PHILIPS BLW85

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW85
HF/VHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
BLW85
Matched hFE groups are available on
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
f
MHz
PL
W
η
%
Gp
dB
>
c.w. (class-B)
12,5
175
45
s.s.b. (class-AB)
12,5
1,6−28
3−30 (P.E.P.)
4,5
typ. 19,5
PIN CONFIGURATION
>
75
zi
Ω
ZL
Ω
1,4 + j1,5
2,7−j1,3
−
−
−
typ. −33
typ. 35
PINNING - SOT123
PIN
halfpage
1
d3
dB
4
c
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
b
e
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16 V
Emitter-base voltage (open-collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
9 A
Collector current (peak value); f > 1 MHz
ICM
max.
22 A
R.F. power dissipation up to (f > 1 MHz); Tmb = 25 °C
Prf
max.
105 W
Storage temperature
Tstg
Operating junction temperature
Tj
120
rf
(W)
100
handbook,
P halfpage
handbook, halfpage
IC
(A)
200 °C
max.
MGP613
MGP612
10
−65 to + 150 °C
short-time
operation
during mismatch
continuous
r.f. operation
derate by
0.58 W/K
Tmb = 25 °C
Th = 70 °C
80
60
continuous
d.c. operation
derate by 0.43 W/K
40
20
1
1
10
VCE (V)
0
102
0
50
100
Th (°C)
150
Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f ≥ 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 30 W; Tmb = 79 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
2,5 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
1,8 K/W
From mounting base to heatsink
Rth mb-h
=
0,3 K/W
March 1993
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR) CES
>
36 V
V(BR) CEO
>
16 V
V(BR)EBO
>
4 V
ICES
<
25 mA
open base
ESBO
>
8 mJ
RBE = 10 Ω
ESBR
>
8 mJ
VBE = 0; IC = 50 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
Emitter-base breakdown voltage
open collector; IE = 25 mA
Collector cut-off current
VBE = 0; VCE = 18 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current
gain(1)
typ.
IC = 4 A; VCE = 5 V
hFE
50
10 to 80
D.C. current gain ratio of matched devices(1)
hFE1/hFE2
<
1,2
VCEsat
typ.
1,5 V
4 A; VCB = 12,5 V
fT
typ.
650 MHz
−IE = 12,5 A; VCB = 12,5 V
fT
typ.
600 MHz
Cc
typ.
120 pF
IC = 200 mA; VCE = 15 V
Cre
typ.
82 pF
Collector-flange capacitance
Ccf
typ.
2 pF
IC = 4 A; VCE = 5 V
Collector-emitter saturation
voltage(1)
IC = 12,5 A; IB = 2,5 A
Transition frequency at f = 100
−IE =
MHz(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 15 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
March 1993
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP614
100
handbook, halfpage
MGP615
300
handbook, halfpage
typical values Tj = 25 °C
hFE
IE = Ie = 0
f = 1 MHz
Cc
(pF)
75
VCE = 12.5 V
200
5V
typ
50
100
25
0
0
0
5
10
IC (A)
15
0
10
20
VCB (V)
Fig.5 Tj = 25 °C.
Fig.4
MGP616
750
handbook, full pagewidth
fT
(MHz)
typical values
f = 100 MHz
Tj = 25 °C
VCB = 12.5 V
10 V
500
5V
250
0
0
5
10
Fig.6
March 1993
5
15
−IE (A)
20
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
ZL (Ω)
175
12,5
45
< 16
> 4,5
< 4,8
> 75
1,4 + j1,5
2,7 − j1,3
175
13,5
45
−
typ. 6,0
−
typ. 75
−
−
,,
,, ,,
handbook, full pagewidth
L5
C3a
C1
L1
C6a
C7
L7
50 Ω
L4
50 Ω
C6b
T.U.T.
C2
C3b
L2
C8
L6
C4
C5
R1
R2
L3
L8
+VCC
MGP604
Fig.7 Test circuit; c.w. class-B.
List of components:
C1
= 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2
= C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4
= 120 pF ceramic capacitor (500 V)
C5
= 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7
= 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1
= 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2
= 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3
= L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4
= L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6
= 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm
L7
= 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
= 10 Ω (±10%) carbon resistor (0,25 W)
R2
= 4,7 Ω (±5%) carbon resistor (0,25 W)
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
March 1993
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
150
handbook, full pagewidth
72
1888MJK
L3
L8
+VCC
C4
R1
L2
C1
C2
C5
C3a
L6
R2
C6a
L5
L1
C7
L4
C8
L7
C6b
C3b
1888MJK
rivet
MGP605
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.
March 1993
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP617
MGP618
100
handbook, halfpage
10
100
Gp
(dB)
η
(%)
handbook, halfpage
PL
(W)
75
η
Th = 25 °C
50
Gp
5
50
Th = 70 °C
25
0
0
Fig.9
10
20
PS (W)
10
60
handbook, halfpage
PLnom
(W)
(VSWR = 1)
VSWR =
4
5
20
50
PS
PSnom
30
1.1
1.2
VCE
VCEnom
1.3
Fig.11 R.F. SOAR; (short-time operation during
mismatch); f = 175 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W ;
VCEnom = 12,5 V or 13,5 V; PS = PSnom at
VCEnom and VSWR =1 measured in the
circuit of Fig.7.
March 1993
50
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
10
1
PL (W)
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
MGP619
40
30
Fig.10 Typical values; f = 175 MHz ;Th = 25 °C;
 VCE = 12,5 V; - - - VCE = 13,5 V.
Typical values; f = 175 MHz;
 VCE = 12,5 V; - - - VCE = 13,5 V.
50
0
0
30
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP620
2
handbook, halfpage
MGP621
4
handbook, halfpage
ri
ri, xi
(Ω)
RL, XL
(Ω)
xi
RL
0
2
−2
0
XL
−4
0
100
f (MHz)
−2
200
Typical values; VCE = 12,5 V; PL = 45 W;
class-B operation; Th = 25 °C
MGP622
20
Gp
(dB)
10
0
f (MHz)
200
Typical values; VCE = 12,5 V; PL = 45 W;
class-B operation; Th = 25 °C
Fig.14
March 1993
f (MHz)
200
Fig.13 Load impedance (series components).
handbook, halfpage
100
100
Typical values; VCE = 12,5 V; PL = 45 W;
class-B operation; Th = 25 °C
Fig.12 Input impedance (series components).
0
0
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
R.F. performance in s.s.b. class-AB operation
VCE = 12,5 V; Th up to 25 °C; Rth mb-h ≤ 0,3 K/W
f1 = 28,000 MHz; f2 = 28,001 Mhz
OUTPUT POWER
W
Gp
dB
ηdt
%
d3
dB(1)
d5
dB(1)
IC(ZS)
mA
3 to 30 (P.E.P.)
typ. 19,5
typ. 35
typ. −33
typ. −36
25
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C10
handbook, full pagewidth
L4
C1
L1
RS =
RL =
50 Ω
T.U.T.
50 Ω
C11
C2
C3
L2
C4
+VB = 12.5 V
R3
C6
R1
C13
L3
C14
C12
C5
C7
R5
C8
TR2
C9
C16
R2
R6
R4
C15
Fig.15 Test circuit; s.s.b. class-AB.
March 1993
+VB = 12.5 V
MGP623
bias
TR1
L5
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
List of components:
TR1 = TR2 = BD137
C1
= 100 pF air dielectric trimmer (single insulated rotor type)
C2
= 27 pF ceramic capacitor (500 V)
C3
= 180 pF polystyrene capacitor
C4
= 100 pF air dielectric trimmer (single non-insulated rotor type)
C5
= C7 = 3,9 nF polyester capacitor
C6
= 2 × 270 pF polystyrene capacitors in parallel
C8
= C15 = C16 = 100 nF polyester capacitor
C9
= 2,2 µF moulded metallized polyester capacitor
C10 = 2 × 385 pF (sections in parallel) film dielectric trimmer
C11 = 68 pF ceramic capacitor (500 V)
C12 = 2 × 82 pF ceramic capacitors in parallel (500 V)
C13 = 47 pF ceramic capacitor (500 V)
C14 = 385 pF film dielectric trimmer
L1
= 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2 × 5 mm
L2
= L5 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L3
= 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2 × 5 mm
L4
= 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2 × 5 mm
R1
= 27 Ω (±5%) carbon resistor (0,5 W)
R2
= 4,7 Ω (±5%) carbon resistor (0,25 W)
R3
= 1,5 kΩ (±5%) carbon resistor (0,5 W)
R4
= 10 Ω wirewound potentiometer (3 W)
R5
= 47 Ω wirewound resistor (5,5 W)
R6
= 150 Ω (±5%) carbon resistor (0,25 W)
March 1993
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP624
−20
MGP625
40
handbook, halfpage
double-tone efficiency versus
handbook, halfpage
intermodulation distortion versus
output power
output power *
ηdt
(%)
d3, d5
(dB)
typ
d3
−40
20
d5
−60
0
0
20
P.E.P. (W)
40
0
VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th = 25 °C;
Rth mb-h ≤ 0,3 °K/W; IC(ZS) = 25 mA; typical values.
20
P.E.P. (W)
40
VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th = 25 °C;
Rth mb-h ≤ 0,3 °K/W; IC(ZS) = 25 mA; typical values.
Fig.16
Fig.17
MGP626
−20
handbook, halfpage
intermodulation distortion versus
output power *
MGP627
40
handbook, halfpage
double-tone efficiency versus
d3, d5
output power
(dB)
ηdt
(%)
d3
typ
−40
d5
−60
0
20
20
P.E.P. (W)
40
0
VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C;
Rth mb-h ≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values.
0
P.E.P. (W)
40
VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C;
Rth mb-h ≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values.
* Stated intermodulation distortion figures are referred to
the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures
should be increased by 6 dB.
Fig.18
March 1993
20
Fig.19
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP628
30
MGP629
10
handbook, halfpage
handbook, halfpage
xi
(Ω)
ri
(Ω)
Gp
(dB)
ri
7.5
20
5
2.5
5
0
−2.5
2.5
xi
10
1
10
f (MHz)
0
102
1
Fig.20 Power gain as a function of frequency.
10
f (MHz)
Fig.21 Input impedance (series components) as a
function of frequency.
Fig. 20 and 21 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation.
Conditions:
VCE = 12, 5 V
VCE = 13, 5 V
PL = 30 W (P.E.P.)
PL = 35 W (P.E.P.)
Th = 25 °C
Th = 25 °C
Rth mb-h ≤ 0,3 K/W
Rth mb-h ≤ 0,3 K/W
IC(ZS) = 25 mA
IC(ZS) = 25 mA
ZL = 1,8 Ω
ZL = 1,8 Ω
March 1993
−5
102
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
March 1993
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
14
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
15