DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. BLW85 Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION VCE V f MHz PL W η % Gp dB > c.w. (class-B) 12,5 175 45 s.s.b. (class-AB) 12,5 1,6−28 3−30 (P.E.P.) 4,5 typ. 19,5 PIN CONFIGURATION > 75 zi Ω ZL Ω 1,4 + j1,5 2,7−j1,3 − − − typ. −33 typ. 35 PINNING - SOT123 PIN halfpage 1 d3 dB 4 c DESCRIPTION 1 collector 2 emitter 3 base 4 emitter handbook, halfpage b e MBB012 2 3 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification HF/VHF power transistor BLW85 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max. 36 V Collector-emitter voltage (open base) VCEO max. 16 V Emitter-base voltage (open-collector) VEBO max. 4 V Collector current (average) IC(AV) max. 9 A Collector current (peak value); f > 1 MHz ICM max. 22 A R.F. power dissipation up to (f > 1 MHz); Tmb = 25 °C Prf max. 105 W Storage temperature Tstg Operating junction temperature Tj 120 rf (W) 100 handbook, P halfpage handbook, halfpage IC (A) 200 °C max. MGP613 MGP612 10 −65 to + 150 °C short-time operation during mismatch continuous r.f. operation derate by 0.58 W/K Tmb = 25 °C Th = 70 °C 80 60 continuous d.c. operation derate by 0.43 W/K 40 20 1 1 10 VCE (V) 0 102 0 50 100 Th (°C) 150 Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f ≥ 1 MHz. Fig.2 D.C. SOAR. THERMAL RESISTANCE (dissipation = 30 W; Tmb = 79 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 2,5 K/W From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 1,8 K/W From mounting base to heatsink Rth mb-h = 0,3 K/W March 1993 3 Philips Semiconductors Product specification HF/VHF power transistor BLW85 CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage V(BR) CES > 36 V V(BR) CEO > 16 V V(BR)EBO > 4 V ICES < 25 mA open base ESBO > 8 mJ RBE = 10 Ω ESBR > 8 mJ VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain(1) typ. IC = 4 A; VCE = 5 V hFE 50 10 to 80 D.C. current gain ratio of matched devices(1) hFE1/hFE2 < 1,2 VCEsat typ. 1,5 V 4 A; VCB = 12,5 V fT typ. 650 MHz −IE = 12,5 A; VCB = 12,5 V fT typ. 600 MHz Cc typ. 120 pF IC = 200 mA; VCE = 15 V Cre typ. 82 pF Collector-flange capacitance Ccf typ. 2 pF IC = 4 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 12,5 A; IB = 2,5 A Transition frequency at f = 100 −IE = MHz(1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. March 1993 4 Philips Semiconductors Product specification HF/VHF power transistor BLW85 MGP614 100 handbook, halfpage MGP615 300 handbook, halfpage typical values Tj = 25 °C hFE IE = Ie = 0 f = 1 MHz Cc (pF) 75 VCE = 12.5 V 200 5V typ 50 100 25 0 0 0 5 10 IC (A) 15 0 10 20 VCB (V) Fig.5 Tj = 25 °C. Fig.4 MGP616 750 handbook, full pagewidth fT (MHz) typical values f = 100 MHz Tj = 25 °C VCB = 12.5 V 10 V 500 5V 250 0 0 5 10 Fig.6 March 1993 5 15 −IE (A) 20 Philips Semiconductors Product specification HF/VHF power transistor BLW85 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C f (MHz) VCE (V) PL (W) PS (W) Gp (dB) IC (A) η (%) zi (Ω) ZL (Ω) 175 12,5 45 < 16 > 4,5 < 4,8 > 75 1,4 + j1,5 2,7 − j1,3 175 13,5 45 − typ. 6,0 − typ. 75 − − ,, ,, ,, handbook, full pagewidth L5 C3a C1 L1 C6a C7 L7 50 Ω L4 50 Ω C6b T.U.T. C2 C3b L2 C8 L6 C4 C5 R1 R2 L3 L8 +VCC MGP604 Fig.7 Test circuit; c.w. class-B. List of components: C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω (±10%) carbon resistor (0,25 W) R2 = 4,7 Ω (±5%) carbon resistor (0,25 W) Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8. March 1993 6 Philips Semiconductors Product specification HF/VHF power transistor BLW85 150 handbook, full pagewidth 72 1888MJK L3 L8 +VCC C4 R1 L2 C1 C2 C5 C3a L6 R2 C6a L5 L1 C7 L4 C8 L7 C6b C3b 1888MJK rivet MGP605 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed. March 1993 7 Philips Semiconductors Product specification HF/VHF power transistor BLW85 MGP617 MGP618 100 handbook, halfpage 10 100 Gp (dB) η (%) handbook, halfpage PL (W) 75 η Th = 25 °C 50 Gp 5 50 Th = 70 °C 25 0 0 Fig.9 10 20 PS (W) 10 60 handbook, halfpage PLnom (W) (VSWR = 1) VSWR = 4 5 20 50 PS PSnom 30 1.1 1.2 VCE VCEnom 1.3 Fig.11 R.F. SOAR; (short-time operation during mismatch); f = 175 MHz; Th = 70 °C; Rth mb-h = 0,3 K/W ; VCEnom = 12,5 V or 13,5 V; PS = PSnom at VCEnom and VSWR =1 measured in the circuit of Fig.7. March 1993 50 The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. 10 1 PL (W) The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. MGP619 40 30 Fig.10 Typical values; f = 175 MHz ;Th = 25 °C; VCE = 12,5 V; - - - VCE = 13,5 V. Typical values; f = 175 MHz; VCE = 12,5 V; - - - VCE = 13,5 V. 50 0 0 30 8 Philips Semiconductors Product specification HF/VHF power transistor BLW85 MGP620 2 handbook, halfpage MGP621 4 handbook, halfpage ri ri, xi (Ω) RL, XL (Ω) xi RL 0 2 −2 0 XL −4 0 100 f (MHz) −2 200 Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 °C MGP622 20 Gp (dB) 10 0 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 °C Fig.14 March 1993 f (MHz) 200 Fig.13 Load impedance (series components). handbook, halfpage 100 100 Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 °C Fig.12 Input impedance (series components). 0 0 9 Philips Semiconductors Product specification HF/VHF power transistor BLW85 R.F. performance in s.s.b. class-AB operation VCE = 12,5 V; Th up to 25 °C; Rth mb-h ≤ 0,3 K/W f1 = 28,000 MHz; f2 = 28,001 Mhz OUTPUT POWER W Gp dB ηdt % d3 dB(1) d5 dB(1) IC(ZS) mA 3 to 30 (P.E.P.) typ. 19,5 typ. 35 typ. −33 typ. −36 25 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. C10 handbook, full pagewidth L4 C1 L1 RS = RL = 50 Ω T.U.T. 50 Ω C11 C2 C3 L2 C4 +VB = 12.5 V R3 C6 R1 C13 L3 C14 C12 C5 C7 R5 C8 TR2 C9 C16 R2 R6 R4 C15 Fig.15 Test circuit; s.s.b. class-AB. March 1993 +VB = 12.5 V MGP623 bias TR1 L5 10 Philips Semiconductors Product specification HF/VHF power transistor BLW85 List of components: TR1 = TR2 = BD137 C1 = 100 pF air dielectric trimmer (single insulated rotor type) C2 = 27 pF ceramic capacitor (500 V) C3 = 180 pF polystyrene capacitor C4 = 100 pF air dielectric trimmer (single non-insulated rotor type) C5 = C7 = 3,9 nF polyester capacitor C6 = 2 × 270 pF polystyrene capacitors in parallel C8 = C15 = C16 = 100 nF polyester capacitor C9 = 2,2 µF moulded metallized polyester capacitor C10 = 2 × 385 pF (sections in parallel) film dielectric trimmer C11 = 68 pF ceramic capacitor (500 V) C12 = 2 × 82 pF ceramic capacitors in parallel (500 V) C13 = 47 pF ceramic capacitor (500 V) C14 = 385 pF film dielectric trimmer L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2 × 5 mm L2 = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640) L3 = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2 × 5 mm L4 = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2 × 5 mm R1 = 27 Ω (±5%) carbon resistor (0,5 W) R2 = 4,7 Ω (±5%) carbon resistor (0,25 W) R3 = 1,5 kΩ (±5%) carbon resistor (0,5 W) R4 = 10 Ω wirewound potentiometer (3 W) R5 = 47 Ω wirewound resistor (5,5 W) R6 = 150 Ω (±5%) carbon resistor (0,25 W) March 1993 11 Philips Semiconductors Product specification HF/VHF power transistor BLW85 MGP624 −20 MGP625 40 handbook, halfpage double-tone efficiency versus handbook, halfpage intermodulation distortion versus output power output power * ηdt (%) d3, d5 (dB) typ d3 −40 20 d5 −60 0 0 20 P.E.P. (W) 40 0 VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th = 25 °C; Rth mb-h ≤ 0,3 °K/W; IC(ZS) = 25 mA; typical values. 20 P.E.P. (W) 40 VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th = 25 °C; Rth mb-h ≤ 0,3 °K/W; IC(ZS) = 25 mA; typical values. Fig.16 Fig.17 MGP626 −20 handbook, halfpage intermodulation distortion versus output power * MGP627 40 handbook, halfpage double-tone efficiency versus d3, d5 output power (dB) ηdt (%) d3 typ −40 d5 −60 0 20 20 P.E.P. (W) 40 0 VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C; Rth mb-h ≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values. 0 P.E.P. (W) 40 VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C; Rth mb-h ≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values. * Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. Fig.18 March 1993 20 Fig.19 12 Philips Semiconductors Product specification HF/VHF power transistor BLW85 MGP628 30 MGP629 10 handbook, halfpage handbook, halfpage xi (Ω) ri (Ω) Gp (dB) ri 7.5 20 5 2.5 5 0 −2.5 2.5 xi 10 1 10 f (MHz) 0 102 1 Fig.20 Power gain as a function of frequency. 10 f (MHz) Fig.21 Input impedance (series components) as a function of frequency. Fig. 20 and 21 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Conditions: VCE = 12, 5 V VCE = 13, 5 V PL = 30 W (P.E.P.) PL = 35 W (P.E.P.) Th = 25 °C Th = 25 °C Rth mb-h ≤ 0,3 K/W Rth mb-h ≤ 0,3 K/W IC(ZS) = 25 mA IC(ZS) = 25 mA ZL = 1,8 Ω ZL = 1,8 Ω March 1993 −5 102 13 Philips Semiconductors Product specification HF/VHF power transistor BLW85 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A March 1993 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 14 Philips Semiconductors Product specification HF/VHF power transistor BLW85 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 15