Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SA1535 base voltage 2SA1535A Collector to 2SA1535 Ratings –150 VCBO –180 –150 VCEO emitter voltage 2SA1535A –180 Unit –5 V –1.5 A Collector current IC –1 A PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 2SA1535 Collector to emitter 2SA1535 voltage 2SA1535A 16.7±0.3 4.2±0.2 7.5±0.2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C Conditions min typ VCB = –150V, IE = 0 IC = –1mA, IB = 0 –150 IC = –100µA, IB = 0 –180 IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 90 160 hFE2 VCE = –5V, IC = –500mA 50 100 VCEO VEBO Forward current transfer ratio 2 (TC=25˚C) ICBO Emitter to base voltage 5.08±0.5 W 2.0 Symbol Collector cutoff current 1.3±0.2 0.5 +0.2 –0.1 V ICP Ta=25°C 0.8±0.1 1 VEBO dissipation 1.4±0.1 V Peak collector current 15 φ3.1±0.1 2.54±0.25 Emitter to base voltage Collector power TC=25°C 2.7±0.2 4.0 ● 14.0±0.5 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 max Unit –10 µA V V 220 Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.5 –2.0 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA –1.0 –2.0 V Transition frequency fT VCE = –10V, IC = –50mA, f = 10MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 30 *h FE1 MHz 50 pF Rank classification Rank Q R hFE1 90 to 155 130 to 220 1 Power Transistors 2SA1535, 2SA1535A VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) Without heat sink 28 24 20 –3 IC/IB=10 –1 – 0.3 16 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) PC — Ta 32 TC=100˚C 25˚C 8 –25˚C 0 0 20 40 60 80 100 120 140 160 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 – 0.01 – 0.01 – 0.03 Collector current IC (A) hFE — IC fT — IE 100˚C 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) Area of safe operation (ASO) –10 –1 Single pulse TC=25˚C ICP t=1ms IC DC – 0.3 t=<50µs Collector current IC (A) –3 10ms – 0.1 – 0.03 – 0.003 – 0.001 –1 –3 –10 –30 2SA1535A 2SA1535 – 0.01 –100 –300 –1000 Collector to emitter voltage VCE (V) 2 VCB=–10V f=10MHz TC=25˚C 300 200 100 0 0.01 –1 –3 Cob — VCB Collector output capacitance Cob (pF) Transition frequency fT (MHz) Forward current transfer ratio hFE TC=–25˚C 100 – 0.3 100 VCE=–10V 25˚C – 0.1 Collector current IC (A) 400 300 100˚C 25˚C – 0.03 Ambient temperature Ta (˚C) 1000 TC=–25˚C –1 – 0.1 – 0.03 4 –3 – 0.3 – 0.1 12 IC/IB=10 –10 0.03 0.1 0.3 Emitter current IE (A) 1 IE=0 f=1MHz TC=25˚C 80 60 40 20 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V)