BFS17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 Peak collector current, f = 10 MHz ICM 50 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 93 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 205 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jul-13-2001 BFS17W Electrical Characteristics a TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - DC characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-base cutoff current µA ICBO VCB = 10 V, IE = 0 - - 0.05 VCB = 25 V, IE = 0 - - 10 - - 100 Emitter-base cutoff current IEBO VEB = 2.5 V, IC = 0 DC current gain - hFE IC = 2 mA, VCE = 1 V 20 - 150 IC = 25 mA, VCE = 1 V 20 70 - - 0.1 0.4 Collector-emitter saturation voltage VCEsat V IC = 10 mA, IB = 1 mA 2 Jul-13-2001 BFS17W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. AC characteristics Transition frequency GHz fT IC = 2 mA, VCE = 5 V, f = 200 MHz 1 1.4 - IC = 25 mA, VCE = 5 V, f = 200 MHz 1.3 2.5 - Ccb - 0.6 0.8 Cce - 0.26 - Cibo - 1.45 - Cobs - - 1.5 F - 3.5 5 |S21e|2 - 12.7 - V01=V02 - 100 - mV IP3 - 23 - dBm Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure dB IC = 2 mA, VCE = 5 V, f = 800 MHz, ZS = 0 Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50 , f = 500 MHz Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point IC = 14 mA, VCE = 5 V, ZS = ZL = 50 , f = 800 MHz 3 Jul-13-2001 BFS17W Total power dissipation Ptot = f(TS) 320 mW P tot 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 3 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 tp 4 Jul-13-2001 0 BFS17W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.3 3.0 pF 1.1 10V GHz 5V 3V 0.9 2.0 fT Ccb 1.0 0.8 2V 0.7 1.5 0.6 0.5 1.0 0.4 0.3 1V 0.5 0.2 0.7V 0.1 0.0 0 4 8 12 16 20 V 0.0 0 26 VCB 5 10 15 20 mA 30 IC 5 Jul-13-2001