TOSHIBA 2SJ508_09

2SJ508
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)
2SJ508
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 1.34 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −100 V)
z Enhancement mode
: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−100
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−100
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
−1
A
Pulse (Note 1)
IDP
−3
A
PD
0.5
W
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
136.5
mJ
Avalanche current
IAR
−1
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Drain power dissipation
Drain power dissipation
Note:
JEDEC
―
JEITA
―
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Note 1:
Note 2:
Note 3:
Note 4:
Symbol
Max
Unit
Rth (ch−a)
250
°C / W
Ensure that the channel temperature does not exceed 150°C.
Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A
Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
Z
Lot No.
Part No.
(or abbreviation code)
Note 5: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
E
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and
electronic equipment.
Note 5
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2SJ508
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cut−off current
IDSS
VDS = −100 V, VGS = 0 V
—
—
−100
μA
Drain−source breakdown
voltage
Gate threshold voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−100
—
—
V
Vth
VDS = −10 V, ID = −1 mA
−0.8
—
−2.0
V
VGS = −4 V, ID = −0.5 A
—
1.68
2.5
VGS = −10 V, ID = −0.5 A
—
1.34
1.9
VDS = −10 V, ID = −0.5 A
0.3
0.7
—
—
135
—
VDS = −10 V, VGS = 0 V, f = 1 MHz
—
22
—
Drain−source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
—
48
—
tr
—
20
—
ton
—
32
—
Rise time
Turn−on time
Switching time
Ω
S
pF
ns
Fall time
Turn−off time
tf
—
25
—
toff
—
130
—
—
6.3
—
—
4.1
—
—
2.2
—
Total gate charge (Gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“miller”) charge
Qgd
VDD ≈ −80 V, VGS = −10 V,
ID = −1 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
−1
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
−3
A
Forward voltage (diode)
VDSF
Reverse recovery time
trr
Reverse recovery charge
Qrr
IDR = −1 A, VGS = 0 V
—
—
1.5
V
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
90
—
ns
—
180
—
nC
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2SJ508
ID – VDS
−1.0
−10
ID – VDS
−2.0
−3.2
−0.8
−3
−1.6
−0.4
−1
−2.5
Common source
Ta = 25°C
Pulse test
VGS = −2.1V
0
−2.8
ID
−0.6
Drain current
−5
0
−5
(A)
(A)
ID
Drain current
−8
−6
−0.2
−4
−10
−8
−3.6
−4.5
−1.2
−3
−0.8
−2.5
−0.4
VGS = −2.1 V
−2
−3
Drain-source voltage
−4
VDS
0
−5
0
(V)
−2
−4
ID – VGS
(V)
VDS
25
Drain-source voltage
ID (A)
Drain current
Ta = −55°C
−1.2
−0.8
−0.4
−2
−4
−3
Gate-source voltage
−2.0
VGS
ID = −1 A
−1.5
−0.5
−1.0
−0.2
−0.5
0
0
−5
(V)
−4
−8
−12
Gate-source voltage
|Yfs| – ID
−16
VGS
−20
(V)
RDS (ON) – ID
10
10
Ta = −55°C
1
25
100
Common source
VDS = −10 V
Pulse test
−1
Drain-source ON resistance
RDS (ON) (Ω)
Forward transfer admittance
⎪Yfs⎪ (S)
(V)
Common source
Ta = 25°C
Pulse test
−2.5
0
0.1
−0. 1
VDS
−10
VDS – VGS
100
−1
−8
−3.0
Common source
VDS = −10 V
Pulse test
0
−6
Drain-source voltage
−2.0
−1.6
Common source
Ta = 25°C
Pulse test
VGS = −4 V
1
Common source
Ta = 25°C
Pulse test
0.1
−0.01
−10
Drain current ID (A)
−10
−0.1
−1
−10
Drain current ID (A)
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2SJ508
RDS (ON) − Ta
IDR − VDS
−10
Common source
Pulse test
ID = −0.5A
2.0
VGS = −4 V
−10V
1.0
0.5
−1
−5
−10
−0.1
−3
−1
0
−80
−40
0
40
80
120
−0.01
160
0
Ambient temperature Ta (°C)
VGS = 0 V
0.4
0.8
1000
Ciss
100
−2.0
Coss
−1.5
−1.0
Common source
VDS = −10 V
ID = −1mA
Pulse test
−0.5
Crss
−1
−10
Drain-source voltage
(V)
−2.5
Gate threshold voltage
Vth (V)
(pF)
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
1.6
VDS
Vth − Ta
Capacitance – VDS
10000
Capacitance C
1.2
Drain-source voltage
0
−80
−100
−40
VDS (V)
0
40
80
120
Ambient temperature Ta (°C)
PD − Ta
Dynamic input/output characteristics
−160
−16
2.0
Common source
ID = −1A
Ta = 25°C
Pulse test
VDS
1.5
Drain-source voltage
Drain power dissipation
PD (W)
Mounted on ceramic substrate
②Single
1.0
②
0.5
0
0
(V)
①25.4mm×25.4mm×0.8mm
①
40
80
120
160
160
−120
VDD = −80V
Ambient temperature Ta (°C)
VDS
−80
−20V
−8
−40V
VGS
−4
−40
0
200
−12
0
2
4
6
8
VGS (V)
1.5
Common source
Ta = 25°C
Pulse test
Gate-source voltage
2.5
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) ( Ω)
3.0
0
10
Total gate charge Qg (nC)
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2SJ508
rth − tw
Normalized transient thermal impedance
rth (℃/w)
1000
Single pulse
Single
15×15×0.8
100
20×20×0.8
Mounted on ceramic substrate
40×50×0.8mm
10
1
1m
10m
100m
1
Pulse width
10
tw
100
1000
(s)
SAFE OPERATING AREA
EAS – Tch
−10
200
1ms *
ID max (continuous)
Drain current ID
(A)
−1
Avalanche energy EAS (mJ)
ID max (pulsed) *
10 ms *
−0.1
DC operation
Ta = 25°C
150
100
50
−0.01
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0. 001
−0.1
−1
0
25
50
VDSS max
−10
Drain-source voltage
100
Channel temperature Tch
−100
VDS
75
125
150
(°C)
−1000
(V)
15 V
BVDSS
IAR
−15 V
VDD
TEST CIRCUIT
RG=25 Ω
VDD = −50 V, L = 168mH
5
VDS
WAVE FORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
⎝ VDSS VDD ⎠
2009-09-29
2SJ508
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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