TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 26 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 11 Pulse (Note 1) IDP 44 PD 1.9 W PD 1.0 W EAS 31 mJ IAR 11 A EAR 0.053 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.08 g (typ.) Note: For Notes 1 to 4, refer to the next page. Circuit Configuration 8 7 6 5 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 TPC8025 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8025 Part No. (or abbreviation code) Lot No. Note 6 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, IAR = 11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPC8025 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 VGS = 4.5 V, ID = 5.5 A ⎯ 10.5 14.5 VGS = 10 V, ID = 5.5 A ⎯ 7.5 9 VDS = 10 V, ID = 5.5 A 13 26 ⎯ ⎯ 1270 ⎯ ⎯ 240 ⎯ ⎯ 380 ⎯ ⎯ 12 ⎯ ⎯ 23 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton 4.7 Ω Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff ID = 5.5 A VOUT VGS 10 V 0V RL = 2.73 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 11 A V V mΩ S pF ns ⎯ 9 ⎯ ⎯ 35 ⎯ ⎯ 26 ⎯ ⎯ 3.8 ⎯ ⎯ 8 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 44 A ⎯ ⎯ −1.2 V VDSF IDR = 11 A, VGS = 0 V 3 2009-09-29 TPC8025 ID – VDS 4 3.5 ID – VDS 3.3 3.2 6 8 3.1 10 3.5 5 3.0 6 2.9 4 2.8 VGS = 2.7 V 2 0 0 4 3.3 5 ID 8 20 (A) 10 Drain current Drain current ID (A) 10 Common source Ta = 25°C Pulse test 0.2 0.4 0.6 0.8 Drain−source voltage VDS Common source Ta = 25°C Pulse test 6 16 8 3.2 12 3.1 8 3.0 2.9 4 2.8 VGS = 2.7 V 0 0 1 (V) 0.4 0.8 ID – VGS 2 (V) VDS – VGS Common source VDS = 10 V Pulse test VDS (V) 40 1.6 VDS 0.5 30 Drain−source voltage Drain current ID (A) 50 1.2 Drain-source voltage 20 100°C Ta = −55°C 10 25°C Common source Ta = 25°C Pulse test 0.4 0.3 0.2 ID = 11 A 0.1 5.5 2.8 0 0 1 2 3 4 Gate−source voltage 5 VGS 0 0 6 2 4 |Yfs| – ID 25 100 1 Common source VDS = 10 V Pulse test 1 Drain current 10 Drain−source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) Ta = −55°C 0.1 0.1 8 VGS 10 (V) RDS (ON) – ID 100 100 10 6 Gate−source voltage (V) 4.5 10 VGS = 10 V 1 0.1 100 ID (A) Common source Ta = 25°C Pulse test 1 Drain current 4 10 100 ID (A) 2009-09-29 TPC8025 RDS (ON) – Ta IDR – VDS 100 (A) Common source Pulse test 10 IDR 20 ID = 5.5,11 A 2.8 VGS = 4.5 V ID = 2.8,5.5,11 A 5 VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 1 Common source Ta = 25°C Pulse test −0.2 −0.4 Vth (V) Gate threshold voltage Capacitance C (pF) Ciss 1000 Coss Crss 100 10 Drain−source voltage VDS 1 0.5 Common source VDS = 10 V ID = 1mA Pulse test −40 (V) 50 Drain−source voltage 0 (2) 40 80 Ambient temperature 80 120 160 Ta (°C) 120 40 30 Ta (°C) VDD = 24 V 6 20 16 8 4 10 10 20 Total gate charge 5 20 12 12 VDS 0 0 160 Common source ID = 11 A Ta = 25°C Pulse test VGS (1) 0.5 0 40 Dynamic input/output characteristics 1.5 1 0 Ambient temperature VDS (V) (W) PD Drain power dissipation 2 (V) 1.5 0 −80 100 (1)Device mounted on a glass-epoxyboard (a)(Note 2a) (2)Device mounted on a glass-epoxyboard (b)(Note 2b) t = 10 s 2.5 VDS −1.2 2 PD – Ta 3 −1.0 2.5 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 −0.8 Vth – Ta Capacitance – VDS 10 0.1 −0.6 Drain−source voltage Ta (°C) 10000 VGS = 0 V 10 1 0 160 3 (V) 10 4.5 30 Qg Gate−source voltage 15 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) 25 0 40 (nC) 2009-09-29 TPC8025 rth − tw 1000 Transient thermal impedance rth (°C/W) (1)Device mounted on a glass-epoxy board (a)(Note 2a) (2)Device mounted on a glass-epoxy board (b)(Note 2b) (2) (1) 100 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 100 ID max (Pulse) * t = 10 ms * 10 Drain current ID (A) 1 ms * 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain−source voltage VDSS max 10 VDS 100 (V) 6 2009-09-29 TPC8025 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-09-29