Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.1V G @VGE = 15V, IC = 31A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 31 17 120 120 12 120 ± 20 100 42 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-101 To Order Min. Typ. Max. — — — — — — — 0.50 — 2 (0.07) 1.2 2.5 — 80 — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet IRGBC30FD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 250µA — 0.69 — V/°C VGE = 0V, IC = 1.0mA — 1.8 2.1 IC = 17A VGE = 15V — 2.4 — V IC = 31A See Fig. 2, 5 — 2.2 — IC = 17A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 6.1 10 — S VCE = 100V, IC = 17A — — 250 µA VGE = 0V, VCE = 600V — — 2500 VGE = 0V, VCE = 600V, T J = 150°C — 1.4 1.7 V IC = 12A See Fig. 13 — 1.3 1.6 IC = 12A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 27 4.1 12 72 75 300 220 0.9 2.1 3.0 70 75 420 480 4.7 7.5 660 100 10 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 30 IC = 17A 5.9 nC VCC = 400V 15 See Fig. 8 — TJ = 25°C — ns IC = 17A, VCC = 480V 450 VGE = 15V, RG = 23Ω 350 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 4.6 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 17A, VCC = 480V — VGE = 15V, RG = 23Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 V R = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-102 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGBC30FD2 20 Du ty c ycle: 5 0 % TJ = 1 2 5 °C T s in k = 9 0 °C Ga te d rive as sp e cified Tu rn -on lo sses in clud e effe cts o f re verse rec ove ry Po we r D issipatio n = 2 1W Load Current (A) 16 12 6 0 % o f ra te d v o lta g e 8 4 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 10 00 IC , C ollector-to-E m itter Current (A ) I C , C ollector-to-E mitter C urrent (A ) 1000 TJ = 25 °C 100 TJ = 15 0°C 10 V G E = 1 5V 2 0µ s P U LS E W IDTH 1 1 1 00 T J = 15 0°C 10 T J = 25 °C 1 V C C = 1 00 V 5 µs P UL S E W ID TH 0.1 10 5 10 15 V G E , G ate-to-E m itter V olta g e (V ) V C E , C ollector-to-E m itter V oltage (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-103 To Order 20 Previous Datasheet Index Next Data Sheet IRGBC30FD2 3.5 V G E = 15 V V C E , C ollector-to-E m itter V oltage (V ) M ax im um D C C ollec tor C urrent (A ) 40 30 20 10 0 VG E = 1 5 V 80 µs P UL S E W ID TH 3.0 I C = 34 A 2.5 I C = 17 A 2.0 I C = 8.5A 1.5 1.0 25 50 75 100 125 150 -60 T C , C a s e Te m p e ra tu re (°C ) -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 PD M 0 .1 0 0.1 t 0 .0 5 0 .0 2 0 .0 1 0.01 0.00001 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-104 To Order 10 Previous Datasheet Index Next Data Sheet IRGBC30FD2 20 1 4 00 1 2 00 V G E , G ate-to-E m itter V oltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 1 0 00 C , C a pac itanc e (pF ) V C E = 40 0 V I C = 1 7A Cies 12 8 00 Coes 6 00 4 00 Cres 2 00 8 4 0 0 1 10 0 10 0 5 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC 100 = 480V = 15V = 25°C = 17A 3.06 3.02 2.98 A 2.94 0 10 20 30 40 50 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 3.10 10 Q g , Total G ate C harge (nC ) V C E , C o lle c to r-to -E m itte r V o lta g e (V ) 60 RG = 23Ω V GE = 15V V CC = 480V I C = 34A 10 I C = 17A I C = 8.5A 1 0.1 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) RG , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-105 To Order Previous Datasheet Index Next Data Sheet IRGBC30FD2 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) RG = 23Ω T C = 150°C V CC = 480V V GE = 15V 9 6 3 A 0 0 10 20 30 VGGE E= 20 V T J = 125 °C 100 S A FE O P E RA TIN G A RE A 10 1 1 40 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 12 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-106 To Order 1000 Previous Datasheet Index Next Data Sheet IRGBC30FD2 100 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) IF = 24A I F = 12A 80 IF = 6.0A I F = 24A I F = 12A 10 IF = 6.0A 40 0 100 1 100 1000 di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 10000 600 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C Q RR - (nC) 400 I F = 24A I F = 12A 200 1000 IF = 6.0A IF = 12A 100 IF = 24A IF = 6.0A 0 100 di f /dt - (A/µs) 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt 10 100 1000 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-107 To Order Previous Datasheet Index Next Data Sheet IRGBC30FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce D.U.T. td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS tr td(on) t1 5% Vce ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 1 - JEDEC Outline TO-220AB C-108 To Order Section D - page D-12