Previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.9V G @VGE = 15V, IC = 25A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 1200 45 25 90 90 16 90 ± 20 200 78 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-293 To Order Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.64 0.83 — 40 — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet IRGPH50FD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 1200 — — V VGE = 0V, I C = 250µA — 1.1 — V/°C VGE = 0V, IC = 1.0mA — 2.1 2.9 IC = 25A V GE = 15V — 2.5 — V IC = 45A See Fig. 2, 5 — 3.0 — IC = 25A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -14 — mV/°C VCE = VGE, IC = 250µA 7.5 17 — S VCE = 100V, I C = 25A — — 250 µA VGE = 0V, V CE = 1200V — — 6500 VGE = 0V, V CE = 1200V, T J = 150°C — 2.5 3.0 V IC = 16A See Fig. 13 — 2.1 2.5 IC = 16A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 82 16 30 77 75 360 320 3.2 5.8 9.0 70 70 660 640 16.2 13 2400 140 28 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 100 IC = 25A 21 nC VCC = 400V 43 See Fig. 8 — TJ = 25°C — ns IC = 25A, V CC = 800V 540 VGE = 15V, R G = 5.0Ω 470 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 13.5 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 25A, V CC = 800V — VGE = 15V, R G = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 I F = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 V R = 200V 675 nC TJ = 25°C See Fig. 1838 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-294 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPH50FD2 Load Current (A) 30 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d riv e a s s p e ci fie d T u rn -o n lo s s e s in clu d e e ffe c ts o f re v e rs e r e c o v e ry P o w e r D is s ip a tio n = 4 0 W 20 6 0 % o f ra te d v o lta g e 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 1000 IC , C ollector-to-E mitter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) 10 00 TJ = 25 °C 1 00 TJ = 15 0°C 10 V G E = 1 5V 2 0µ s P U LS E W IDTH 1 1 100 TJ = 1 50 °C 10 TJ = 2 5 °C 1 V C C = 1 00 V 5 µ s P UL S E W IDTH 0.1 10 5 VC E , C o llector-to-Em itter V oltage (V) 10 15 V G E , G ate -to-E m itter V olta ge (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-295 To Order 20 Previous Datasheet Index Next Data Sheet IRGPH50FD2 4.0 V G E = 15 V V C E , C olle ctor-to-E m itte r V olta ge (V ) M aximum D C Collector Current (A ) 50 40 30 20 10 VG E = 1 5 V 80 µs P U L S E W ID TH I C = 50 A 3.0 I C = 25 A 2.0 I C = 1 3A 1.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herma l R espo nse (Z thJ C ) 1 D = 0.5 0 0.2 0 0.1 0.1 0 PD M 0 .0 5 t SIN G LE P U LSE (TH ER MA L R E SP O N SE ) 0.02 t2 N o te s : 1 . D u ty fa c to r D = t 0.01 0.01 0.00001 1 1 /t 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0 001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-296 To Order 10 Previous Datasheet Index Next Data Sheet IRGPH50FD2 50 0 0 V G E , G ate-to-Em itter V oltage (V ) 40 0 0 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 40 0 V I C = 2 5A 16 Cies 12 30 0 0 Coes 20 0 0 Cres 10 0 0 8 4 0 0 1 10 0 100 20 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC 60 80 100 = 800V = 15V = 25°C = 25A 9.4 9.2 9.0 8.8 RG = 5Ω V GE = 15V V CC = 800V I C = 50A I C = 25A 10 I C = 13A A 1 0 10 20 30 40 50 1 00 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 9.6 40 Q g , Total G ate C harge (nC ) 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) R G , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-297 To Order Previous Datasheet Index Next Data Sheet IRGPH50FD2 1000 = 5Ω = 150°C = 800V = 15V I C , C o llec to r-to-E m itter C urrent (A ) RG TC V CC V GE 30 20 10 0 10 20 30 40 50 VGGE E= 20 V T J = 12 5°C 100 A 0 S A FE O P E RA TING A RE A 10 1 1 60 10 100 1000 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 40 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-298 To Order 10000 Previous Datasheet Index Next Data Sheet IRGPH50FD2 300 40 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 30 200 I RRM - (A) trr - (ns) IF = 32A I F = 16A I F = 8.0A I F = 32A 20 I F = 16A 100 I F = 8.0A 10 0 100 0 100 1000 di f /dt - (A/µs) di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 900 600 di(rec)M/dt - (A/µs) Q RR - (nC) I F = 32A I F = 16A I F = 8.0A 100 I F = 32A I F =16A I F = 8.0A 300 0 100 1000 di f /dt - (A/µs) 10 100 Fig. 16 - Typical Stored Charge vs. dif/dt 1000 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-299 To Order Previous Datasheet Index Next Data Sheet IRGPH50FD2 90% Vge +Vge Same type device as D.U.T. Vce 430µF 80% of Vce 90% Ic 10% Vce Ic Ic D.U.T. 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ∫ t1+5µS Vce ic dt t1 ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Defining E on, td(on), tr Refer to Section D for the following: Appendix H: Section D - page D-10 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 -JEDEC Outline TO-247AC C-300 To Order Section D - page D-13