IRF IRGPH50FD2

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PD - 9.1120
IRGPH50FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Fast CoPack IGBT
Features
C
VCES = 1200V
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 2.9V
G
@VGE = 15V, IC = 25A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
VGE
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
1200
45
25
90
90
16
90
± 20
200
78
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-293
To Order
Min.
Typ.
Max.
—
—
—
—
—
—
—
0.24
—
6 (0.21)
0.64
0.83
—
40
—
Units
°C/W
g (oz)
Revision 1
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IRGPH50FD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
1200 —
—
V
VGE = 0V, I C = 250µA
—
1.1
—
V/°C VGE = 0V, IC = 1.0mA
—
2.1 2.9
IC = 25A
V GE = 15V
—
2.5
—
V
IC = 45A
See Fig. 2, 5
—
3.0
—
IC = 25A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-14
— mV/°C VCE = VGE, IC = 250µA
7.5
17
—
S
VCE = 100V, I C = 25A
—
—
250
µA
VGE = 0V, V CE = 1200V
—
— 6500
VGE = 0V, V CE = 1200V, T J = 150°C
—
2.5 3.0
V
IC = 16A
See Fig. 13
—
2.1 2.5
IC = 16A, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
82
16
30
77
75
360
320
3.2
5.8
9.0
70
70
660
640
16.2
13
2400
140
28
90
164
5.8
8.3
260
680
120
76
Max. Units
Conditions
100
IC = 25A
21
nC
VCC = 400V
43
See Fig. 8
—
TJ = 25°C
—
ns
IC = 25A, V CC = 800V
540
VGE = 15V, R G = 5.0Ω
470
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
See Fig. 9, 10, 11, 18
13.5
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 25A, V CC = 800V
—
VGE = 15V, R G = 5.0Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
135
ns
TJ = 25°C See Fig.
245
TJ = 125°C
14
I F = 16A
10
A
TJ = 25°C See Fig.
15
TJ = 125°C
15
V R = 200V
675
nC
TJ = 25°C See Fig.
1838
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 5.0Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-294
To Order
Pulse width 5.0µs,
single shot.
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IRGPH50FD2
Load Current (A)
30
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T s in k = 9 0 ° C
G a te d riv e a s s p e ci fie d
T u rn -o n lo s s e s in clu d e
e ffe c ts o f re v e rs e r e c o v e ry
P o w e r D is s ip a tio n = 4 0 W
20
6 0 % o f ra te d
v o lta g e
10
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
IC , C ollector-to-E mitter C urrent (A )
I C , C ollector-to-E mitter C urrent (A )
10 00
TJ = 25 °C
1 00
TJ = 15 0°C
10
V G E = 1 5V
2 0µ s P U LS E W IDTH
1
1
100
TJ = 1 50 °C
10
TJ = 2 5 °C
1
V C C = 1 00 V
5 µ s P UL S E W IDTH
0.1
10
5
VC E , C o llector-to-Em itter V oltage (V)
10
15
V G E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-295
To Order
20
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IRGPH50FD2
4.0
V G E = 15 V
V C E , C olle ctor-to-E m itte r V olta ge (V )
M aximum D C Collector Current (A )
50
40
30
20
10
VG E = 1 5 V
80 µs P U L S E W ID TH
I C = 50 A
3.0
I C = 25 A
2.0
I C = 1 3A
1.0
0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
1 00 120 140 160
TC , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herma l R espo nse (Z thJ C )
1
D = 0.5 0
0.2 0
0.1
0.1 0
PD M
0 .0 5
t
SIN G LE P U LSE
(TH ER MA L R E SP O N SE )
0.02
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.01
0.00001
1
1
/t
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0 001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D ura tion (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-296
To Order
10
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IRGPH50FD2
50 0 0
V G E , G ate-to-Em itter V oltage (V )
40 0 0
C, C apacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
V C E = 40 0 V
I C = 2 5A
16
Cies
12
30 0 0
Coes
20 0 0
Cres
10 0 0
8
4
0
0
1
10
0
100
20
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
60
80
100
= 800V
= 15V
= 25°C
= 25A
9.4
9.2
9.0
8.8
RG = 5Ω
V GE = 15V
V CC = 800V
I C = 50A
I C = 25A
10
I C = 13A
A
1
0
10
20
30
40
50
1 00
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
9.6
40
Q g , Total G ate C harge (nC )
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-297
To Order
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IRGPH50FD2
1000
= 5Ω
= 150°C
= 800V
= 15V
I C , C o llec to r-to-E m itter C urrent (A )
RG
TC
V CC
V GE
30
20
10
0
10
20
30
40
50
VGGE E= 20 V
T J = 12 5°C
100
A
0
S A FE O P E RA TING A RE A
10
1
1
60
10
100
1000
V C E , C o lle cto r-to-E m itte r V olta g e (V )
I C , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
40
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-298
To Order
10000
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IRGPH50FD2
300
40
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
30
200
I RRM - (A)
trr - (ns)
IF = 32A
I F = 16A
I F = 8.0A
I F = 32A
20
I F = 16A
100
I F = 8.0A
10
0
100
0
100
1000
di f /dt - (A/µs)
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
900
600
di(rec)M/dt - (A/µs)
Q RR - (nC)
I F = 32A
I F = 16A
I F = 8.0A
100
I F = 32A
I F =16A
I F = 8.0A
300
0
100
1000
di f /dt - (A/µs)
10
100
Fig. 16 - Typical Stored Charge vs. dif/dt
1000
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-299
To Order
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IRGPH50FD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
430µF
80%
of Vce
90% Ic
10% Vce
Ic
Ic
D.U.T.
5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
∫
t1+5µS
Vce ic dt
t1
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Defining E on, td(on), tr
Refer to Section D for the following:
Appendix H: Section D - page D-10
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 3 -JEDEC Outline TO-247AC
C-300
To Order
Section D - page D-13