DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities. PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 4 age 1 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 10 V IC DC collector current − − 100 mA Ptot total power dissipation up to Ts = 135 °C (note 1) − − 1 W hFE DC current gain IC = 50 mA; VCE = 5 V; Tj = 25 °C 40 90 − fT transition frequency IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 8 − GHz GUM maximum unilateral power gain IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C − 18 − dB IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C − 15 − dB dim = −60 dB; IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz − 700 − mV Vo output voltage LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − 20 V collector-emitter voltage open base − 10 V emitter-base voltage open collector − 2.5 V − 100 mA − 1 W −65 +150 °C − 175 °C VCBO collector-base voltage VCEO VEBO IC DC collector current Ptot total power dissipation Tstg storage temperature Tj junction temperature up to Ts = 135 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 12 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 40 K/W MAX. UNIT up to Ts = 135 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS − TYP. − ICBO collector cut-off current hFE DC current gain IC = 50 mA; VCE = 5 V 40 90 − Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 1.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 4 − pF Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.8 − pF fT transition frequency IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 8 − GHz GUM maximum unilateral power gain; note 1 IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C − 18 − dB IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C − 15 − dB note 2 − 750 − mV note 3 − 700 − mV note 4 − −55 − dB Vo d2 output voltage second order intermodulation distortion IE = 0; VCB = 5 V MIN. Note 100 nA s 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -----------------------------------------------------------dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; Vq = Vo −6 dB; fp = 445.25 MHz; Vr = Vo −6 dB; fq = 453.25 MHz; fr = 455.25 MHz measured at f(p+q−r) = 443.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. 1995 Sep 12 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 , VCC = 8 V handbook, full pagewidth C5 L4 L3 VBB C4 C3 L5 input 75 Ω C1 L1 L6 C6 R2 R1 L2 output 75 Ω DUT C2 R3 R4 MBB754 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO. C2 multilayer ceramic capacitor 1.2 pF 2222 851 12128 C1, C4, C6, C7 multilayer ceramic capacitor 10 nF 2222 590 08627 C3 multilayer ceramic capacitor 10 nF 2222 851 12128 C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103 C8 multilayer ceramic capacitor 1.5 pF 2222 851 12158 L1 (note 1) 1.5 turns 0.4 mm copper wire L2 microstripline 75 Ω length 22 mm; width 2.5 mm L3 (note 1) 0.4 mm copper wire ≈24 nH length 30 mm L4 (note 1) 0.4 mm copper wire ≈3.6 nH length 4 mm L5 microstripline 75 Ω length 19 mm; width 2.5 mm L6 Ferroxcube choke 5 µH 3122 108 20153 R1 metal film resistor 10 Ω 2322 180 73103 R2 (note 1) metal film resistor 220 Ω 2322 180 73221 R3, R4 metal film resistor 30 Ω 2322 180 73309 int. dia. 3 mm; winding pitch 1 mm Note 1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 x 35 µm; see Fig.2. 1995 Sep 12 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistor handbook, full pagewidth BFG198 VBB VCC C4 C6 R1 L6 R3 C2 75 Ω input L1 L4 L2 C1 C3 C7 75 Ω output L5 C8 R4 C5 R2 L3 MEA968 80 mm handbook, full pagewidth 60 mm MEA966 80 mm handbook, full pagewidth 60 mm mounting screws M 2.5 (8x) MEA967 Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board. 1995 Sep 12 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 MBB752 MBB267 1.2 160 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 0.8 120 0.6 0.4 80 0.2 40 0 0 50 100 150 200 ( o C) Ts 0 40 80 120 I C (mA) VCE = 5 V; Tj = 25 °C. Fig.5 DC current gain as a function of collector current. Fig.4 Power derating curve. MBB751 MBB499 10 1.2 handbook, halfpage handbook, halfpage fT (GHz) C re 8 (pF) 0.8 6 4 0.4 2 0 0 0 4 8 12 0 16 20 VCB (V) IE = 0; f = 1 MHz; Tj = 25 °C. Fig.6 1995 Sep 12 40 80 I C (mA) 120 VCE = 8 V; f = 1 GHz; Tamb = 25 °C. Feedback capacitance as a function of collector-base voltage. Fig.7 6 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 MBB753 40 MBB498 45 handbook, halfpage handbook, halfpage d im (dB) G UM (dB) 50 30 55 20 60 10 65 0 102 10 103 f (MHz) 70 20 104 40 60 80 100 120 I C (mA) VCE = 8 V; Vo = 750 mV; Tamb = 25 °C; f(p+q−r) = 443.25 MHz. IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Fig.9 Fig.8 Maximum gain as a function of frequency. Intermodulation distortion as a function of collector current. MBB266 MBB497 45 35 handbook, halfpage handbook, halfpage d im d2 (dB) (dB) 50 40 55 45 60 50 65 55 70 20 40 60 80 60 20 100 120 I C (mA) VCE = 8 V; Vo = 700 mV; Tamb = 25 °C; f(p+q) = 793.25 MHz. 60 80 100 120 I C (mA) VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C f(p+q) = 450 MHz. Fig.10 Intermodulation distortion as a function of collector current. 1995 Sep 12 40 Fig.11 Second order intermodulation distortion as a function of collector current. 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 MBB268 35 handbook, halfpage d2 (dB) 40 45 50 55 60 20 40 60 80 100 120 I C (mA) VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C f(p+q) = 810 MHz. Fig.12 Second order intermodulation distortion as a function of collector current. 1995 Sep 12 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 50 handbook, full pagewidth 25 100 2 GHz 10 250 +j 10 0 25 50 100 ∞ 250 –j 40 MHz 250 10 100 25 MBB494 50 IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω. Fig.13 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 40 MHz ϕ 180 o 100 80 60 40 20 0o 2 GHz ϕ 30 o 150 o 60 o 120 o 90 o MBB496 IC = 50 mA; VCE = 8 V; Tamb = 25 °C. Fig.14 Common emitter forward transmission coefficient (S21). 1995 Sep 12 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 90 o handbook, full pagewidth 2 GHz 60 o 120 o 150 o 30 o ϕ 0.2 0.16 180 o 0.12 0.08 0.04 0o 40 MHz ϕ 30 o 150 o 60 o 120 o 90 o MBB495 IC = 50 mA; VCE = 8 V; Tamb = 25 °C. Fig.15 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 2 GHz +j 0 10 25 50 100 250 ∞ –j 250 40 MHz 10 100 25 50 MBB493 IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω. Fig.16 Common emitter output reflection coefficient (S22). 1995 Sep 12 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 1 2 10 max 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.17 SOT223. 1995 Sep 12 7.3 6.7 o o 1.80 max 0.2 M A 11 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 12