BFR380F NPN Silicon RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz 2 3 1 • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5V supply voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380F Marking FCs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature T Stg -65 ... 150 V mA TS ≤ 95°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 145 K/W 1T S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2For 1 2010-09-13 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 6 9 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, I B = 0 Collector-emitter cutoff current nA ICES VCE = 5 V, V BE = 0 - 1 30 VCE = 15 V, VBE = 0 - - 1000 ICBO - - 30 IEBO - 1 500 hFE 90 120 160 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 40 mA, VCE = 3 V, pulse measured 2 2010-09-13 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.5 0.7 Cce - 0.2 - Ceb - 1 - GHz IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz - 1.1 - IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz - 1.6 - - 13.5 - - 9.5 - Power gain, maximum available 1) G ma IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 3 GHz |S21e|2 Transducer gain dB IC = 40 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1.8 GHz - 11 - f = 3 GHz - 7 - - 29 - ZS=ZL=50 Ω - 17 - ZS = ZSopt, ZL = ZLopt - 19.5 - Third order intercept point at output2) IP 3 dBm VCE = 3 V, I C = 40 mA, Z S=ZL=50 Ω, f = 1.8 GHz 1dB compression point at output P-1dB IC = 40 mA, VCE = 3V, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2010-09-13 BFR380F Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 400 mW K/W RthJS Ptot 300 250 10 2 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= ƒ(VCB) Ptotmax/P totDC = ƒ(tp) f = 1MHz 10 1 1.6 Ptotmax/PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ccb 1.2 1 0.8 0.6 0.4 0.2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 V 16 VCB 4 2010-09-13 BFR380F Third order Intercept Point IP3=ƒ(IC) Third order Intercept Point IP3 = ƒ (IC) (Output, ZS=ZL=50Ω) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 1.8GHz VCE = parameter, f = 900 MHz 32 dBm 28 4V 26 3V IP3 24 22 2V 20 18 16 1V 14 12 10 8 6 4 0 10 20 30 40 50 60 70 mA 90 IC Transition frequency fT= ƒ(IC) f = 1GHz Power gain Gma, Gms = ƒ(IC) f = 1.8GHz VCE = parameter VCE = parameter 16 15 GHz dB 5V 5V 14 3V 12 2V 13 3V G fT 13 11 10 12 2V 11 1V 9 10 8 1V 0.7V 7 9 6 0.7V 8 5 4 0 10 20 30 40 50 60 70 7 0 80 mA 100 IC 10 20 30 40 50 60 70 80 mA 100 IC 5 2010-09-13 BFR380F Power Gain Gma, Gms = ƒ(f) Power Gain |S21|² = ƒ(f) VCE = parameter VCE = parameter 45 dB 40 Ic = 40mA dB 35 Ic = 40mA 30 30 25 G G 5V 2V 1V 0.7V 5V 2V 1V 0.7V 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 GHz 0 0 4.5 0.5 1 1.5 2 2.5 3.5 GHz 3 f 4.5 f Power Gain Gma, Gms = ƒ(VCE): Power gain Gma, Gms = ƒ (I C) VCE = 3V |S21|² = ƒ(VCE): - - - f = parameter f = parameter 22 21 dB Ic = 40mA dB 0.9GHz 19 0.9GHz 19 18 0.9GHz 17 17 G G 16 15 14 15 13 1.8GHz 1.8GHz 13 12 11 2.4GHz 1.8GHz 11 10 9 9 3GHz 7 4GHz 8 7 0 1 2 3 4 5 6 V 5 0 8 VCE 20 40 60 80 mA 120 IC 6 2010-09-13 BFR380F Minimum noise figure NF min = ƒ(IC) Noise figure F = ƒ(I C) VCE = 3V, ZS = ZSopt VCE = 3V, f = 1.8 GHz 3.5 4 3.5 3 3 2.5 2.5 F [dB] F [dB] 2 2 1.5 1.5 ZS = 50Ω f = 4GHz 1 f = 3GHz 1 f = 2.4GHz ZS = ZSopt f = 1.8GHz f = 0.9GHz 0.5 0.5 0 0 0 10 20 30 40 50 60 70 80 0 Ic [mA] 10 20 30 40 50 60 70 80 Ic [mA] Minimum noise figure NF min = ƒ(f) Source impedance for min. VCE = 3V, ZS = ZSopt noise figure vs. frequency VCE = 3 V, I C = 8.0mA/40.0mA 7 2010-09-13 BFR380F SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR380F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFR380F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2010-09-13 Package TSFP-3 BFR380F Package Outline 0.2 ±0.05 0.55 ±0.04 1 1.2 ±0.05 0.2 ±0.05 3 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.2 ±0.05 0.15 ±0.05 0.4 ±0.05 0.4 ±0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout (Example) Manufacturer BCR847BF Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 9 2010-09-13 BFR380F Datasheet Revision History: 13 September 2010 This datasheet replaces the revision from 20 May 2010. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 20 May 2010 Page Subject (changes since last revision) 5 @ 900 MHz OIP3 curve added 8 SPICE model parameters removed from the datasheet, respective link to the internet site added 10 2010-09-13 BFR380F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-09-13