Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) 2SC1567 VCBO 100 2SC1567A V 120 100 1 Collector-emitter voltage 2SC1567 (Base open) 2SC1567A VCEO Emitter-base voltage (Collector open) VEBO 5 Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3.05±0.1 3.8±0.3 1.9±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 V 120 V ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SC1567 Collector-emitter voltage (Base open) Conditions VCEO IC = 100 µA, IB = 0 VEBO IE = 1 µA, IC = 0 2SC1567A Emitter-base voltage (Collector open) Min Typ Max 100 Unit V 120 5 V VCE = 10 V, IC = 150 mA 130 hFE2 VCE = 5 V, IC = 500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V VCB = 10 V, IE = −50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 Forward current transfer ratio hFE1 Transition frequency * fT Collector output capacitance (Common base, input open circuited) Cob 330 100 MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 130 to 220 185 to 330 Publication date: February 2003 SJD00092BED 1 2SC1567, 2SC1567A IC VCE 1.2 1.0 IB=20mA Collector current IC (A) 0.8 0.4 0.8 6mA 4mA 0.6 0.4 2mA 0 0 40 80 120 160 –25˚C 0.01 10 6 8 10 0 12 5 100 1 000 1 TC=–25˚C 100˚C 25˚C 0.1 VCE=10V 103 TC=100˚C 25˚C 102 10 100 –25˚C 10 1 1 1 000 1 Cob VCB 160 120 80 40 −10 Emitter current IE (mA) −100 1 000 VCE=20V IE=0 f=1MHz TC=25˚C 104 40 30 20 10 0 100 ICEO Ta 105 50 ICEO (Ta) ICEO (Ta = 25°C) VCB=10V f=200MHz TC=25˚C Collector output capacitance C (pF) (Common base, input open circuited) ob fT I E 10 Collector current IC (mA) Collector current IC (mA) 200 15 hFE IC 104 10 0.01 10 Base current IB (mA) IC/IB=10 Collector current IC (mA) 0 −1 4 100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) TC=100˚C 25˚C 1 2 VBE(sat) IC 1 0.001 0.4 Collector-emitter voltage VCE (V) IC/IB=10 0.1 0.6 0 0 VCE(sat) IC 10 0.8 0.2 Ambient temperature Ta (°C) Transition frequency fT (MHz) 1.0 8mA 0.2 0 2 VCE=10V TC=25˚C Forward current transfer ratio hFE Collector power dissipation PC (W) Without heat sink 1.2 IC I B 1.2 18mA TC=25˚C 16mA 14mA 12mA 10mA Collector current IC (A) PC Ta 1.6 103 102 10 1 10 Collector-base voltage VCB (V) SJD00092BED 100 1 0 40 80 120 160 Ambient temperature Ta (°C) 200 2SC1567, 2SC1567A ICBO Ta Safe operation area 102 10 0 40 80 120 Ambient temperature Ta (°C) 160 Single pulse TC=25˚C ICP 1 IC t=10ms t=1s 0.1 0.01 0.001 1 10 100 2SC1567A Collector current IC (A) ICBO (Ta) ICBO (Ta = 25°C) 103 1 10 VCB=20V 2SC1567 104 1 000 Collector-emitter voltage VCE (V) SJD00092BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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