = 15V, R G = 5.0Ω 400 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 9.5 — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 5.0Ω, VCPK < 500V — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 35A, V CC = 480V — VGE = 15V, R G = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 I F = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 V R = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-400 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPC50MD2 40 D u ty cycle: 5 0% TJ = 12 5 °C T s in k = 90 °C G at e drive a s sp e cif ie d T urn -on lo sses in clud e 30 e ff ects of reve rse reco ve ry Pow er Diss ipa tion = 40 W 20 10 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 10 00 100 IC , C ollector-to-E m itte r C urrent (A ) I C , Co llector-to-E m itter C urrent (A) 1000 2 5 °C 1 50°C 10 1 00 15 0°C 2 5°C 10 V GE = 15 V 2 0 µ s P U L S E W ID T H 1 0.1 1 V CC = 1 0 0V 5µ s P U L S E W ID TH 1 10 5 10 15 V G E , G a te-to-E m itter V o ltage (V ) V C E , C olle ctor-to-Em itter Voltage (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-401 To Order 20 Previous Datasheet Index Next Data Sheet IRGPC50MD2 3.5 V GE = 1 5 V V C E , Co llector-to-E m itter V oltag e (V) M axim um D C C ollector C urrent (A ) 60 50 40 30 20 10 V GE = 1 5V 8 0 µ s P U L S E W ID TH I C = 7 0A 3.0 2.5 I C = 3 5A 2.0 IC = 17A 1.5 1.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -4 0 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem pe rature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herma l R espo nse (Z thJ C ) 1 D = 0 .5 0 0.2 0 0.1 0.1 0 PD M 0 .05 t S IN G LE PU L SE (TH ER MA L R ES PO N S E) 0.0 2 t2 N o te s : 1 . D u ty f ac t or D = t 0.0 1 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-402 To Order 10 Previous Datasheet Index Next Data Sheet IRGPC50MD2 20 6 0 00 C , C a pa citan ce (pF ) 5 0 00 V G E , G ate-to-E m itter Voltag e (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc Cies 4 0 00 Coes 3 0 00 2 0 00 Cres 1 0 00 V CE = 4 00 V I C = 3 5A 16 12 8 4 0 0 1 10 0 100 30 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC T otal S w itching Losses (m J) 6 .5 90 1 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 = 48 0V = 15V = 25 °C = 3 5A T o tal S w itc hing Los se s (m J) 6 .6 60 Q G , Total G ate C harge (nC ) V C E , C ollector-to-Em itter V oltage (V ) 6 .4 6 .3 6 .2 RG = 5 Ω V G E = 15 V V C C = 4 80 V I C = 70 A I C = 3 5A 10 I C = 1 7A 6 .1 6 .0 A 1 0 10 20 30 40 50 60 -60 R G , G ate R esistance (Ω ) -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 Fig. 10 - Typical Switching Losses vs. Case Temperature C-403 To Order Previous Datasheet Index Next Data Sheet IRGPC50MD2 20 1000 =5Ω = 150 °C = 4 80 V = 15 V I , C ollector-to-E m itter C urrent (A ) RG TC V CC VGE 15 10 V GE G E= 2 0V T J = 12 5°C 100 S A F E O P E R A T IN G A R E A 10 C 5 A 0 0 20 40 60 1 1 80 10 100 V C E , Co lle ctor-to-E m itter V olta ge (V ) I C , C ollecto r-to-E m itter C urrent (A ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Sw itching Losses (m J) 25 TJ = 150°C TJ = 125°C 10 1 0.6 TJ = 25°C 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-404 To Order 1000 Previous Datasheet Index Next Data Sheet IRGPC50MD2 100 140 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 IF = 50A 80 I F = 50A I IRRM - (A) t rr - (ns) 100 I F = 25A I F = 25A 10 I F = 10A IF = 10A 60 40 20 100 1 100 1000 di f /dt - (A/µs) 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1500 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 1200 900 I F = 50A 600 IF = 25A 1000 IF = 10A I F = 25A 300 I F = 10A 0 100 IF = 50A 1000 di f /dt - (A/µs) 100 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-405 To Order Previous Datasheet Index Next Data Sheet IRGPC50MD2 90% Vge +Vge Same type device as D.U.T. Vce 430µF 80% of Vce 90% Ic 10% Vce Ic Ic D.U.T. 5% Ic td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS tr td(on) t1 5% Vce ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr t3 ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-406 To Order Section D - page D-13