Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V VCER 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 3.5 V Peak collector current ICP 300 mA Collector current IC 150 mA Collector power TC=25°C dissipation Ta=25°C 8 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 16.7±0.3 2.7±0.2 φ3.1±0.1 4.0 ● Small transition frequency fT Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 1.4±0.1 Solder Dip ■ Features ● 10.0±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2.0 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ Unit 10 µA ICEO Collector to base voltage VCBO IC = 100µA, IE = 0 110 V VCER IC = 500µA, RBE = 470Ω 100 V Collector to emitter voltage VCE = 35V, IB = 0 max Collector cutoff current VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 3.5 V Forward current transfer ratio hFE VCE = 5V, IC = 100mA 20 Collector to emitter saturation voltage VCE(sat) IC = 150mA, IB = 15mA fT1 VCE = 10V, IC = 10mA, f = 10MHz 300 MHz fT2 VCE = 10V, IC = 110mA, f = 10MHz 350 MHz Cob VCB = 30V, IE = 0, f = 1MHz 3.5 pF Transition frequency Collector output capacitance 0.5 V 1 Power Transistors 2SC3943 PC — Ta IC — VCE 12 IC — VBE 240 120 TC=25˚C 200 8 6 4 2 IB=5.0mA 4.5mA 4.0mA 160 3.5mA 3.0mA 120 2.5mA 2.0mA 80 1.5mA 1.0mA 40 40 80 120 160 200 25˚C –25˚C 80 60 40 20 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 0.3 25˚C 3000 TC=100˚C –25˚C 0.03 0.01 1 3 10 30 100 300 25˚C 100 TC=100˚C 30 –25˚C 10 Collector current IC (mA) 1 3 10 30 100 1000 3 2 Single pulse Ta=25˚C ICP 300 Collector current IC (A) 4 t=10ms 100 IC 100ms DC 30 10 3 1 1 0.3 0 0.1 1 3 10 30 100 Collector to base voltage VCB (V) 500 400 300 200 100 1 3 10 30 100 300 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 5 0.3 Collector current IC (mA) Cob — VCB 6 1.0 3 1 0.1 300 0.8 VCB=10V f=10MHz TC=25˚C VCE=5V 1000 1 0.6 fT — IE Transition frequency fT (MHz) 3 0.4 600 IC/IB=10 10 0.1 0.2 Base to emitter voltage VBE (V) 10000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 100 0 0 Collector output capacitance Cob (pF) TC=100˚C 0.5mA 0 2 VCE=5V Collector current IC (mA) 10 Collector current IC (mA) Collector power dissipation PC (W) TC=Ta 1000 Collector to emitter voltage VCE (V)