INTEGRATED CIRCUITS DATA SHEET UAA2067G Image reject 1800 MHz transceiver for DECT applications Product specification Supersedes data of 1995 Sep 18 File under Integrated Circuits, IC17 1996 Oct 22 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G consists of a low-noise amplifier that drives a quadrature mixer pair. Image rejection is achieved by this RF mixer pair and the two phase shifters in the I and Q channels that phase shift the IF by 45° and 135° respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. FEATURES • Receiver with: – low noise amplifier – dual quadrature mixers for image rejection (lower sideband) Signals presented at the RF input at LO − IF frequency are rejected through this signal processing while signals at LO + IF frequency can form the IF signal. – I and Q combining networks at a fixed IF • Both high-frequency and low-frequency VCOs including buffers with good isolation for low pulling • Transmitter with: Its second advantage is to provide a good buffered high-frequency VCO signal to the RX and TX mixers and to the synthesizer-prescaler. Switching the receive or transmit section on gives a very small change in VCO frequency. – dual quadrature mixers for image rejection (lower sideband) – amplitude ramping circuit – amplifier with high output power. Its third advantage is to provide a good buffered low-frequency VCO signal to the TX mixers, to the synthesizer-prescaler and the second down conversion mixer in a double conversion receiver. Switching the transmit section on gives a very small change in VCO frequency. APPLICATIONS • 1800 MHz transceiver for DECT hand-portable equipment • TDMA systems. The frequency of each VCO is determined by a resonator network that is external to the IC. Each VCO has a regulated power supply voltage that has been designed specifically for minimizing a change in frequency due to changes in the power supply voltage, which may be caused for instance by switching on the power amplifier. GENERAL DESCRIPTION The UAA2067G is a low-power transceiver intended for use in portable and base station transceivers complying with the DECT system. The IC performs in accordance with specifications in the −30 to +85°C temperature range. Its fourth advantage is to provide typically 33 dBc of image rejection in the single-sideband up-conversion mixer. Thus the image filter between the power amplifier and the antenna is redundant and may consequently be removed. Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two phase shifters in the low-frequency VCO signal that shifts the phase to 0° and 90°. The output signals of the mixers are summed to form the single-upper-sideband output signal. The UAA2067G contains a front-end receiver for the 1800 to 1900 MHz frequency range, a high-frequency VCO for the 1650 to 1850 MHz range, a low-frequency VCO for the 100 to 140 MHz frequency range and a transmitter with a high-output power amplifier driver stage for the 1800 to 1900 MHz frequency range. Designed in an advanced BiCMOS process, it combines high performance with low-power consumption and a high degree of integration, thus reducing external component costs and total radio size. The output stage is a high-level output buffer with an output power of approximately 4 dBm. The output level is sufficient to drive a three-stage bipolar preamplifier for DECT. Its first advantage is to provide typically 34 dB of image rejection in the receiver path. Thus, the image filter between the LNA and the mixer is redundant and consequently can be removed. The receive section ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2067G 1996 Oct 22 LQFP32 DESCRIPTION plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm 2 VERSION SOT401-1 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G QUICK REFERENCE DATA For conditions see Chapters “DC characteristics” and “AC characteristics”. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC supply voltage 3.0 3.6 5.5 V ICC(RX) receive supply current − 24 − mA ICC(TX) transmit supply current − 42 − mA ICC(RFLO) RF oscillator supply current − 15 − mA ICC(IFLO) IF oscillator supply current − 7 − mA NFRX receive noise figure − − 7.0 dB GCP conversion power gain − 30 − dB IRRX receive image frequency rejection − 34 − dB fRFLO RFLO frequency range 1.65 − 1.85 GHz fIFLO IFLO frequency range 100 − 140 MHz Pout output transmit power − 4 − dBm IRTX transmit image frequency rejection − 33 − dBc Tamb operating ambient temperature −30 +25 +85 °C 1996 Oct 22 3 1996 Oct 22 4 TXB TXA GND4 VCC(RFLOO) RFLOO RFLOREG RFLOB RFLOA PDRFLO RAMP ∑ 11 14 UAA2067 IFLO OSCILLATOR 5 25 12 13 19 16 0o 90o PDTX TXRAMP 10 GND3 MGC867 8 ICEN GND1 IFLOO IFLOREG GND2 IFLORES PDIFLO VCC(IFLO) IFO Image reject 1800 MHz transceiver for DECT applications Fig.1 Block diagram. VCC(TX) 4 17 3 2 7 24 9 RFLO 21 OSCILLATOR 6 0o 90o 135o ∑ 26 30 45o IFDEC GND6 20 31 PDRX 1 LNA 27 CC(MIX) V 15 22 23 VCC2(RFLO) GND5 18 29 28 VCC1(RFLO) RXB RXA 32 GND7 Philips Semiconductors Product specification UAA2067G BLOCK DIAGRAM handbook, full pagewidth Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G PINNING SYMBOL PIN DESCRIPTION PDIFLO 1 power-down for IFLO IFLOREG 2 regulator decoupling for IFLO GND1 3 ground for IFLO; note 1 IFLOO 4 IFLO output VCC(IFLO) 5 supply voltage for IFLO IFLORES 6 IFLO resonator GND2 7 ground for IFLO resonator; note 1 ICEN 8 IC enable PDTX 9 power-down for transmitter TXRAMP 10 power ramping transmitter VCC(TX) 11 supply voltage for transmitter output stage; note 2 TXB 12 transmitter RF output B TXA 13 transmitter RF output A GND3 14 ground for transmitter output stage PDRFLO 15 power-down for RFLO VCC(RFLOO) 16 supply voltage for RFLO output RFLOO 17 RFLO output VCC1(RFLO) 18 supply voltage for RFLO oscillator; note 3 GND4 19 ground for RFLO oscillator; note 4 RFLOA 20 RFLO resonator RFLOB 21 RFLO resonator GND5 22 ground for RFLO oscillator; note 4 VCC2(RFLO) 23 supply voltage for RFLO oscillator; note 3 RFLOREG 24 regulator decoupling for RFLO IFO 25 receiver IF output IFDEC 26 IF decoupling VCC(MIX) 27 supply voltage for receive and transmit mixers; note 2 RXA 28 receiver RF input A RXB 29 receiver RF input B GND6 30 ground for receive and transmit mixers PDRX 31 power-down for receiver GND7 32 die-pad ground Notes 1. Pins 3 and 7 are internally short-circuited. 2. Pins 11 and 27 should be at the same DC voltage. 3. Pins 18 and 23 are internally short-circuited. 4. Pins 19 and 22 are internally short-circuited. 1996 Oct 22 5 Philips Semiconductors Product specification 25 IFO 26 IFDEC 27 V CC(MIX) 28 RXA UAA2067G 29 RXB 30 GND6 handbook, full pagewidth 31 PDRX 32 GND7 Image reject 1800 MHz transceiver for DECT applications PDIFLO 1 24 RFLOREG IFLOREG 2 23 V GND1 3 22 GND5 IFLOO 4 CC2(RFLO) 21 RFLOB UAA2067 18 V CC1(RFLO) ICEN 8 17 RFLOO Fig.2 Pin configuration. 1996 Oct 22 6 VCC(RFLOO) 16 7 PDRFLO 15 GND2 GND3 14 19 GND4 TXA 13 6 TXB 12 IFLORES VCC(TX) 11 20 RFLOA TXRAMP 10 5 PDTX 9 VCC(IFLO) MGC865 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G FUNCTIONAL DESCRIPTION Transmit section Receive section The circuit contains two balanced mixers, each of which is driven by the RFLO and IFLO signals. The output signal of the two mixers is summed and buffered to obtain the single upper-sideband signal at frequency RFLO + IFLO. The circuit contains a balanced low-noise amplifier followed by two high dynamic range mixers. The local oscillator signals, shifted in phase to 0 and 90° mix the amplified RF signal to the I and Q channels.These two channels are buffered, phase shifted by 45° and 135° respectively, amplified and recombined internally to realize the image rejection. Signals at the RF input at RFLO − IF frequencies are rejected through the signal processing while signals at the RFLO + IF frequencies form the IF signals. With the use of an off-chip time constant, the ramping circuit defines the power ramp-up and ramp-down of the pre-amplifier output signal. Balanced signals are used for minimizing crosstalk due to package parasitics. Fast switching, on/off, of the transmit section is controlled by the hardware input PDTX. An image rejection of typically 34 dB is obtained for an IF between 100 and 120 MHz. The power supply voltage of the transmit mixers, the adding circuit and ramping circuit is taken from the VCC(MIX) and GND6 for maximum isolation from the preamplifier output stage. Balanced signals are used for minimizing crosstalk due to package parasitics. The IF output is single-ended. The typical load is 50 Ω. Fast switching, on/off of the receive section is controlled by the hardware input PDRX. OPERATING MODES To use the IC, all VCC pins must be connected to the supply voltage. RFLO section For transceiving a DECT signal, the RFLO and IFLO sections should be powered-on. After a stable frequency has been reached (mainly determined by the synthesizer design), the receiver or transmitter can be powered-on. The high-frequency oscillator (RFLO oscillator) supplies the local oscillator signal for the down-conversion (receive) and up-conversion (transmit) mixers. This VCO uses an on-chip regulator for a power-supply voltage-independent output frequency. The buffered VCO signal is fed into a phase shifter and an off-chip prescaler-synthesizer. The output signal of the phase-shifter is used for driving the RX and TX mixers. Due to the good isolation in the buffer stages, a very small change in VCO frequency is obtained when switching the RX and TX mixers on. GMSK data modulation can be supplied in two different ways: the data is directly modulated on IFLO or RFLO. The ramping of the power level can be set with a time constant that is external to the IC. Table 1 gives the definition of the polarity of the switching signals on the receive, the RFLO, the IFLO and the transmit sections. Fast switching, on/off of the oscillator section is controlled by the hardware input PDRFLO. IFLO section The low-frequency oscillator (IFLO oscillator) internally supplies the local oscillator signal to the single-sideband transmit mixer. The buffered VCO signal is fed into a phase shifter. The output signal of the phase-shifter is used for driving the TX mixers. Due to the good isolation in the buffer stages, a very small change in VCO frequency is obtained when switching the TX mixer on. Fast switching on/off of the oscillator section is controlled by the hardware input PDIFLO input. 1996 Oct 22 7 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications Table 1 UAA2067G Switching signals on the receiver SIGNAL PDRX PDRFLO PDIFLO PDTX ICEN SECTION LEVEL on/off receive section powered-on LOW on(1) receive section powered-off HIGH off RFLO section powered-on LOW on(1) RFLO section powered-off HIGH off IFLO section powered-on LOW on(1) IFLO section powered-off HIGH off transmit section powered-on LOW on(1) transmit section powered-off HIGH off all sections disabled LOW off all sections enabled HIGH on Note 1. Active when ICEN is enabled. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 6 V − + 0.3 V maximum power input − +20 dBm Tj(max) maximum operating junction temperature − +150 °C Pdis(max) maximum power dissipation in stagnant air at 25°C − 500 mW Tstg storage temperature −65 +150 °C VCC supply voltage ∆GND difference in ground supply voltage applied between all grounds Pl(max) note 1 Note 1. Pins short-circuited internally must be short-circuited externally. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE UNIT 90 K/W HANDLING Every pin withstands the ESD test in accordance with “MIL-STD-883C class 2 (method 3015.5)”. 1996 Oct 22 8 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G DC CHARACTERISTICS VCC = 3.6 V; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins: VCC(MIX), VCC(TX), VCC(IFLO), VCC1(RFLO), VCC2(RFLO) and VCC(RFLOO) VCC supply voltage over full temperature range 3.0 3.6 5.5 V ICC(RX) supply current receive section on; DC tested 18 24 30 mA ICC(RFLO) supply current RFLO RFLO section on; DC tested 11 15 20 mA ICC(IFLO) supply current IFLO IFLO section on; DC tested 5 7 9 mA ICC(TX) supply current transmit section on; DC tested 34 42 54 mA ICC(PD) supply current power-down mode; DC tested − 2 50 µA Pins: PDRX, PDTX, PDRFLO, PDIFLO and ICEN VIH HIGH level input voltage 2.1 − VCC + 0.3 V VIL LOW level input voltage −0.3 − 0.8 V IIH HIGH level static input current pin at VCC − 0.4 V −1 − +1 µA IIL LOW level static input current pin at 0.4 V −1 − +1 µA receive section on 2.1 2.4 2.7 V Pins: RXA, RXB, IFO and IFDEC VRXA,B DC input voltage level VIFO DC output voltage level receive section on 0.9 1.1 1.3 V VIFDEC DC level receive section on 2.45 2.65 2.85 V Pins: RFLOA, RFLOB, RFLOREG and RFLOO IRFLOA,B DC current RFLO section on 1 2 3 mA VRFLOREG DC level RFLO section on 2.45 2.65 2.85 V VRFLOO DC output voltage level RFLO section on 2.8 3.1 3.4 V Pins: IFLORES, IFLOREG and IFLOO VIFLORES DC level IFLO section on 1.85 2.1 2.3 V VIFLOREG DC level IFLO section on 2.35 2.55 2.8 V VIFLOO DC output voltage level IFLO section on 2.2 2.45 2.7 V Pins: TXA, TXB and TXRAMP ITXA,B DC output current transmit section on 2 10 18 mA ITXRAMP DC input current VTXRAMP = 3 V; transmit section on − − 200 µA 1996 Oct 22 9 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G AC CHARACTERISTICS VCC = 3.0 to 5.5 V; Tamb = −30 to +85°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Receive mode (receive and RFLO sections powered-on) fRFI RF input frequency 1800 − 1900 MHz RiRF RF input resistance (real part of the parallel input impedance) balanced; at 1890 MHz − 190 − Ω CiRF RF input capacitance (imaginary part of the parallel input impedance) balanced; at 1890 MHz − 0.8 − pF PRFLORX RFLO level at input to RX balun note 1 − −70 −40 dBm DES3RX RF interference for 3 dB desensitization interference frequency offset 6 MHz; note 1 − −35 − dBm GCP conversion power gain RF input to IF output (typical load) over full temperature range 24 30 36 dB Tamb = 25 °C 27 30 33 dB CP1RX 1 dB input compression point referenced to RF input; note 1 −36 −33 − dBm Po(RX) IF power for CP1RX < Pin < +8 dBm referenced to IF power at CP1RX; note 1 −6 − +6 dB trec recovery time for Pin = +12 dBm note 1 − 2 30 µs IP2-2RX mixer 2-2 spurious intercept point referenced to the RF input; note 1 −6 +2 − dBm IP3RX 3rd order intercept point referenced to the RF input; note 1 −30 −25 − dBm NFRX overall noise figure RF input to IF output; note 1 − 5.8 7 dB fIF IF frequency range 100 110 120 MHz ZL(IF) typical application IF output load impedance fIF = 110 MHz − 50 − Ω IRRX image frequency rejection over full temperature range 20 34 − dB Tamb = 25 °C 23 34 − dB PSRR power supply rejection ratio note 1; typical load; at 110 MHz 35 − − dB 1996 Oct 22 10 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications SYMBOL PARAMETER UAA2067G CONDITIONS MIN. TYP. MAX. UNIT RF local oscillator (RFLO section powered-on) 1650 − 1850 MHz balanced; at 1.77 GHz − −250 − Ω oscillator input capacitance (imaginary part of the parallel input impedance) balanced; at 1.77 GHz − 2.7 − pF Vo(RFLO) local oscillator output level at pin 17; RMS value note 2; typical load resistance 50 75 − mV Zo(RFLO) local oscillator output impedance at pin 17 at 1.77 GHz − 30 − 60j − Ω RL(RFLO) typical load resistance − 300 − Ω HAR(RFLO) harmonic levels at RFLO output (pin 17) − − −20 dBc fRFLO(min) minimum oscillator frequency range Ri(RFLO) oscillator input resistance (real part of the parallel input impedance) Ci(RFLO) note 1 IF local oscillator (IFLO section powered-on) fIFLO(min) minimum oscillator frequency range 100 120 140 MHz Ri(IFLO) oscillator input resistance (real part of the parallel input impedance) − −480 − Ω Ci(IFLO) oscillator input capacitance (imaginary part of the parallel input impedance) − 2.1 − pF Vo(IFLO) IF local oscillator output level at pin 4; RMS value 100 160 − mV Zo(IFLO) local oscillator output impedance (real part) − − 100 Ω RL(IFLO) typical load resistance − 5 − kΩ CL(IFLO) typical load capacitance − 7 − pF HAR(IFLO) harmonic levels at IFLO output − − −15 dBc 1996 Oct 22 note 1 11 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications SYMBOL PARAMETER UAA2067G CONDITIONS MIN. TYP. MAX. UNIT Transmit mode (transmit, RFLO and IFLO sections powered-on) fTX RF output frequency 1800 − 1900 MHz Ro(TX) RF output resistance (real part of the parallel output impedance) balanced; note 1 − 110 − Ω Co(TX) RF output capacitance (imaginary part of the parallel output impedance) balanced; note 1 − 0.6 − pF FTRFLOTX RFLO feedthrough at the TX output referenced to the desired frequency; Tamb = 25 °C; note 1 − −25 −23 dBc Pout output transmit power VTXRAMP = 0 V; note 1 over full temperature range −2 4 8 dBm Tamb = 25 °C 1 4 7 dBm over full temperature range 20 33 − dBc Tamb = 25 °C IRTX image frequency rejection referenced to the desired frequency; note 1 23 33 − dBc ZinTXRAMP input impedance at pin TXRAMP 10 − − kΩ CinTXRAMP input capacitance at pin TXRAMP − − 10 pF VTXRAMP(max) ramp voltage for Pout = Pmax − 0 VTXRAMP(min) ramp voltage for Pout = Pmax − 30 dB − 3.0 − V CNRTX carrier-to-noise ratio at TX output Tamb = 25 °C; notes 1 and 3 +130 +133 − dBc/Hz tup start-up/power-down time of each block over full temperature range − 5 10 µs Ci input capacitance of logic inputs over full temperature range − − 5 pF V Timing Notes 1. Measured and guaranteed only on the Philips demonstration board, including PCB and balun. 2. The imaginary part of the load impedance has been tuned out. A power match is assumed. 3. A simplified DECT type approval measurement is used; the spectrum analyser has the following settings: RBW = 100 kHz, VBW = 100 Hz, use delta marker and add 50 dB (correction for RBW = 100 kHz), fRFLO = 1.77 GHz and fIFLO = 120 MHz, ∆f = 4.686 MHz. 1996 Oct 22 12 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G INTERNAL PIN CONFIGURATION PIN DC VOLTAGE (V) PDIFLO 1 − ICEN 8 − PDTX 9 − PDRFLO 15 − SYMBOL PDRX 31 − IFLOREG 2 2.55 RFLOREG 24 2.65 IFDEC 26 2.65 3, 7, 14, 19, 22, 30, 32 0 GND EQUIVALENT CIRCUIT VCC 1, 8, 9, 15, 31 GND MBH672 VCC 2, 24, 26 GND MBH673 VCC(IFLO) IFLOO 4 2.45 4 GND VCC 5, 11, 16, 18, 23, 27 MBH674 3.6 VIFLOREG 6 IFLORES 6 2.1 GND 1996 Oct 22 13 MBH675 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications SYMBOL PIN UAA2067G DC VOLTAGE (V) EQUIVALENT CIRCUIT VCC(TX) TXRAMP 10 − VCC(MIX) 10 GND MBH676 VCC(TX) TXB 12 VCC 12 TXA 13 13 VCC GND MBH677 VCC(RFLOO) 17 RFLOO 17 3.1 GND MBH678 VRFLOREG RFLOA 20 2.0 20 RFLOB 21 21 2.0 GND MBH679 1996 Oct 22 14 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications SYMBOL PIN UAA2067G DC VOLTAGE (V) EQUIVALENT CIRCUIT VCC(IFLO) IFO 25 1.1 25 GND MBH680 VCC(MIX) RXA 28 2.4 28 RXB 29 29 2.4 GND MBH681 1996 Oct 22 15 1996 Oct 22 16 5.6 nH 1/4 λ C21 10 pF 8.2 pF VCC 8.2 pF 1/4 λ C20 1 nF C23 8.2 pF C22 10 pF RFLO output C19 10 pF C7 1 nF VCC ICEN C9 4.7 pF R3 4.7 kΩ C10 10 pF PDRFLO C13 10 pF C11 10 pF PDTX tune C5 22 nF C6 10 pF VCC BBY 5103W L6 (0603) 1.5 nH C25 22 pF C24 4.7 nF R7 1 kΩ 1/4 λ 1/4 λ R8 BBY 5103W 1 kΩ L7 (0603) 1.5 nH C26 22 pF R6 33 Ω R5 33 Ω C2 1 nF C4 1 nF C31 1 nF C1 10 pF PDIFLO 8 7 6 5 4 3 2 1 32 9 31 10 30 11 29 12 UAA2067 28 13 27 14 26 15 25 16 17 18 19 20 21 22 23 24 L1 82 nH C8 150 pF R2 10 kΩ BB515 8.2 pF 6.8 nH 8.2 pF PDRX RFLO tune C29 10 pF C28 22 nF C32 4.7 nF MGC866 C27 10 pF 8.2 pF IF output C39 10 pF IFLO output C30 1 nF VCC C33 10 pF C34 1 nF 6.8 nH 0.82 pF 6.8 nH 0.82 pF Fig.3 Demonstration board diagram. VCC RF input Image reject 1800 MHz transceiver for DECT applications Figure 3 illustrates the electrical diagram of the UAA2067G Philips demonstration board for DECT applications. All matching is to 50 Ω for measurement purposes. Different values will be used in a real application. TX output 5.6 nH 12 nH 1 pF 1 pF 8.2 nF C14 1 nF VCC R4 4.7 kΩ TXRAMP BB515 handbook, full pagewidth mod Philips Semiconductors Product specification UAA2067G APPLICATION INFORMATION Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G Application-indicative values Measured on the Philips demonstration board, including PCB and balun at Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT RF local oscillator (RFLO section powered-on) CNRRFLO carrier-to-noise ratio PULLRFLO pulling due to enabling RX or TX SHIFTRFLO frequency shift due to 200 mV VCC change ∆f = 864 kHz − 117 − dBc/Hz ∆f = 2500 kHz − 128 − dBc/Hz ∆f = 4686 kHz − 134 − dBc/Hz VTXRAMP = 3 V − 5 − kHz − 5 − kHz IF local oscillator (IFLO section powered-on) CNRIFLO carrier-to-noise ratio ∆f = 4686 kHz − 140 − dBc/Hz SPURIFLO spurious signal modulation due to 0.5 mV (RMS value) on the power supply ∆f = 4686 kHz; measured at TX output − −60 − dBc PULLIFLO pulling due to enabling TX − 1 − kHz SHIFTIFLO frequency shift due to 200 mV VCC change − 2.5 − kHz Transmit mode (transmit, RFLO and IFLO sections powered-on) PSRRTX spurious signal modulation due to 0.5 mV (RMS value) on VCC(MIX), VCC(TX) and VCC(RFLO) only ∆f = 4686 kHz; note 1 − −74 − dBc SPURTX spurious signals RFLO − 3IFLO − −40 − dBc RFLO + 2IFLO − −35 − dBc RFLO + 5IFLO − −51 − dBc − 135 − dBc/Hz NTX white noise level at the output Note 1. Including PSRR of the RFLO circuitry. 1996 Oct 22 17 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G PACKAGE OUTLINE SOT401-1 LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm c y X A 17 24 ZE 16 25 e A A2 E HE (A 3) A1 w M pin 1 index θ bp 32 Lp 9 L 1 8 detail X ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y mm 1.60 0.15 0.05 1.5 1.3 0.25 0.27 0.17 0.18 0.12 5.1 4.9 5.1 4.9 0.5 7.15 6.85 7.15 6.85 1.0 0.75 0.45 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-12-19 97-08-04 SOT401-1 1996 Oct 22 EUROPEAN PROJECTION 18 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP32 (SOT401-1), LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1996 Oct 22 19 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 22 20 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G NOTES 1996 Oct 22 21 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G NOTES 1996 Oct 22 22 Philips Semiconductors Product specification Image reject 1800 MHz transceiver for DECT applications UAA2067G NOTES 1996 Oct 22 23 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 247 9145, Fax. +7 095 247 9144 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1996 SCA52 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 647021/1200/02/pp24 Date of release: 1996 Oct 22 Document order number: 9397 750 01437