BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS(ON) ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • Backlighting DC-DC Converters Power management functions • • SOT23 Drain D Gate Top View S G Source Top View Equivalent Circuit Ordering Information (Note 3) Part Number BSN20-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com Marking Information N20 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 BSN20 Document number: DS31898 Rev. 6 - 2 Mar 3 N20 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YW NEW PRODUCT 50V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D July 2011 © Diodes Incorporated BSN20 Maximum Ratings Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Steady State @ TSP = 25°C (Note 4) Pulsed Drain Current @ TSP = 25°C (Notes 4 & 5) Symbol VDSS VGSS Units V V IDM Value 50 ±20 500 300 1.2 Symbol PD RθJA PD RθJSP TJ, TSTG Value 600 200 920 136 -55 to +150 Units mW °C/W mW °C/W °C TA = 25°C TA = 100°C ID mA A NEW PRODUCT Thermal Characteristics Characteristic Power Dissipation, @TA = 25°C (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation, @TSP = 25°C (Note 4) Thermal Resistance, @TSP = 25°C (Note 4) Operating and Storage Temperature Range . Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 50 - - 0.5 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.4 RDS (ON) - |Yfs| VSD IS ISM 40 - 1.5 1.8 2.0 1.5 194 1.2 V Static Drain-Source On-Resistance 1.0 1.3 1.6 320 1.0 - mS V mA A VDS = VGS, ID = 250μA VGS = 10V, ID = 0.22A VGS = 4.5V, ID = 0.1A VDS = 10V, ID = 0.1A VGS = 0V, IS = 180mA TSP = 25°C TSP = 25°C (Notes 3 & 4) Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 21.8 5.6 3.3 49 800 100 100 2.93 2.99 9.45 8.3 40 15 10 - pF pF pF Ω pC pC pC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage Source (diode forward) Current Peak Source (diode forward) Current DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 10V, VDD = 25V, ID = 250mA VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. BSN20 Document number: DS31898 Rev. 6 - 2 2 of 6 www.diodes.com July 2011 © Diodes Incorporated PD, POWER DISSIPATION (%) 100 80 60 40 20 0 25 50 75 100 125 150 175 TS, SOLDER POINT TEMPERATURE (°C) Fig 1. Normalized Total Power Dissipation as a Function of Solder Point Temperature 120 100 80 60 40 20 0 0 50 75 100 125 150 175 25 TS, SOLDER POINT TEMPERATURE (°C) Fig 2. Normalized Continuous Current vs. Solder Point Temperature 1 Rds(on) Limited PW = DC ID, DRAIN CURRENT (A) PW = 10s 0.1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 PW = 100µs PW = 10µs TJ(MAX) = 150°C TA = 25°C Single Pulse 0.001 0.1 1 10 VDS, DRAIN-SOURE VOLTAGE (V) 100 Fig. 3 SOA, Safe Operation Area Zth(j-sp), TRANSIENT THERMAL RESISTANCE (°C/W) NEW PRODUCT 120 IDER, NORMALIZED CONTINUOUS CURRENT (%) BSN20 1,000 100 D = 0.5 D = 0.3 D = 0.1 10 D = 0.05 D = 0.02 Duty Cycle, D = t1/t2 D = Single Pulse 1 0.00001 BSN20 Document number: DS31898 Rev. 6 - 2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (s) Fig. 4 Transient Thermal Response 3 of 6 www.diodes.com 1 10 July 2011 © Diodes Incorporated BSN20 0.8 0.5 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 0.7 0.6 VGS = 10V VGS = 4.5V 0.4 VGS = 4.0V VGS = 3.0V 0.3 0.2 0.1 0.5 0.4 0.3 0.2 25° C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Drain-Source Current vs. Drain-Source Voltage 9 8 7 6 5 4 3 VGS = 3.5V 2 1 VGS = 4.0V VGS = 4.5V 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 150 ° C 0.1 0 0 VDS = 5V 0.6 0 VGS = 10V 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0.1 4 2.0 VGS = 10V ID = 500mA 1.5 VGS = 4.5V ID = 200mA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 Drain-Source On-Resistance vs. Junction Temperature 0.5 ID, DRAIN-SOURCE CURRENT (A) 2.0 1.6 ID = 1.0mA 1.2 0.8 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Transfer Characteristics 2.5 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 0.7 ID = 250µA 0.4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 9 Gate Threshold Voltage vs. Junction Temperature Document number: DS31898 Rev. 6 - 2 0.3 0.2 150° C 0.1 125 ° C 85° C 25° C -55 ° C 0 -50 BSN20 0.4 4 of 6 www.diodes.com 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics 4 July 2011 © Diodes Incorporated 40 0.7 35 0.6 30 25° C C, CAPACITANCE (pF) gfs, FORWARD TRANSCONDUCTANCE (s) 0.8 0.5 150° C 0.4 0.3 0.2 0.1 25 20 Ciss 15 10 Coss 5 Crss 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN-CURRENT (A) Fig. 11 Typical Transfer Characteristic 0.8 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Capacitance vs. Drain-Source Voltage 1.0 0.9 IS, SOURCE CURRENT (A) NEW PRODUCT BSN20 0.8 0.7 0.6 150° C 0.5 0.4 25° C 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, DIODE FORWARD VOLTAGE (V) Fig. 13 Source Current vs. Diode Forward Voltage Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F G BSN20 Document number: DS31898 Rev. 6 - 2 L 5 of 6 www.diodes.com July 2011 © Diodes Incorporated BSN20 Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com BSN20 Document number: DS31898 Rev. 6 - 2 6 of 6 www.diodes.com July 2011 © Diodes Incorporated