PHILIPS BLF177

BLF177
HF/VHF power MOS transistor
Rev. 06 — 24 January 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES
BLF177
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
andbook, halfpage 4
• Good thermal stability
3
• Withstands full load mismatch.
d
APPLICATIONS
• Designed for industrial and military
applications in the HF/VHF
frequency range.
g
MBB072
1
DESCRIPTION
s
2
MLA876
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
Fig.1 Simplified outline (SOT121B) and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PINNING
Product and environmental safety - toxic materials
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
SSB class-AB
CW class-B
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
d5
(dB)
28
50
150 (PEP)
>20
>35
<−30
<−30
108
50
150
typ. 19
typ. 70
−
−
Rev. 06 - 24 January 2007
2 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
125
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
Ptot
total power dissipation
Tstg
Tj
−
16
A
−
220
W
storage temperature
−65
+150
°C
junction temperature
−
200
°C
Tmb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
max. 0.8
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
max. 0.2
K/W
MRA906
102
handbook, halfpage
MGP089
300
handbook, halfpage
ID
(A)
Ptot
(W)
10
(1)
200
(2)
(1)
(2)
1
10−1
100
1
10
102
VDS (V)
(1) Current in this area may be limited by RDSon.
(2) Tmb = 25 °C.
103
0
0
50
100
Th (°C)
150
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
Rev. 06 - 24 January 2007
3 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 100 mA; VGS = 0
125
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 50 V
−
−
2.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 50 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
matched pairs
ID = 50 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 5 A; VDS = 10 V
4.5
6.2
−
S
RDSon
drain-source on-state resistance
ID = 5 A; VGS = 10 V
−
0.2
0.3
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
25
−
A
Cis
input capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
−
480
−
pF
Cos
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
−
190
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
−
14
−
pF
VGS group indication
LIMITS
(V)
GROUP
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
MAX.
A
2.0
2.1
B
2.1
2.2
O
3.3
3.4
P
3.4
3.5
C
2.2
2.3
Q
3.5
3.6
D
E
2.3
2.4
R
3.6
3.7
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
M
3.1
3.2
Z
4.4
4.5
N
3.2
3.3
Rev. 06 - 24 January 2007
4 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP090
0
MGP091
30
handbook, halfpage
handbook, halfpage
T.C.
ID
(A)
(mV/K)
−1
20
−2
−3
10
−4
−5
10−2
0
10−1
1
ID (A)
0
10
5
10
VGS (V)
15
VDS = 10 V; valid for Th = 25 to 70 °C.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
MGP092
400
handbook, halfpage
Fig.5
Drain current as a function of gate-source
voltage; typical values.
MBK408
1200
handbook, halfpage
RDSon
C
(pF)
(mΩ)
300
800
Cis
200
400
Cos
100
0
0
50
100
Tj (°C)
150
0
20
40
VDS (V)
60
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7
Rev. 06 - 24 January 2007
Input and output capacitance as functions
of drain-source voltage; typical values.
5 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP093
300
handbook, halfpage
Crs
(pF)
200
100
0
0
10
20
30
40
50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
Th = 25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise specified.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
SSB, class-AB
28
50
0.7
20 to 150
(PEP)
>20
typ. 35
>35
typ. 40
<−30
typ. −35
<−30
typ. −38
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; VDS = 50 V at rated output power.
Rev. 06 - 24 January 2007
6 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
MGP096
30
BLF177
MGP094
60
handbook, halfpage
handbook, halfpage
Gp
(dB)
ηD
(%)
20
40
10
20
0
0
0
100
PL (W) PEP
200
0
100
200
PL (W) PEP
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9
Fig.10 Two tone efficiency as a function of load
power; typical values.
Power gain as a function of load power;
typical values.
MGP097
−20
MGP098
−20
handbook, halfpage
handbook, halfpage
d3
(dB)
d5
(dB)
−30
−30
−40
−40
−50
−50
−60
−60
0
100
PL (W) PEP
0
200
100
PL (W) PEP
200
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
Rev. 06 - 24 January 2007
7 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, full pagewidth
C9
C1
D.U.T.
C3
C12
L6
C10 C11
C2
C4
C14
L2
L1
input
50 Ω
L3
R1
R2
output
50 Ω
C15
L4
C13
C5
C6
R5
C7
R3
R4
L5
C8
+VG
+VD
MGP095
Fig.13 Test circuit for class-AB operation.
Rev. 06 - 24 January 2007
8 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
List of components class-AB test circuit (see Fig.13)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C4, C13, C14
film dielectric trimmer
7 to 100 pF
2222 809 07015
C2
multilayer ceramic chip capacitor
(note 1)
56 pF
C3, C11
multilayer ceramic chip capacitor
(note 1)
62 pF
C5, C6
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C7
multilayer ceramic chip capacitor
3 × 100 nF
2222 852 47104
C8
electrolytic capacitor
2.2 µF, 63 V
C9, C10
multilayer ceramic chip capacitor
(note 1)
20 pF
C12
multilayer ceramic chip capacitor
(note 1)
100 pF
C15
multilayer ceramic chip capacitor
(note 1)
150 pF
L1
5 turns enamelled 0.7 mm copper
wire
133 nH
length 4.5 mm; int.
dia. 6 mm; leads
2 × 5 mm
L2, L3
stripline (note 2)
41.1 Ω
length 13 × 6 mm
L4
7 turns enamelled 1.5 mm copper
wire
236 nH
length 12.5 mm;
int. dia. 8 mm;
leads 2 × 5 mm
L5
grade 3B Ferroxcube wideband HF
choke
L6
5 turns enamelled 2 mm copper wire 170 nH
R1, R2
metal film resistor
10 Ω, 1 W
R2
metal film resistor
10 kΩ, 0.4 W
R3
metal film resistor
1 MΩ, 0.4 W
R5
metal film resistor
10 kΩ, 1 W
4312 020 36642
length 11.5 mm;
int. dia. 8 mm;
leads 2 × 5 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm (Rogers 5880).
Rev. 06 - 24 January 2007
9 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP099
10
MGP100
30
handbook, halfpage
handbook, halfpage
Zi
(Ω)
Gp
(dB)
ri
5
20
0
10
xi
−5
0
0
10
20
f (MHz)
30
0
10
20
f (MHz)
30
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω.
Fig.14 Input impedance as a function of frequency
(series components); typical values.
Fig.15 Power gain as a function of frequency;
typical values.
APPLICATION INFORMATION FOR CLASS-B OPERATION
RF performance in CW operation in a common source class-B test circuit (see Fig.19).
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ω unless otherwise specified.
MODE OF
OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
108
50
0.1
150
typ. 19
typ. 70
Rev. 06 - 24 January 2007
10 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP101
30
MGP102
100
handbook, halfpage
handbook, halfpage
Gp
(dB)
ηD
(%)
20
50
10
0
0
100
200
PL (W)
0
0
100
PL (W)
200
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
Fig.16 Power gain as a function of load power;
typical values.
Fig.17 Two tone efficiency as a function of load
power; typical values.
MGP103
200
handbook, halfpage
PL
(W)
100
0
0
1
2
3
PIN (W)
4
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
Fig.18 Load power as a function of input power;
typical values.
Rev. 06 - 24 January 2007
11 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
C17
handbook, full pagewidth
C1
C3
C2
L4
C13
L8
C15
C14
C16
L7
L3
L2
L1
input
50 Ω
D.U.T.
BLF177
C4
C18
output
50 Ω
L5
C5
R1
C9
R2
C11
C6
C10
R6
C12
C7
L6
R3
+VD
C8
R5
R4
C19
MGP104
Fig.19 Test circuit for class-B operation at 108 MHz.
Rev. 06 - 24 January 2007
12 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
List of components class-B test circuit (see Fig.19)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C16, C18
film dielectric trimmer
2.5 to 20 pF
2222 809 07004
C3
multilayer ceramic chip capacitor
(note 1)
20 pF
C4, C5
multilayer ceramic chip capacitor
(note 1)
62 pF
C6, C7, C9, C10
multilayer ceramic chip capacitor
(note 1)
1 nF
C8
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C11
multilayer ceramic chip capacitor
10 nF
2222 852 47103
C12
multilayer ceramic chip capacitor
3 × 100 nF
2222 852 47104
C13, C14
multilayer ceramic chip capacitor
(note 1)
36 pF
C15
multilayer ceramic chip capacitor
(note 1)
12 pF
C17
multilayer ceramic chip capacitor
(note 1)
5.6 pF
C19
electrolytic capacitor
4.4 µF, 63 V
L1
3 turns enamelled 0.8 mm copper
wire
22 nH
length 5.5 mm;
int. dia. 3 mm;
leads 2 × 5 mm
L2
stripline (note 2)
64.7 Ω
31 × 3 mm
L3, L4
stripline (note 2)
41.1 Ω
10 × 6 mm
L5
6 turns enamelled 1.6 mm copper
wire
122 nH
length 13.8 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L6
grade 3B Ferroxcube wideband HF
choke
L7
1 turn enamelled 1.6 mm copper
wire
16.5 nH
int. dia. 9 mm;
leads 2 × 5 mm
L8
2 turns enamelled 1.6 mm copper
wire
34.4 nH
length 3.9 mm;
int. dia. 6 mm;
leads 2 × 5 mm
R1, R2
metal film resistor
31.6 Ω, 1 W
2222 030 28478
4312 020 36642
R3
metal film resistor
1 kΩ, 0.4 W
R4
cermet potentiometer
5 kΩ
R5
metal film resistor
44.2 kΩ, 0.4 W
R6
metal film resistor
10 Ω, 1 W
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm (Rogers 5880).
Rev. 06 - 24 January 2007
13 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
174
handbook, full pagewidth
strap
strap
rivet
70
strap
R4
R5
C19
L6
R3
C6
C7
R1
C4
C3
R6
C11
C10
C8
C9
+VD
C12
L5
R2
C13
C15
L2
L1
C1
C5
L3
L4
L7
C14
L8
C17
C16
C2
C18
MGP105
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a
direct contact between upper and lower sheets.
Fig.20 Component layout for 108 MHz class-B test circuit.
Rev. 06 - 24 January 2007
14 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP107
4
MGP108
10
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
2
8
ri
RL
0
6
xi
XL
−2
4
−4
2
−6
0
100
0
f (MHz)
200
0
100
f (MHz)
200
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Fig.21 Input impedance as a function of frequency
(series components); typical values.
Fig.22 Load impedance as a function of frequency
(series components); typical values.
MGP109
30
handbook, halfpage
Gp
(dB)
20
handbook, halfpage
10
Zi
ZL
MBA379
0
0
100
f (MHz)
200
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Fig.23 Definition of transistor impedance.
Fig.24 Power gain as a function of frequency;
typical values.
Rev. 06 - 24 January 2007
15 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
BLF177 scattering parameters
VDS = 50 V; ID = 100 mA; note 1.
s11
f (MHz)
s21
s12
s22
|s11|
∠Φ
|s21|
∠Φ
|s12|
∠Φ
|s22|
∠Φ
5
0.86
−110.20
36.90
114.20
0.02
25.20
0.64
−84.90
10
0.83
−139.40
20.39
93.30
0.02
5.10
0.55
−112.00
20
0.85
−155.70
9.82
72.60
0.02
−13.40
0.60
−129.30
30
0.88
−161.50
5.96
59.30
0.02
−24.70
0.69
−138.00
40
0.90
−164.90
3.98
49.30
0.02
−31.70
0.76
−144.30
50
0.92
−167.10
2.83
41.90
0.01
−35.80
0.82
−149.30
60
0.94
−169.00
2.11
36.00
0.01
−36.80
0.86
−153.50
70
0.96
−170.70
1.63
31.20
0.01
−33.70
0.89
−157.00
80
0.96
−172.20
1.29
27.40
0.00
−23.00
0.91
−159.90
90
0.97
−173.40
1.04
24.20
0.00
3.30
0.92
−162.40
100
0.97
−174.30
0.86
21.70
0.00
42.50
0.94
−164.50
125
0.99
−176.50
0.57
16.40
0.01
81.60
0.95
−168.80
150
0.99
−178.10
0.40
13.40
0.01
88.70
0.97
−171.90
175
0.99
−179.80
0.30
11.60
0.02
90.70
0.98
−174.50
200
1.00
179.20
0.23
11.00
0.02
90.80
0.98
−176.70
250
1.00
177.00
0.15
11.70
0.03
90.50
0.99
179.80
300
1.00
175.10
0.11
16.70
0.03
89.60
0.99
176.90
350
0.99
173.30
0.08
24.10
0.04
88.30
0.99
174.30
400
1.00
171.80
0.07
33.10
0.05
88.00
0.99
171.90
450
0.99
170.10
0.07
42.70
0.05
87.80
0.99
169.60
500
0.99
168.50
0.07
51.90
0.06
86.50
0.99
167.40
600
0.99
165.40
0.07
64.20
0.07
84.90
0.99
163.10
700
0.99
162.30
0.09
70.60
0.09
83.10
0.98
158.90
800
0.99
158.90
0.10
73.80
0.10
82.20
0.98
154.80
900
0.99
155.30
0.12
74.90
0.12
80.70
0.97
150.60
1000
0.98
151.80
0.14
76.40
0.14
79.80
0.97
146.20
Note
1. For more extensive s-parameters see internet website:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast
Rev. 06 - 24 January 2007
16 of 19
NXP Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
D1
q
C
B
U1
c
H
b
4
α
w2 M C M
3
A
U3
U2
p
w1 M A M B M
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
mm
7.27
6.17
5.82
5.56
inches
0.286
0.243
0.229 0.006
0.219 0.004
UNIT
OUTLINE
VERSION
0.16
0.10
F
H
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.25
0.51
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
0.130
0.120
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.01
0.02
D
D1
12.86 12.83
12.59 12.57
45°
REFERENCES
IEC
JEDEC
α
EIAJ
SOT121B
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
Rev. 06 - 24 January 2007
17 of 19
BLF177
NXP Semiconductors
HF/VHF power MOS transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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authorized or warranted to be suitable for use in medical, military, aircraft,
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malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 06 - 24 January 2007
18 of 19
BLF177
NXP Semiconductors
HF/VHF power MOS transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF177_N_6
20070124
Product data sheet
-
BLF177_5
Modifications:
•
•
•
•
correction made to figure title of Fig.13
correction made to note 2 on page 9
correction made to note 2 on page 13
correction made to figure note of Fig.20
BLF177_5
(9397 750 14416)
20041217
Product specification
-
BLF177_4
BLF177_4
(9397 750 11579)
20030721
Product specification
-
BLF177_3
BLF177_3
(9397 750 04059)
19980702
Product specification
-
BLF177_CNV_2
BLF177_CNV_2
(9397 750 xxxxx)
19971216
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 January 2007
Document identifier: BLF177_N_6
Rev. 06 - 24 January 2007
19 of 19